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    MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    磁记忆体装置及其制造方法

    公开(公告)号：US20170062705A1

    公开(公告)日：2017-03-02

    申请号：US15065819

    申请日：2016-03-09

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Koji YAMAKAWA ,  Katsuaki NATORI ,  Shinichi KANOO ,  Kenji NOMA

    IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

    Abstract: According to one embodiment, a magnetic memory device includes: a first magnetic layer; a nonmagnetic layer on the first magnetic layer; a second magnetic layer on the nonmagnetic layer; and an insulator film on the nonmagnetic layer surrounding a side surface of the second magnetic layer. The second magnetic layer has an area of a surface facing the nonmagnetic layer smaller than that of the nonmagnetic layer. The nonmagnetic layer includes a first region that is provided between the first magnetic layer and the insulator film. The first region includes an amorphous state.

    Abstract translation: 根据一个实施例，磁存储器件包括：第一磁性层; 第一磁性层上的非磁性层; 非磁性层上的第二磁性层; 以及围绕第二磁性层的侧表面的非磁性层上的绝缘膜。 第二磁性层具有面向非磁性层的表面的面积小于非磁性层的面积。 非磁性层包括设置在第一磁性层和绝缘膜之间的第一区域。 第一区域包括无定形状态。

    MAGNETIC MEMORY
    2.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20140269033A1

    公开(公告)日：2014-09-18

    申请号：US13962913

    申请日：2013-08-08

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Katsuaki NATORI ,  Koji YAMAKAWA

    IPC: G11C11/16

    CPC classification number: G11C11/161 ,  B82Y25/00 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    Abstract: According to one embodiment, a magnetic memory includes magnetoresistive effect elements each including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer which are successively stacked, and a ferroelectric capacitor provided above the magnetoresistive effect elements via an insulating layer, and including a lower electrode, a ferroelectric film, and an upper electrode which are successively stacked.

    Abstract translation: 根据一个实施例，磁存储器包括磁阻效应元件，每个磁阻效应元件包括依次层叠的第一磁性层，隧道势垒层和第二磁性层，以及经由绝缘层设置在磁阻效应元件上方的铁电电容器，以及 包括依次堆叠的下电极，铁电体膜和上电极。

    NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20160035740A1

    公开(公告)日：2016-02-04

    申请号：US14597259

    申请日：2015-01-15

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Keiichi SAWA ,  Masayuki TANAKA ,  Katsuaki NATORI

    IPC: H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02

    CPC classification number: H01L27/11582 ,  H01L21/02145 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/02321 ,  H01L21/28282 ,  H01L27/11565 ,  H01L29/4234 ,  H01L29/511 ,  H01L29/517

    Abstract: According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film. The second insulating film includes a first portion between the charge storage layer and each electrode, a second portion between each electrode and the inter-layer insulating film, and a third portion that links the first portion and the second portion. In a cross-section of the third portion parallel to the first direction and a second direction toward each electrode from the charge storage layer, a curved surface on the charge storage layer side has a curvature radius larger than a surface on the electrodes side.

    Abstract translation: 根据实施例，非易失性存储器件包括电极，电极之间的层间绝缘膜和延伸穿过电极和层间绝缘膜的至少一个半导体层。 该器件包括在半导体层和每个电极之间的电荷存储层，电荷存储层和半导体层之间的第一绝缘膜和第二绝缘膜。 第二绝缘膜包括电荷存储层和每个电极之间的第一部分，每个电极和层间绝缘膜之间的第二部分以及连接第一部分和第二部分的第三部分。 在平行于第一方向的第三部分的横截面和从电荷存储层朝向每个电极的第二方向上，电荷存储层侧上的曲面的曲率半径大于电极侧的表面。

    MAGNETORESISTIVE EFFECT ELEMENT
    5.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT 有权
    磁感应效应元件

    公开(公告)号：US20140085971A1

    公开(公告)日：2014-03-27

    申请号：US14019415

    申请日：2013-09-05

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Makoto NAGAMINE ,  Daisuke IKENO ,  Koji UEDA ,  Katsuya NISHIYAMA ,  Katsuaki NATORI ,  Koji YAMAKAWA

    IPC: H01L43/02 ,  G11C11/16

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

    Abstract: According to one embodiment, a magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

    Abstract translation: 根据一个实施例，磁阻效应元件包括以下结构。 第一铁磁层具有可变的磁化方向。 第二铁磁层具有不变的磁化方向。 在第一和第二铁磁层之间形成隧道势垒层。 第一铁磁层与隧道势垒层之间的能量势垒高于第二铁磁层与隧道势垒层之间的能量势垒。 第二铁磁层包含主要成分和添加元素。 主要成分含有Fe，Co和Ni中的至少一种。 添加元素含有Mg，Al，Ca，Sc，Ti，V，Mn，Zn，As，Sr，Y，Zr，Nb，Cd，In，Ba，La，Ce，Pr，Nd，Sm中的至少一种， Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Hf，Ta和W.

    MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF 有权
    磁电效应元件及其制造方法

    公开(公告)号：US20140284732A1

    公开(公告)日：2014-09-25

    申请号：US13961805

    申请日：2013-08-07

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Makoto NAGAMINE ,  Daisuke IKENO ,  Katsuya NISHIYAMA ,  Katsuaki NATORI ,  Koji YAMAKAWA

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  H01L43/12

    Abstract: According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.

    Abstract translation: 根据一个实施例，磁阻效应元件包括第一铁磁层，形成在第一铁磁层上的隧道势垒和形成在隧道势垒层上的第二铁磁层。 隧道势垒包括具有尖晶石结构的非磁性氧化物。 组合尖晶石结构的氧化物组合使得单相通过固相在包含对应于尖晶石结构的组分比例并且具有不小于2％的宽度的组分比区域中形成。

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