公开(公告)号：US20170263680A1

公开(公告)日：2017-09-14

申请号：US15268497

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA ,  SK HYNIX INC.

Inventor： Kenichi YOSHINO ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Won Joon CHOI ,  Guk Cheon KIM ,  Yang Kon KIM ,  Jong Koo LIM

IPC: H01L27/24 ,  H01L43/12 ,  H01L45/00 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetoresistive memory device includes an electrode, a first layer which is provided on the electrode and includes an amorphous portion in at least a part of an electrode side, and a magnetoresisive element provided on the first layer.

公开(公告)号：US20170222133A1

公开(公告)日：2017-08-03

申请号：US15187267

申请日：2016-06-20

Applicant: SK hynix Inc. ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Jong-Koo LIM ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Yang-Kon KIM ,  Ku-Youl JUNG ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are electronic device including a variable resistance element and a method for fabricating an electronic device including a variable resistance element. The electronic device including a variable resistance element includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include cooling the substrate, before forming the magnetic correction layer such that the magnetic correction layer is formed over the cooled substrate.

公开(公告)号：US20160380182A1

公开(公告)日：2016-12-29

申请号：US15262821

申请日：2016-09-12

Applicant: KABUSHIKI KAISHA TOSHIBA ,  SK HYNIX INC.

Inventor： Daisuke WATANABE ,  Yang Kon KIM ,  Makoto NAGAMINE ,  Youngmin EEH ,  Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA ,  Guk Cheon KIM ,  Bo Mi LEE ,  Won Joon CHOI

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

Abstract translation: 根据一个实施例，提供了一种磁阻元件，包括第一磁性层，第一磁性层上的非磁性层和非磁性层上的第二磁性层，其中第一和第二磁性层中的一个包括Co中的一个 和Fe，以及具有比Co和Fe更高的标准电极电位的材料。

公开(公告)号：US20170263857A1

公开(公告)日：2017-09-14

申请号：US15268507

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke WATANABE ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive memory device includes a first magnetic layer in which a magnetization direction is variable, a first nonmagnetic layer provided on the first magnetic layer, a second magnetic layer provided on the first nonmagnetic layer, a magnetization direction of the second magnetic layer being invariable, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer includes Mo.

公开(公告)号：US20170263676A1

公开(公告)日：2017-09-14

申请号：US15261755

申请日：2016-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Koji UEDA ,  Makoto NAGAMINE ,  Kazuya SAWADA

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L28/00 ,  H01L43/02 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.

公开(公告)号：US20190109280A1

公开(公告)日：2019-04-11

申请号：US16203114

申请日：2018-11-28

Applicant: SK hynix Inc. ,  TOSHIBA MEMORY CORPORATION

Inventor： Jong-Koo LIM ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Yang-Kon KIM ,  Ku-Youl JUNG ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.

公开(公告)号：US20190079873A1

公开(公告)日：2019-03-14

申请号：US16186231

申请日：2018-11-09

Applicant: SK hynix Inc. ,  Toshiba Memory Corporation

Inventor： Yang-Kon KIM ,  Ki-Seon PARK ,  Bo-Mi LEE ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Daisuke WATANABE ,  Makoto NAGAMINE ,  Young-Min EEH ,  Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA

IPC: G06F12/0875 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10

Abstract: An electronic device includes semiconductor memory, the semiconductor memory including an under layer; a first magnetic layer located over the under layer and having a variable magnetization direction; a tunnel barrier layer located over the first magnetic layer; and a second magnetic layer located over the tunnel barrier layer and having a pinned magnetization direction, wherein the under layer includes a first metal nitride layer having a NaCl crystal structure and a second metal nitride layer containing a light metal.

公开(公告)号：US20140284732A1

公开(公告)日：2014-09-25

申请号：US13961805

申请日：2013-08-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Makoto NAGAMINE ,  Daisuke IKENO ,  Katsuya NISHIYAMA ,  Katsuaki NATORI ,  Koji YAMAKAWA

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the tunnel barrier layer. The tunnel barrier includes a nonmagnetic oxide having a spinel structure. Oxides forming the spinel structure are combined such that a single phase is formed by a solid phase in a component ratio region including a component ratio corresponding to the spinel structure and having a width of not less than 2%.

Abstract translation: 根据一个实施例，磁阻效应元件包括第一铁磁层，形成在第一铁磁层上的隧道势垒和形成在隧道势垒层上的第二铁磁层。 隧道势垒包括具有尖晶石结构的非磁性氧化物。 组合尖晶石结构的氧化物组合使得单相通过固相在包含对应于尖晶石结构的组分比例并且具有不小于2％的宽度的组分比区域中形成。

公开(公告)号：US20170263855A1

公开(公告)日：2017-09-14

申请号：US15261619

申请日：2016-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Makoto NAGAMINE ,  Young Min EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Toshihiko NAGASE

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/12

Abstract: According to one embodiment, a magnetic storage device includes a substrate, a dummy contact disposed on a top surface of the substrate, extending linearly in a direction substantially perpendicular to the top surface of the substrate, and floating electrically, and a magnetoresistive effect element included in a layer and insulated from the dummy contact, wherein the layer is disposed on the top surface of the dummy contact.

公开(公告)号：US20140085971A1

公开(公告)日：2014-03-27

申请号：US14019415

申请日：2013-09-05

Applicant: Kabushiki Kaisha Toshiba

Inventor： Makoto NAGAMINE ,  Daisuke IKENO ,  Koji UEDA ,  Katsuya NISHIYAMA ,  Katsuaki NATORI ,  Koji YAMAKAWA

IPC: H01L43/02 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

Abstract translation: 根据一个实施例，磁阻效应元件包括以下结构。 第一铁磁层具有可变的磁化方向。 第二铁磁层具有不变的磁化方向。 在第一和第二铁磁层之间形成隧道势垒层。 第一铁磁层与隧道势垒层之间的能量势垒高于第二铁磁层与隧道势垒层之间的能量势垒。 第二铁磁层包含主要成分和添加元素。 主要成分含有Fe，Co和Ni中的至少一种。 添加元素含有Mg，Al，Ca，Sc，Ti，V，Mn，Zn，As，Sr，Y，Zr，Nb，Cd，In，Ba，La，Ce，Pr，Nd，Sm中的至少一种， Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Hf，Ta和W.