Invention Application
- Patent Title: MAGNETORESISTIVE ELEMENT
- Patent Title (中): 磁电元件
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Application No.: US15262821Application Date: 2016-09-12
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Publication No.: US20160380182A1Publication Date: 2016-12-29
- Inventor: Daisuke WATANABE , Yang Kon KIM , Makoto NAGAMINE , Youngmin EEH , Koji UEDA , Toshihiko NAGASE , Kazuya SAWADA , Guk Cheon KIM , Bo Mi LEE , Won Joon CHOI
- Applicant: KABUSHIKI KAISHA TOSHIBA , SK HYNIX INC.
- Applicant Address: JP Tokyo KR Icheon-si
- Assignee: KABUSHIKI KAISHA TOSHIBA,SK HYNIX INC.
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,SK HYNIX INC.
- Current Assignee Address: JP Tokyo KR Icheon-si
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; H01L27/22 ; H01L43/08 ; H01L43/10
Abstract:
According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.
Public/Granted literature
- US10103318B2 Magnetoresistive element Public/Granted day:2018-10-16
Information query
IPC分类:
