公开(公告)号：US20170263857A1

公开(公告)日：2017-09-14

申请号：US15268507

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke WATANABE ,  Toshihiko NAGASE ,  Youngmin EEH ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Hiroyuki OHTORI

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive memory device includes a first magnetic layer in which a magnetization direction is variable, a first nonmagnetic layer provided on the first magnetic layer, a second magnetic layer provided on the first nonmagnetic layer, a magnetization direction of the second magnetic layer being invariable, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer includes Mo.

公开(公告)号：US20170263676A1

公开(公告)日：2017-09-14

申请号：US15261755

申请日：2016-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Youngmin EEH ,  Toshihiko NAGASE ,  Daisuke WATANABE ,  Koji UEDA ,  Makoto NAGAMINE ,  Kazuya SAWADA

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L28/00 ,  H01L43/02 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.

公开(公告)号：US20170117459A1

公开(公告)日：2017-04-27

申请号：US15397594

申请日：2017-01-03

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daisuke WATANABE ,  Youngmin EEH ,  Kazuya SAWADA ,  Koji UEDA ,  Toshihiko NAGASE

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01F1/03 ,  H01F10/32

CPC classification number: H01L43/10 ,  H01F1/0306 ,  H01F10/30 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.

公开(公告)号：US20170263680A1

公开(公告)日：2017-09-14

申请号：US15268497

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA ,  SK HYNIX INC.

Inventor： Kenichi YOSHINO ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE ,  Won Joon CHOI ,  Guk Cheon KIM ,  Yang Kon KIM ,  Jong Koo LIM

IPC: H01L27/24 ,  H01L43/12 ,  H01L45/00 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetoresistive memory device includes an electrode, a first layer which is provided on the electrode and includes an amorphous portion in at least a part of an electrode side, and a magnetoresisive element provided on the first layer.

公开(公告)号：US20170222133A1

公开(公告)日：2017-08-03

申请号：US15187267

申请日：2016-06-20

Applicant: SK hynix Inc. ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Jong-Koo LIM ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Yang-Kon KIM ,  Ku-Youl JUNG ,  Toshihiko NAGASE ,  Youngmin EEH ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Makoto NAGAMINE

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided are electronic device including a variable resistance element and a method for fabricating an electronic device including a variable resistance element. The electronic device including a variable resistance element includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include cooling the substrate, before forming the magnetic correction layer such that the magnetic correction layer is formed over the cooled substrate.

公开(公告)号：US20170263858A1

公开(公告)日：2017-09-14

申请号：US15268527

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuyuki SONODA ,  Daisuke WATANABE ,  Masatoshi YOSHIKAWA ,  Youngmin EEH ,  Shuichi TSUBATA ,  Toshihiko NAGASE ,  Yutaka HASHIMOTO ,  Kazuya SAWADA ,  Kazuhiro TOMIOKA ,  Kenichi YOSHINO ,  Tadaaki OIKAWA

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

公开(公告)号：US20160380182A1

公开(公告)日：2016-12-29

申请号：US15262821

申请日：2016-09-12

Applicant: KABUSHIKI KAISHA TOSHIBA ,  SK HYNIX INC.

Inventor： Daisuke WATANABE ,  Yang Kon KIM ,  Makoto NAGAMINE ,  Youngmin EEH ,  Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA ,  Guk Cheon KIM ,  Bo Mi LEE ,  Won Joon CHOI

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

Abstract translation: 根据一个实施例，提供了一种磁阻元件，包括第一磁性层，第一磁性层上的非磁性层和非磁性层上的第二磁性层，其中第一和第二磁性层中的一个包括Co中的一个 和Fe，以及具有比Co和Fe更高的标准电极电位的材料。

公开(公告)号：US20160315251A1

公开(公告)日：2016-10-27

申请号：US15198543

申请日：2016-06-30

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toshihiko NAGASE ,  Tadashi KAI ,  Youngmin EEH ,  Koji UEDA ,  Daisuke WATANABE ,  Kazuya SAWADA ,  Hiroaki YODA

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

Abstract translation: 一种磁阻元件，包括第一磁性层; 设置在第一磁性层上的第一非磁性层，由SrTiO 3，SrFeO 3，LaAlO 3，NdCoO 3或BN形成的第一非磁性层; 以及设置在所述第一非磁性层上的第二磁性层，其中所述第一非磁性层与所述第一磁性层晶格匹配，并且所述第二磁性层与所述第一非磁性层晶格匹配。