公开(公告)号：US20190079873A1

公开(公告)日：2019-03-14

申请号：US16186231

申请日：2018-11-09

Applicant: SK hynix Inc. ,  Toshiba Memory Corporation

Inventor： Yang-Kon KIM ,  Ki-Seon PARK ,  Bo-Mi LEE ,  Won-Joon CHOI ,  Guk-Cheon KIM ,  Daisuke WATANABE ,  Makoto NAGAMINE ,  Young-Min EEH ,  Koji UEDA ,  Toshihiko NAGASE ,  Kazuya SAWADA

IPC: G06F12/0875 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10

Abstract: An electronic device includes semiconductor memory, the semiconductor memory including an under layer; a first magnetic layer located over the under layer and having a variable magnetization direction; a tunnel barrier layer located over the first magnetic layer; and a second magnetic layer located over the tunnel barrier layer and having a pinned magnetization direction, wherein the under layer includes a first metal nitride layer having a NaCl crystal structure and a second metal nitride layer containing a light metal.