公开(公告)号：US20060284117A1

公开(公告)日：2006-12-21

申请号：US11445677

申请日：2006-06-02

Applicant: John Vanderpot ,  Yongzhang Huang

Inventor： John Vanderpot ,  Yongzhang Huang

IPC: H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

公开(公告)号：US20060284071A1

公开(公告)日：2006-12-21

申请号：US11445722

申请日：2006-06-02

Applicant: John Vanderpot ,  Yongzhang Huang

Inventor： John Vanderpot ,  Yongzhang Huang

IPC: B01D59/44

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

公开(公告)号：US07476855B2

公开(公告)日：2009-01-13

申请号：US11523144

申请日：2006-09-19

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: H01J37/137 ,  H01J37/30 ,  H01J49/20 ,  H01J49/30 ,  H01J37/304

CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

公开(公告)号：US20080067435A1

公开(公告)日：2008-03-20

申请号：US11523144

申请日：2006-09-19

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: H01J37/317 ,  H01J49/20 ,  H01J49/30

CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

公开(公告)号：US20070278427A1

公开(公告)日：2007-12-06

申请号：US11543346

申请日：2006-10-04

Applicant: Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

Inventor： Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703

Abstract: A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

Abstract translation: 一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。

公开(公告)号：US07655930B2

公开(公告)日：2010-02-02

申请号：US11689769

申请日：2007-03-22

Applicant: Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

Inventor： Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

IPC: H01J37/08 ,  H01J7/24

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

公开(公告)号：US07566887B2

公开(公告)日：2009-07-28

申请号：US11648979

申请日：2007-01-03

Applicant: Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

Inventor： Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

IPC: G21K5/00

CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

公开(公告)号：US06881966B2

公开(公告)日：2005-04-19

申请号：US10461702

申请日：2003-06-13

Applicant: Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

Inventor： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

IPC: H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

Abstract translation: 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

公开(公告)号：US06441382B1

公开(公告)日：2002-08-27

申请号：US09316657

申请日：1999-05-21

Applicant: Yongzhang Huang

Inventor： Yongzhang Huang

IPC: H01J37317

CPC classification number: H01J37/3171 ,  H01J2237/04756

Abstract: A deceleration electrode for a high-energy, ultra-low ion implanter is provided. The deceleration electrodes are “tilted” (i.e., not perpendicular with respect the ion beam axis. The deceleration electrode reduces the energy of the ion beam and simultaneously separates neutral particles out of the ion beam. The length of the deceleration electrode is slightly longer than a conventional deceleration electrode. However, because the device functions to also separate neutral particles out of the ion beam, the need for a separate neutral particle separation device is eliminated. Thus, the compact design of the dual function electrode configuration permits a shortening of the distance that a high-current, ultra-low energy ion beam must travel to the target wafer. Further, because the neutral particles can be almost completely separated from the ion beam, the decel ratio may be set high enabling an ultra-low energy, high current ion beam. In the tilted decel apparatus of the present invention, a plurality of decel electrodes having openings are arranged in an inclined manner against the axis which is perpendicular to the base axis of a beam passage. An ion beam impinging with a predetermined ion beam offset distance and inclination angle passes through gaps formed between the decel electrodes and thus, an ion beam is decelerated and neutral particles are separated from the ion beam. Thus, an ion beam can be formed having a high current, low neutral contamination, and ultra-low energy.

Abstract translation: 提供了一种用于高能超低离子注入机的减速电极。 减速电极相对于离子束轴线“倾斜”（即不垂直），减速电极降低离子束的能量，同时将中性粒子从离子束中分离出来，减速电极的长度略长于 然而，由于该装置还用于将离子束中的中性粒子分离，因此不需要分离的中性粒子分离装置，因此双功能电极构造的紧凑设计可以缩短 高电流，超低能量离子束必须行进到目标晶片的距离，此外，由于中性粒子几乎可以完全与离子束分离，所以减小比可以设定得高，能够实现超低能量， 高电流离子束在本发明的倾斜减速装置中，具有开口的多个减速电极设置在倾斜的人中 相对于垂直于梁通道的基轴的轴线。 以预定的离子束偏移距离和倾斜角度照射的离子束通过形成在减速电极之间的间隙，因此离子束被减速，中性粒子与离子束分离。 因此，可以形成具有高电流，低中性污染和超低能量的离子束。

公开(公告)号：US07915597B2

公开(公告)日：2011-03-29

申请号：US12050594

申请日：2008-03-18

Applicant: Yongzhang Huang ,  Ilya Pokidov

Inventor： Yongzhang Huang ,  Ilya Pokidov

IPC: H01J3/14

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/20 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/20214 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.

Abstract translation: 一种系统和方法提取电极系统，包括提取电极，其中所述提取电极还限定孔并形成离子源的外壁的一部分，并且被配置为从离子源提取离子，抑制盘半组件 包括形成可变抑制孔径的两个抑制电极板半部，包括形成可变接地孔的两个接地电极板半部的接地盘半组件，其中抑制盘半组件配置在提取电极和接地盘半部之间 组件，其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变，并且其中所述引出电极系统与摆锤往复驱动装置一起使用。