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    Hybrid magnetic/electrostatic deflector for ion implantation systems
    1.
    发明授权
    Hybrid magnetic/electrostatic deflector for ion implantation systems 有权
    用于离子注入系统的混合磁/静电偏转器

    公开(公告)号：US06881966B2

    公开(公告)日：2005-04-19

    申请号：US10461702

    申请日：2003-06-13

    Applicant: Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

    Inventor： Victor M. Benveniste ,  Robert D. Rathmell ,  Yongzhang Huang

    IPC: H01J27/18 ,  H01J37/00 ,  H01J37/05 ,  H01J37/147 ,  H01J37/30 ,  H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147 ,  H01J2237/057

    Abstract: A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.

    Abstract translation: 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。

    High mass resolution magnet for ribbon beam ion implanters
    3.
    发明授权
    High mass resolution magnet for ribbon beam ion implanters 有权
    用于带状束离子注入机的高质量分辨率磁体

    公开(公告)号：US06770888B1

    公开(公告)日：2004-08-03

    申请号：US10606087

    申请日：2003-06-25

    Applicant: Victor M. Benveniste ,  Yongzhang Huang

    Inventor： Victor M. Benveniste ,  Yongzhang Huang

    IPC: H01J37147

    CPC classification number: H01J37/32082 ,  H01J37/05 ,  H01J37/3171 ,  H01J37/3266 ,  H01J2237/0041

    Abstract: A mass analyzer for a ribbon shaped ion beam is disclosed. The mass analyzer comprises a pair of coils that define an entrance end and an exit end of the analyzer. Field clamps are employed at or proximate to one or more of the entrance and exit ends of the mass analyzer. The field clamps operate to terminate fringing fields close to the entrance and exit ends of the mass analyzer, thereby reducing the impact of such fringing fields on the ribbon beam and improving beam uniformity.

    Abstract translation: 公开了一种用于带状离子束的质量分析器。 质量分析器包括限定分析器的入口端和出口端的一对线圈。 场夹具用于质量分析器的入口和出口端中的一个或多个处或其附近。 场夹具用于终止接近质量分析器入口和出口端的边缘场，从而减少这种边缘场对带状束的影响，并提高光束的均匀性。

    Deflecting acceleration/deceleration gap
    4.
    发明授权
    Deflecting acceleration/deceleration gap 有权
    偏转加速/减速间隙

    公开(公告)号：US06777696B1

    公开(公告)日：2004-08-17

    申请号：US10370952

    申请日：2003-02-21

    Applicant: Robert D. Rathmell ,  Bo H. Vanderberg ,  Yongzhang Huang

    Inventor： Robert D. Rathmell ,  Bo H. Vanderberg ,  Yongzhang Huang

    IPC: H01J37317

    CPC classification number: H01J37/3171 ,  H01J37/1472

    Abstract: An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.

    Abstract translation: 公开了一种用于离子束离子加速/减速的加速结构和相关方法。 该结构和相关方法适用于在半导体制造期间选择性地将离子注入到工件或晶片中以选择性地掺杂晶片的区域。 除了加速和/或减速离子之外，本发明的方面还用于聚焦以及偏转离子束的离子。 这是通过将离子束穿过具有在其上形成的电位的电极来实现的。 离子束也被净化，因为光束内的电中性污染物不受电位的影响，并且通常沿着离子束的原始路径继续行进。 电极也以这样的方式布置，以便使束必须行进的距离最小化，从而减轻了射束的机会。

    Beam tuning with automatic magnet pole rotation for ion implanters
    5.
    发明授权
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US07476855B2

    公开(公告)日：2009-01-13

    申请号：US11523144

    申请日：2006-09-19

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: H01J37/137 ,  H01J37/30 ,  H01J49/20 ,  H01J49/30 ,  H01J37/304

    CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

    Beam tuning with automatic magnet pole rotation for ion implanters
    6.
    发明申请
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US20080067435A1

    公开(公告)日：2008-03-20

    申请号：US11523144

    申请日：2006-09-19

    Applicant: Yongzhang Huang

    Inventor： Yongzhang Huang

    IPC: H01J37/317 ,  H01J49/20 ,  H01J49/30

    CPC classification number: H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    Abstract: An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    Abstract translation: 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

    Ion source arc chamber seal
    10.
    发明授权
    Ion source arc chamber seal 有权
    离子源电弧室密封

    公开(公告)号：US07655930B2

    公开(公告)日：2010-02-02

    申请号：US11689769

    申请日：2007-03-22

    Applicant: Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

    Inventor： Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

    IPC: H01J37/08 ,  H01J7/24

    CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

    Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

    Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

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