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公开(公告)号:US11935857B2
公开(公告)日:2024-03-19
申请号:US17952080
申请日:2022-09-23
Applicant: Intel Corporation
Inventor: Kristof Darmawaikarta , Robert May , Sashi Kandanur , Sri Ranga Sai Boyapati , Srinivas Pietambaram , Steve Cho , Jung Kyu Han , Thomas Heaton , Ali Lehaf , Ravindranadh Eluri , Hiroki Tanaka , Aleksandar Aleksov , Dilan Seneviratne
IPC: H01L21/00 , H01L21/768 , H01L23/00 , H01L23/522
CPC classification number: H01L24/17 , H01L21/76877 , H01L21/76897 , H01L23/5226 , H01L24/09 , H01L24/11 , H01L2924/01029 , H01L2924/0105
Abstract: Embodiments described herein include electronic packages and methods of forming such packages. An electronic package includes a package substrate, first conductive pads formed over the package substrate, where the first conductive pads have a first surface area, and second conductive pads over the package substrate, where the second conductive pads have a second surface area greater than the first surface area. The electronic package also includes a solder resist layer over the first and second conductive pads, and a plurality of solder resist openings that expose one of the first or second conductive pads. The solder resist openings of the electronic package may include conductive material that is substantially coplanar with a top surface of the solder resist layer. The electronic package further includes solder bumps over the conductive material in the solder resist openings, where the solder bumps have a low bump thickness variation (BTV).
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公开(公告)号:US11488918B2
公开(公告)日:2022-11-01
申请号:US16177022
申请日:2018-10-31
Applicant: Intel Corporation
Inventor: Kristof Darmawaikarta , Robert May , Sashi Kandanur , Sri Ranga Sai Boyapati , Srinivas Pietambaram , Steve Cho , Jung Kyu Han , Thomas Heaton , Ali Lehaf , Ravindranadh Eluri , Hiroki Tanaka , Aleksandar Aleksov , Dilan Seneviratne
IPC: H01L21/00 , H01L23/00 , H01L23/522 , H01L21/768
Abstract: Embodiments described herein include electronic packages and methods of forming such packages. An electronic package includes a package substrate, first conductive pads formed over the package substrate, where the first conductive pads have a first surface area, and second conductive pads over the package substrate, where the second conductive pads have a second surface area greater than the first surface area. The electronic package also includes a solder resist layer over the first and second conductive pads, and a plurality of solder resist openings that expose one of the first or second conductive pads. The solder resist openings of the electronic package may include conductive material that is substantially coplanar with a top surface of the solder resist layer. The electronic package further includes solder bumps over the conductive material in the solder resist openings, where the solder bumps have a low bump thickness variation (BTV).
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公开(公告)号:US11373972B2
公开(公告)日:2022-06-28
申请号:US16902887
申请日:2020-06-16
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , Nitin A. Deshpande , Mohit Bhatia , Anurag Tripathi , Takeshi Nakazawa , Steve Cho
IPC: H01L23/538 , H01L23/00
Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.
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4.
公开(公告)号:US20230343769A1
公开(公告)日:2023-10-26
申请号:US17728147
申请日:2022-04-25
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , Nitin A. Deshpande , Debendra Mallik , Steve Cho , Babak Sabi
IPC: H01L25/00 , H01L21/78 , H01L23/00 , H01L23/522 , H01L25/18
CPC classification number: H01L25/18 , H01L21/78 , H01L23/5226 , H01L24/08 , H01L24/94 , H01L25/50 , H01L2224/08145 , H01L2224/13 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155
Abstract: Embodiments of a microelectronic assembly comprise a microelectronic assembly, comprising: a stack of layers coupled by at least fusion bonds; a package substrate coupled to a first layer in the stack of layers; one or more dies in the first layer; and one or more dies in a second layer in the stack of layers, the second layer coupled to the first layer, wherein: a copper lining is between adjacent surfaces of any two adjacent dies in at least one of the first layer and the second layer, and the copper lining contacts and substantially covers the adjacent surfaces. In various embodiments, the dies comprise dummy dies and integrated circuit (IC) dies, the dummy dies are one of: semiconductor dies without any ICs, and semiconductor dies having non-functional ICs, and the IC dies comprise semiconductor dies having functional ICs.
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公开(公告)号:US20220270998A1
公开(公告)日:2022-08-25
申请号:US17740501
申请日:2022-05-10
Applicant: Intel Corporation
Inventor: Omkar G. Karhade , Nitin A. Deshpande , Mohit Bhatia , Anurag Tripathi , Takeshi Nakazawa , Steve Cho
IPC: H01L23/00 , H01L23/538
Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.
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6.
公开(公告)号:US20240096809A1
公开(公告)日:2024-03-21
申请号:US17932624
申请日:2022-09-15
Applicant: Intel Corporation
Inventor: Hiroki Tanaka , Robert Alan May , Onur Ozkan , Ali Lehaf , Steve Cho , Gang Duan , Jieping Zhang , Rahul N. Manepalli , Ravindranath Vithal Mahajan , Hamid Azimi
IPC: H01L23/538 , H01L21/48 , H01L23/00 , H01L23/31 , H01L25/00 , H01L25/065
CPC classification number: H01L23/5386 , H01L21/4857 , H01L23/3121 , H01L23/5383 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/19 , H01L24/20 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L24/32 , H01L2224/13082 , H01L2224/1403 , H01L2224/16238 , H01L2224/19 , H01L2224/211 , H01L2224/2201 , H01L2224/32225
Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a substrate having a surface including first conductive contacts and second conductive contacts, wherein the first conductive contacts have a first thickness and the second conductive contacts have a second thickness different than the first thickness; a first microelectronic component having third conductive contacts, wherein respective ones of the third conductive contacts are coupled to respective ones of the first conductive contacts by first interconnects, wherein the first interconnects include solder having a thickness between 2 microns and 35 microns; and a second microelectronic component having fourth conductive contact, wherein respective ones of the fourth conductive contacts are coupled to respective ones of the second conductive contacts by second interconnects, wherein the second interconnects include solder having a thickness between 5 microns and 50 microns.
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公开(公告)号:US20230097624A1
公开(公告)日:2023-03-30
申请号:US17484486
申请日:2021-09-24
Applicant: Intel Corporation
Inventor: Kyle McElhinny , Onur Ozkan , Ali Lehaf , Xiaoying Guo , Steve Cho , Leonel Arana , Jung Kyu Han , Srinivas Pietambaram , Sashi Kandanur , Alexander Aguinaga
IPC: H01L23/498 , H01L23/00 , H01L23/12 , H01L25/065 , H01L21/48 , H01L21/50
Abstract: Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes an array of bumps to electrically couple the die to the substrate. Each of the bumps have a corresponding base. Different ones of the bases have different widths that vary spatially across the array of bumps.
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公开(公告)号:US20230086180A1
公开(公告)日:2023-03-23
申请号:US17479854
申请日:2021-09-20
Applicant: Intel Corporation
Inventor: Onur Ozkan , Edvin Cetegen , Steve Cho , Nicholas S. Haehn , Jacob Vehonsky , Gang Duan
IPC: H01L23/00
Abstract: A semiconductor device may include a first plate-like element having a first substantially planar connection surface with a first connection pad and a second plate-like element having a second substantially planar connection surface with a second connection pad corresponding to the first connection pad. The device may also include a connection electrically and physically coupling the first and second plate-like elements and arranged between the first and second connection pads. The connection may include a deformed elongate element arranged on the first connection pad and extending toward the second connection pad and solder in contact with the second connection pad and the elongate element.
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公开(公告)号:US20190393145A1
公开(公告)日:2019-12-26
申请号:US16554008
申请日:2019-08-28
Applicant: Intel Corporation
Inventor: Srinivas V. Pietambaram , Jung Kyu Han , Ali Lehaf , Steve Cho , Thomas Heaton , Hiroki Tanaka , Kristof Darmawikarta , Robert Alan May , Sri Ranga Sai Boyapati
IPC: H01L23/498 , H01L23/00 , H01L23/538 , H01L25/18 , H01L25/00 , H01L21/48
Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.
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公开(公告)号:US10431537B1
公开(公告)日:2019-10-01
申请号:US16014134
申请日:2018-06-21
Applicant: Intel Corporation
Inventor: Srinivas Pietambaram , Jung Kyu Han , Ali Lehaf , Steve Cho , Thomas Heaton , Hiroki Tanaka , Kristof Darmawikarta , Robert Alan May , Sri Ranga Sai Boyapati
IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L23/498 , H01L23/538 , H01L25/18 , H01L21/48 , H01L23/00 , H01L25/00
Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.
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