公开(公告)号：US20210013320A1

公开(公告)日：2021-01-14

申请号：US16925523

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L21/04 ,  H01L29/10 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.

公开(公告)号：US20180061962A1

公开(公告)日：2018-03-01

申请号：US15724604

申请日：2017-10-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

IPC: H01L29/66 ,  H01L29/872 ,  H01L29/861 ,  H01L21/265 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/36 ,  H01L29/739 ,  H01L29/78 ,  H01L29/74 ,  H01L29/40 ,  H01L29/06 ,  H01L29/165 ,  H01L21/22

CPC classification number: H01L29/66348 ,  H01L21/2205 ,  H01L21/2658 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/102 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7428 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/861 ,  H01L29/872

Abstract: A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.

公开(公告)号：US09496364B2

公开(公告)日：2016-11-15

申请号：US14754907

申请日：2015-06-30

Applicant: Infineon Technologies AG

Inventor： Peter Irsigler ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Helmut Strack

IPC: H01L29/51 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L29/16 ,  H01L29/20 ,  H03K17/687

CPC classification number: H01L29/516 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/6684 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/78391 ,  H03K17/687

Abstract: In accordance with one component, a power field effect transistor is proposed, including a substrate, a channel, a gate electrode, and a gate insulator. The gate insulator is arranged at least partly between the gate electrode and the channel and includes a material having a hysteresis with respect to its polarization, such that a switching state of the transistor produced by a voltage applied to the gate electrode is maintained after the voltage has been switched off. Furthermore, a half-bridge circuit is proposed, including a high-side transistor in accordance with the construction according to the disclosure, and a low-side transistor, and also methods and circuits for driving.

Abstract translation: 根据一个部件，提出了一种功率场效应晶体管，其包括衬底，沟道，栅电极和栅极绝缘体。 栅极绝缘体至少部分地布置在栅电极和沟道之间并且包括相对于其极化具有滞后的材料，使得在施加到栅电极的电压之后保持晶体管的开关状态，在电压 已被关闭。 此外，提出了一种半桥电路，包括根据本发明的结构的高边晶体管和低侧晶体管，以及用于驱动的​​方法和电路。

公开(公告)号：US20150380511A1

公开(公告)日：2015-12-31

申请号：US14754907

申请日：2015-06-30

Applicant: Infineon Technologies AG

Inventor： Peter Irsigler ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Helmut Strack

IPC: H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/739 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/516 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/6684 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/78391 ,  H03K17/687

Abstract: In accordance with one component, a power field effect transistor is proposed, including a substrate, a channel, a gate electrode, and a gate insulator. The gate insulator is arranged at least partly between the gate electrode and the channel and includes a material having a hysteresis with respect to its polarization, such that a switching state of the transistor produced by a voltage applied to the gate electrode is maintained after the voltage has been switched off. Furthermore, a half-bridge circuit is proposed, including a high-side transistor in accordance with the construction according to the disclosure, and a low-side transistor, and also methods and circuits for driving.

Abstract translation: 根据一个部件，提出了一种功率场效应晶体管，其包括衬底，沟道，栅电极和栅极绝缘体。 栅极绝缘体至少部分地布置在栅电极和沟道之间并且包括相对于其极化具有滞后的材料，使得在施加到栅电极的电压之后保持晶体管的开关状态，在电压 已被关闭。 此外，提出了一种半桥电路，包括根据本发明的结构的高边晶体管和低侧晶体管，以及用于驱动的​​方法和电路。

公开(公告)号：US12107141B2

公开(公告)日：2024-10-01

申请号：US17691251

申请日：2022-03-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/78

CPC classification number: H01L29/66068 ,  H01L21/02529 ,  H01L21/0465 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/7813

Abstract: A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Z1/2 defects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.

公开(公告)号：US10325996B2

公开(公告)日：2019-06-18

申请号：US15724604

申请日：2017-10-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

IPC: H01L21/22 ,  H01L29/66 ,  H01L29/36 ,  H01L29/739 ,  H01L29/74 ,  H01L21/265 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/40 ,  H01L29/06 ,  H01L29/165

Abstract: A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.

公开(公告)号：US20130330908A1

公开(公告)日：2013-12-12

申请号：US13966915

申请日：2013-08-14

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Hans-Joachim Schulze

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/161 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/7831

Abstract: A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.

Abstract translation: 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。

公开(公告)号：US20220199800A1

公开(公告)日：2022-06-23

申请号：US17691251

申请日：2022-03-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L29/66 ,  H01L29/16 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/78

Abstract: A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Z1/2 defects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.

公开(公告)号：US11302795B2

公开(公告)日：2022-04-12

申请号：US16925523

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Jens Peter Konrath ,  Andre Rainer Stegner ,  Helmut Strack

IPC: H01L21/02 ,  H01L21/04 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/10

Abstract: A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.

公开(公告)号：US09012980B1

公开(公告)日：2015-04-21

申请号：US14096804

申请日：2013-12-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Hans Weber ,  Werner Schustereder ,  Wolfgang Jantscher ,  Helmut Strack

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/66 ,  H01L21/265 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L21/263 ,  H01L21/324 ,  H01L22/14 ,  H01L22/34 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7835

Abstract: A method of manufacturing a semiconductor device includes forming a charge compensation device structure in a semiconductor substrate. The method further includes measuring a value of an electric characteristic related to the charge compensation device. At least one of proton irradiation and annealing parameters are adjusted based on the measured value. Based on the at least one of the adjusted proton irradiation and annealing parameters the semiconductor substrate is irradiated with protons, and thereafter, the semiconductor substrate is annealed.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底中形成电荷补偿器件结构。 该方法还包括测量与电荷补偿装置相关的电特性的值。 基于测量值调整质子照射和退火参数中的至少一个。 基于所调整的质子照射和退火参数中的至少一个，用质子照射半导体衬底，然后对半导体衬底进行退火。