Invention Grant
- Patent Title: Method for producing a doped semiconductor layer
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Application No.: US15724604Application Date: 2017-10-04
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Publication No.: US10325996B2Publication Date: 2019-06-18
- Inventor: Hans-Joachim Schulze , Franz Hirler , Anton Mauder , Helmut Strack , Frank Kahlmann , Gerhard Miller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L29/66 ; H01L29/36 ; H01L29/739 ; H01L29/74 ; H01L21/265 ; H01L29/78 ; H01L29/861 ; H01L29/872 ; H01L29/08 ; H01L29/10 ; H01L29/167 ; H01L29/40 ; H01L29/06 ; H01L29/165
Abstract:
A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.
Public/Granted literature
- US20180061962A1 Method for Producing a Doped Semiconductor Layer Public/Granted day:2018-03-01
Information query
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