Invention Application
US20130330908A1 SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD
审中-公开
具有高度比例和方法的垂直结构的半导体元件
- Patent Title: SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD
- Patent Title (中): 具有高度比例和方法的垂直结构的半导体元件
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Application No.: US13966915Application Date: 2013-08-14
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Publication No.: US20130330908A1Publication Date: 2013-12-12
- Inventor: Anton Mauder , Helmut Strack , Armin Willmeroth , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102007004320.3 20070129
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
Information query
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