Invention Application
- Patent Title: Method of Manufacturing a Semiconductor Device and Semiconductor Device
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Application No.: US16925523Application Date: 2020-07-10
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Publication No.: US20210013320A1Publication Date: 2021-01-14
- Inventor: Hans-Joachim Schulze , Jens Peter Konrath , Andre Rainer Stegner , Helmut Strack
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102019118803.2 20190711
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/16 ; H01L29/78 ; H01L21/04 ; H01L29/10 ; H01L21/02
Abstract:
A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.
Public/Granted literature
- US11302795B2 Method of manufacturing a semiconductor device and semiconductor device Public/Granted day:2022-04-12
Information query
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