公开(公告)号：US20100127306A1

公开(公告)日：2010-05-27

申请号：US12644376

申请日：2009-12-22

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US07335574B2

公开(公告)日：2008-02-26

申请号：US11100598

申请日：2005-04-07

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20110212609A1

公开(公告)日：2011-09-01

申请号：US13102666

申请日：2011-05-06

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/265

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US07977165B2

公开(公告)日：2011-07-12

申请号：US12644376

申请日：2009-12-22

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/332

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20050233499A1

公开(公告)日：2005-10-20

申请号：US11100598

申请日：2005-04-07

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/28 ,  H01L21/304 ,  H01L21/336 ,  H01L21/44 ,  H01L21/60 ,  H01L21/68 ,  H01L29/41 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US07687907B2

公开(公告)日：2010-03-30

申请号：US11966492

申请日：2007-12-28

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20080105971A1

公开(公告)日：2008-05-08

申请号：US11966492

申请日：2007-12-28

申请人： Hidekazu OKUDA ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu OKUDA ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L23/48

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US4593168A

公开(公告)日：1986-06-03

申请号：US581268

申请日：1984-02-17

申请人： Haruo Amada

发明人： Haruo Amada

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/18 ,  H01L21/22 ,  H05B6/80 ,  H05B6/78

CPC分类号： H01L21/18 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H05B6/806 ,  Y10T29/41

摘要： The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is projected on the wafer in this state so as to heat it. According to the present invention, only the wafer is heated and, hence, the wafer can be heat-treated uniformly and efficiently with great precision.

摘要翻译： 本发明涉及利用电磁波对半导体晶片进行热处理的方法。 晶片被气体喷射而浮起并保持在非接触状态，并且在这种状态下将电磁波（如微波）投影在晶片上以便加热。 根据本发明，只有晶片被加热，因此可以高精度地均匀且有效地热处理晶片。

公开(公告)号：US5134962A

公开(公告)日：1992-08-04

申请号：US524378

申请日：1990-05-16

申请人： Haruo Amada ,  Akihiro Kojima ,  Hiroshi Kagohashi ,  Atsuyuki Sakai ,  Katsumasa Shimura ,  Hisamitsu Maekawa

发明人： Haruo Amada ,  Akihiro Kojima ,  Hiroshi Kagohashi ,  Atsuyuki Sakai ,  Katsumasa Shimura ,  Hisamitsu Maekawa

IPC分类号： G03F7/16 ,  B05C5/00 ,  B05C11/08 ,  B05C11/10 ,  G11B5/842 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01L21/6715 ,  B05C11/08

摘要： The present invention relates to a spin coating apparatus for feeding a clean liquid at a fixed rate. In any of the feeding apparatus in the prior art, no constituent other than a filter has the function of eliminating foreign matter, and the operation of feeding a liquid under precise control is not attained. This results in the problem of the mixing of the foreign matter (and air bubbles) in the feed liquid, and the problem of nonuniformity in a feed speed as well as a feed amount. As expedients for solving these problems, the present invention provides the functions of automatically sensing and excluding factors for the appearances of the foreign matters, and devices for automatically and precisely controlling feed control elements such as a pump, thereby feeding the clean liquid in a constant amount and at a constant speed.

摘要翻译： 本发明涉及一种用于以固定速率供给清洁液体的旋涂装置。 在现有技术中的任何一个进料装置中，除了过滤器之外的其它成分都不具有消除异物的功能，并且不能实现在精确控制下供给液体的操作。 这导致进料液体中异物（和气泡）的混合以及进料速度不均匀以及进料量的问题。 作为解决这些问题的方法，本发明提供了自动检测和排除外来物质的因素的功能，以及用于自动和精确地控制诸如泵的进料控制元件的装置，由此将清洁液体进料恒定 数量和恒定速度。

公开(公告)号：US08039276B2

公开(公告)日：2011-10-18

申请号：US12719067

申请日：2010-03-08

申请人： Haruo Amada ,  Kenji Shimazawa

发明人： Haruo Amada ,  Kenji Shimazawa

IPC分类号： H01L21/30

CPC分类号： H01L29/7395 ,  H01L21/3083 ,  H01L21/6835 ,  H01L21/78 ,  H01L22/14 ,  H01L29/66333 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/00

摘要： The semiconductor device si formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thinkness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than the first thickness and forming an insulation film pattern having a first insulation film and containing an annular insulation film pattern along the periphery of a second main surface of the semiconductor wafer over the second main surface along the periphery thereof. The second main surface of the semiconductor wafer is bonded to a pressure sensitive adhesive sheet thereby holding the device semiconductor wafer by way of the pressure sensitive adhesive sheet to a dicing frame in a state where the insulation film pattern is present.

摘要翻译： 半导体器件si通过在具有第一想法的半导体晶片的第一主表面上形成第一金属膜，对半导体晶片的第二主表面进行反向磨削，从而形成比第一厚度薄的第二厚度，并形成 绝缘膜图案具有第一绝缘膜，并且沿其周边在第二主表面上沿着半导体晶片的第二主表面的周边包含环形绝缘膜图案。 将半导体晶片的第二主表面粘合到压敏粘合片上，从而在存在绝缘膜图案的状态下通过压敏粘合片将器件半导体晶片保持在切割框架上。