公开(公告)号：US20080105971A1

公开(公告)日：2008-05-08

申请号：US11966492

申请日：2007-12-28

申请人： Hidekazu OKUDA ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu OKUDA ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L23/48

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。