公开(公告)号：US08492176B2

公开(公告)日：2013-07-23

申请号：US13609953

申请日：2012-09-11

申请人： Haruo Amada

发明人： Haruo Amada

IPC分类号： H01L21/66

CPC分类号： B24B7/228 ,  H01L21/28512 ,  H01L21/67132 ,  H01L29/66348

摘要： To provide a method of manufacturing a semiconductor device including a step of attaching a surface protective tape onto the surface of a wafer which has completed the wafer process, a step of subjecting the back surface of the wafer to back grinding, and a step of attaching a peeling assist tape onto the surface protective tape while vacuum-adsorbing the back surface of the wafer to apply a tension to the assist tape, thereby separating the surface protective tape from the wafer, wherein a vacuum suction system has a peripheral suction system for the peripheral part of the wafer and an internal suction system for the internal region of the wafer.

摘要翻译： 为了提供一种制造半导体器件的方法，包括将表面保护带附着到已经完成晶片工艺的晶片的表面上的步骤，对晶片的背面进行背面磨削的步骤，以及附接步骤 剥离辅助带，同时真空吸附晶片的背面以向辅助带施加张力，从而将表面保护带与晶片分离，其中真空抽吸系统具有用于 晶片的周边部分和用于晶片内部区域的内部抽吸系统。

公开(公告)号：US08153452B2

公开(公告)日：2012-04-10

申请号：US13237235

申请日：2011-09-20

申请人： Haruo Amada ,  Kenji Shimazawa

发明人： Haruo Amada ,  Kenji Shimazawa

IPC分类号： H01L21/30

CPC分类号： H01L29/7395 ,  H01L21/3083 ,  H01L21/6835 ,  H01L21/78 ,  H01L22/14 ,  H01L29/66333 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/00

摘要： The semiconductor device is formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thickness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than the first thickness and forming an insulation film pattern having a first insulation film and containing an annular insulation film pattern along the periphery of a second main surface of the semiconductor wafer over the second main surface along the periphery thereof. The second main surface of the semiconductor wafer is bonded to a pressure sensitive adhesive sheet thereby holding the device semiconductor wafer by way of the pressure sensitive adhesive sheet to a dicing frame in a state where the insulation film pattern is present.

摘要翻译： 半导体器件通过在具有第一厚度的半导体晶片的第一主表面上形成第一金属膜，对半导体晶片的第二主表面进行反向磨削，从而形成比第一厚度更薄的第二厚度，并形成 绝缘膜图案具有第一绝缘膜，并且沿其周边在第二主表面上沿着半导体晶片的第二主表面的周边包含环形绝缘膜图案。 将半导体晶片的第二主表面粘合到压敏粘合片上，从而在存在绝缘膜图案的状态下通过压敏粘合片将器件半导体晶片保持在切割框架上。

公开(公告)号：US07687907B2

公开(公告)日：2010-03-30

申请号：US11966492

申请日：2007-12-28

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20080105971A1

公开(公告)日：2008-05-08

申请号：US11966492

申请日：2007-12-28

申请人： Hidekazu OKUDA ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu OKUDA ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L23/48

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US4667076A

公开(公告)日：1987-05-19

申请号：US783085

申请日：1985-10-02

申请人： Haruo Amada

发明人： Haruo Amada

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H01L21/18 ,  H01L21/22 ,  H05B6/80 ,  H05B6/78

CPC分类号： H01L21/18 ,  C30B25/10 ,  C30B25/12 ,  C30B31/12 ,  C30B31/14 ,  H05B6/806 ,  Y10T29/41

摘要： The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is projected on the wafer in this state so as to heat it. According to the present invention, only the wafer is heated and, hence, the wafer can be heat-treated uniformly and efficiently with great precision.

摘要翻译： 本发明涉及利用电磁波对半导体晶片进行热处理的方法。 晶片被气体喷射而浮起并保持在非接触状态，并且在这种状态下将电磁波（如微波）投影在晶片上以便加热。 根据本发明，只有晶片被加热，因此可以高精度地均匀且有效地热处理晶片。

公开(公告)号：US08039276B2

公开(公告)日：2011-10-18

申请号：US12719067

申请日：2010-03-08

申请人： Haruo Amada ,  Kenji Shimazawa

发明人： Haruo Amada ,  Kenji Shimazawa

IPC分类号： H01L21/30

CPC分类号： H01L29/7395 ,  H01L21/3083 ,  H01L21/6835 ,  H01L21/78 ,  H01L22/14 ,  H01L29/66333 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/00

摘要： The semiconductor device si formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thinkness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than the first thickness and forming an insulation film pattern having a first insulation film and containing an annular insulation film pattern along the periphery of a second main surface of the semiconductor wafer over the second main surface along the periphery thereof. The second main surface of the semiconductor wafer is bonded to a pressure sensitive adhesive sheet thereby holding the device semiconductor wafer by way of the pressure sensitive adhesive sheet to a dicing frame in a state where the insulation film pattern is present.

摘要翻译： 半导体器件si通过在具有第一想法的半导体晶片的第一主表面上形成第一金属膜，对半导体晶片的第二主表面进行反向磨削，从而形成比第一厚度薄的第二厚度，并形成 绝缘膜图案具有第一绝缘膜，并且沿其周边在第二主表面上沿着半导体晶片的第二主表面的周边包含环形绝缘膜图案。 将半导体晶片的第二主表面粘合到压敏粘合片上，从而在存在绝缘膜图案的状态下通过压敏粘合片将器件半导体晶片保持在切割框架上。

公开(公告)号：US20110212609A1

公开(公告)日：2011-09-01

申请号：US13102666

申请日：2011-05-06

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/265

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US07977165B2

公开(公告)日：2011-07-12

申请号：US12644376

申请日：2009-12-22

申请人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

发明人： Hidekazu Okuda ,  Haruo Amada ,  Taizo Hashimoto

IPC分类号： H01L21/332

CPC分类号： H01L29/7397 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/29 ,  H01L24/73 ,  H01L24/81 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01014 ,  H01L2924/0105 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/013

摘要： Provided is a technology capable of improving a production yield of a semiconductor device having, for example, IGBG as a semiconductor element. After formation of an interconnect on the surface side of a semiconductor substrate, a supporting substrate covering the interconnect is bonded onto the interconnect. Then, a BG tape is overlapped and bonded onto the supporting substrate and the semiconductor substrate is ground from the backside. The BG tape is then peeled off and an impurity is introduced into the backside of the semiconductor substrate by ion implantation. Then, the supporting substrate is peeled off, followed by heat treatment of the semiconductor substrate.

摘要翻译： 提供了能够提高具有例如作为半导体元件的IGBG的半导体器件的制造成品率的技术。 在半导体衬底的表面侧上形成互连后，覆盖互连的支撑衬底接合到互连上。 然后，将BG带重叠并接合到支撑基板上，并且半导体基板从背面研磨。 然后将BG带剥离，通过离子注入将杂质引入半导体衬底的背面。 然后，将支撑基板剥离，然后对半导体基板进行热处理。

公开(公告)号：US20130089970A1

公开(公告)日：2013-04-11

申请号：US13609953

申请日：2012-09-11

申请人： Haruo AMADA

发明人： Haruo AMADA

IPC分类号： H01L21/304

CPC分类号： B24B7/228 ,  H01L21/28512 ,  H01L21/67132 ,  H01L29/66348

摘要： To provide a method of manufacturing a semiconductor device including a step of attaching a surface protective tape onto the surface of a wafer which has completed the wafer process, a step of subjecting the back surface of the wafer to back grinding, and a step of attaching a peeling assist tape onto the surface protective tape while vacuum-adsorbing the back surface of the wafer to apply a tension to the assist tape, thereby separating the surface protective tape from the wafer, wherein a vacuum suction system has a peripheral suction system for the peripheral part of the wafer and an internal suction system for the internal region of the wafer.

摘要翻译： 为了提供一种制造半导体器件的方法，包括将表面保护带附着到已经完成晶片工艺的晶片的表面上的步骤，对晶片的背面进行背面磨削的步骤，以及附接步骤 剥离辅助带，同时真空吸附晶片的背面以向辅助带施加张力，从而将表面保护带与晶片分离，其中真空抽吸系统具有用于 晶片的周边部分和用于晶片内部区域的内部抽吸系统。

公开(公告)号：US20120009695A1

公开(公告)日：2012-01-12

申请号：US13237235

申请日：2011-09-20

申请人： Haruo Amada ,  Kenji Shimazawa

发明人： Haruo Amada ,  Kenji Shimazawa

IPC分类号： H01L21/66 ,  H01L21/822

CPC分类号： H01L29/7395 ,  H01L21/3083 ,  H01L21/6835 ,  H01L21/78 ,  H01L22/14 ,  H01L29/66333 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/00

摘要： The semiconductor device is formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thickness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than the first thickness and forming an insulation film pattern having a first insulation film and containing an annular insulation film pattern along the periphery of a second main surface of the semiconductor wafer over the second main surface along the periphery thereof. The second main surface of the semiconductor wafer is bonded to a pressure sensitive adhesive sheet thereby holding the device semiconductor wafer by way of the pressure sensitive adhesive sheet to a dicing frame in a state where the insulation film pattern is present.

摘要翻译： 半导体器件通过在具有第一厚度的半导体晶片的第一主表面上形成第一金属膜，对半导体晶片的第二主表面进行反向磨削，从而形成比第一厚度更薄的第二厚度，并形成 绝缘膜图案具有第一绝缘膜，并且沿其周边在第二主表面上沿着半导体晶片的第二主表面的周边包含环形绝缘膜图案。 将半导体晶片的第二主表面粘合到压敏粘合片上，从而在存在绝缘膜图案的状态下通过压敏粘合片将器件半导体晶片保持在切割框架上。