公开(公告)号：US20130089970A1

公开(公告)日：2013-04-11

申请号：US13609953

申请日：2012-09-11

申请人： Haruo AMADA

发明人： Haruo AMADA

IPC分类号： H01L21/304

CPC分类号： B24B7/228 ,  H01L21/28512 ,  H01L21/67132 ,  H01L29/66348

摘要： To provide a method of manufacturing a semiconductor device including a step of attaching a surface protective tape onto the surface of a wafer which has completed the wafer process, a step of subjecting the back surface of the wafer to back grinding, and a step of attaching a peeling assist tape onto the surface protective tape while vacuum-adsorbing the back surface of the wafer to apply a tension to the assist tape, thereby separating the surface protective tape from the wafer, wherein a vacuum suction system has a peripheral suction system for the peripheral part of the wafer and an internal suction system for the internal region of the wafer.

摘要翻译： 为了提供一种制造半导体器件的方法，包括将表面保护带附着到已经完成晶片工艺的晶片的表面上的步骤，对晶片的背面进行背面磨削的步骤，以及附接步骤 剥离辅助带，同时真空吸附晶片的背面以向辅助带施加张力，从而将表面保护带与晶片分离，其中真空抽吸系统具有用于 晶片的周边部分和用于晶片内部区域的内部抽吸系统。

公开(公告)号：US20100267175A1

公开(公告)日：2010-10-21

申请号：US12719067

申请日：2010-03-08

申请人： Haruo AMADA ,  Kenji SHIMAZAWA

发明人： Haruo AMADA ,  Kenji SHIMAZAWA

IPC分类号： H01L21/66 ,  H01L21/78

CPC分类号： H01L29/7395 ,  H01L21/3083 ,  H01L21/6835 ,  H01L21/78 ,  H01L22/14 ,  H01L29/66333 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/00

摘要： In a process for a semiconductor typically represented by a vertical power MOSFET, etc. of repeating various fabrications in a state of a thin film wafer with the thickness of the wafer being 200 μm or less, it is a standard procedure of conducting processing in a stage of bonding a reinforcing glass sheet to a device surface of the wafer (main surface on the side of surface) in the step after film thickness-reduction. However according to the study of the present inventors, it has been found that about 70% for the manufacturing cost is concerned with the reinforcing glass sheet. In the present invention, a stress relief insulation film pattern is formed to the peripheral end of the rear face of a wafer in which processing to the device surface (surface side face) of the wafer has been completed substantially and back grinding has been applied.

摘要翻译： 在通常以由晶片厚度为200μm以下的薄膜晶片的状态重复各种制造的垂直功率MOSFET等通常表示的半导体的制造方法中，是在 在薄膜厚度减薄之后的步骤中将强化玻璃板粘合到晶片的器件表面（表面侧的主表面）的阶段。 然而，根据本发明人的研究，已经发现制造成本的约70％涉及增强玻璃板。 在本发明中，在晶片背面的周面的周面形成有应力消除绝缘膜图案，其中晶片的器件表面（表面侧）的处理已基本完成，并且已经进行了背面研磨。