发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US13237235申请日： 2011-09-20
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公开(公告)号： US08153452B2公开(公告)日： 2012-04-10
- 发明人: Haruo Amada , Kenji Shimazawa
- 申请人： Haruo Amada , Kenji Shimazawa
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Mattingly & Malur, PC
- 优先权： JP2009-101679 20090420
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
The semiconductor device is formed by forming a first metal film over a first main surface of a semiconductor wafer having a first thickness, performing back grinding to a second main surface of the semiconductor wafer thereby making a second thickness thinner than the first thickness and forming an insulation film pattern having a first insulation film and containing an annular insulation film pattern along the periphery of a second main surface of the semiconductor wafer over the second main surface along the periphery thereof. The second main surface of the semiconductor wafer is bonded to a pressure sensitive adhesive sheet thereby holding the device semiconductor wafer by way of the pressure sensitive adhesive sheet to a dicing frame in a state where the insulation film pattern is present.
公开/授权文献
- US20120009695A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2012-01-12
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