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公开(公告)号：US20220384235A1
公开(公告)日：2022-12-01
申请号：US17700527
申请日：2022-03-22
发明人： Kazuhiro KITAHARA
IPC分类号： H01L21/683 , H01L21/304
摘要： Provided is a manufacturing method of a semiconductor device comprising a semiconductor substrate which includes a first surface and a second surface which is on an opposite side of the first surface, the method comprising: a front surface processing for providing a first resist to the first surface of the semiconductor substrate and processing the first surface; a first protective film forming for forming a first protective film above the first surface of the semiconductor substrate; a second protective film forming for forming a second protective film above the first protective film, wherein a material of the second protective film is different from that of the first protective film; a back surface processing for processing the second surface of the semiconductor substrate; and a protective film removing for selectively removing the second protective film.
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公开(公告)号：US20170263746A1
公开(公告)日：2017-09-14
申请号：US15421366
申请日：2017-01-31
发明人： Tsukasa TASHIMA , Kazuhiro KITAHARA
IPC分类号： H01L29/78 , H01L21/02 , H01L29/49 , H01L29/66 , H01L29/40 , H01L29/423 , H01L29/16 , H01L29/10
CPC分类号： H01L29/7802 , H01L21/02529 , H01L21/02532 , H01L29/1095 , H01L29/1608 , H01L29/401 , H01L29/42376 , H01L29/4958 , H01L29/66068 , H01L29/66712
摘要： To restrict alloy formation between a hydrogen-absorbing layer of titanium or the like and an electrode of aluminum or the like, provided is a semiconductor device. The semiconductor device may include a semiconductor substrate. The semiconductor device may include a first layer that is formed above the semiconductor substrate. The first layer may contain a hydrogen-absorbing first metal. The semiconductor device may include a second layer that is formed above the first layer. The second layer may contain a second metal differing from the first metal. The semiconductor device may include an Si-containing layer that is formed between the first layer and the second layer and contains silicon. The second layer may further include silicon. The Si-containing layer may have a higher silicon concentration than the second layer. The second metal may be aluminum. The first metal may be titanium.
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公开(公告)号：US20180158914A1
公开(公告)日：2018-06-07
申请号：US15796913
申请日：2017-10-30
IPC分类号： H01L29/16 , H01L29/06 , H01L29/872 , H01L29/45 , H01L29/47 , H01L21/02 , H01L21/04 , H01L29/66
摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a Schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region. The second electrode has a Ti—Al alloy layer on a surface in contact with the first electrode. The second electrode further has therein a nickel silicide layer containing titanium.
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公开(公告)号：US20240339333A1
公开(公告)日：2024-10-10
申请号：US18731181
申请日：2024-05-31
发明人： Noriaki NOJI , Naoko KODAMA , Kazuhiro KITAHARA , Tatsuya HASHIMOTO , Ryota KATAOKA , Shunya HAYASHIDA
IPC分类号： H01L21/3213 , H01L21/285
CPC分类号： H01L21/32139 , H01L21/28518
摘要： A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating partially covering the surface structure; forming an aluminum alloy film in contact with the surface structure and covering an entire area where the surface structure, including the interlayer insulating film, is formed; forming a resist film on the surface of the aluminum alloy film so as to have a thickness that covers the surface of the aluminum alloy while exposing a convex-shaped defect formed at the surface of the aluminum alloy film; patterning the aluminum alloy film using the resist film as a mask; and removing the resist film.
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公开(公告)号：US20240290663A1
公开(公告)日：2024-08-29
申请号：US18398561
申请日：2023-12-28
发明人： Tatsuya HASHIMOTO , Kazuhiro KITAHARA , Noriaki NOJI , Ryota KATAOKA , Naoko KODAMA , Shunya HAYASHIDA
CPC分类号： H01L22/12 , H01L21/78 , H01L29/401 , H01L29/66348
摘要： A method of manufacturing a semiconductor device, including: forming a surface structure including a metal oxide semiconductor structure in a semiconductor substrate; forming an interlayer insulating film covering the surface structure; forming, in the interlayer insulating film, a contact hole to expose the surface structure; forming a first Al alloy film in contact with the surface structure and covering an entire surface of the interlayer insulating film, the first Al alloy film having a thickness of 0.05 μm to 0.5 μm; detecting, using a dark field, a defect of a surface of the first Al alloy film; forming a second Al alloy film covering the entire surface of the first Al alloy film; patterning the first and second Al alloy films; annealing the first and second Al alloy films; and dicing the semiconductor substrate into a plurality of chips, and picking, among the plurality of chips, chips free of the detected defect.
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公开(公告)号：US20240339332A1
公开(公告)日：2024-10-10
申请号：US18585576
申请日：2024-02-23
发明人： Noriaki NOJI , Naoko KODAMA , Kazuhiro KITAHARA , Tatsuya HASHIMOTO , Ryota KATAOKA , Shunya HAYASHIDA
IPC分类号： H01L21/3213 , H01L29/739 , H01L29/861
CPC分类号： H01L21/32139 , H01L29/7397 , H01L29/861
摘要： A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating film partially covering the surface structure; forming an aluminum alloy film in contact with the surface structure and covering an entire area where the surface structure, including the interlayer insulating film, is formed; forming a resist film covering the surface of the aluminum alloy film so as to have a thickness partially exposing a convex-shaped defect of the aluminum alloy film; patterning the aluminum alloy film using the resist film as a mask; and removing the resist film.
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公开(公告)号：US20240036486A1
公开(公告)日：2024-02-01
申请号：US18337028
申请日：2023-06-18
发明人： Kazuhiro KITAHARA , Naoko KODAMA
IPC分类号： G03F9/00
CPC分类号： G03F9/708 , G03F9/7088 , G03F9/7084
摘要： Provided is a manufacturing method of a semiconductor apparatus including: detecting a position by detecting positional deviation of the upper surface mark and the lower surface mark, by acquiring an upper surface image obtained by observing the upper surface mark from above the upper surface of the semiconductor substrate and a lower surface image obtained by observing the lower surface mark through the semiconductor substrate from above the upper surface of the semiconductor substrate; and forming an element by forming a semiconductor element in the semiconductor substrate, where in a top view in which the upper surface mark and the lower surface mark are projected onto a plane parallel to the upper surface, one of the upper surface mark and the lower surface mark is larger than an other, and the one entirely covers the other.
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公开(公告)号：US20230027894A1
公开(公告)日：2023-01-26
申请号：US17746934
申请日：2022-05-17
IPC分类号： H01L23/00 , H01L21/78 , H01L23/544 , H01L23/58
摘要： Provided is a semiconductor device including: a semiconductor substrate provided with an active portion and an edge termination structure portion surrounding the active portion; an interlayer dielectric film provided above the semiconductor substrate; a protective film provided above the interlayer dielectric film; and a protruding portion provided farther from the active portion than the edge termination structure portion and protruding further than the interlayer dielectric film. The protruding portion is not covered with the protective film. The protective film is provided closer to the active portion than the protruding portion.
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