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公开(公告)号：US20190181221A1
公开(公告)日：2019-06-13
申请号：US16266229
申请日：2019-02-04
IPC分类号： H01L29/06 , H01L29/36 , H01L29/66 , H01L29/861 , H01L29/10 , H01L29/739 , H01L29/32 , H01L21/263
摘要： Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n− drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n− drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
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公开(公告)号：US20140377942A1
公开(公告)日：2014-12-25
申请号：US14302103
申请日：2014-06-11
发明人： Seiji NOGUCHI , Hidenao KURIBAYASHI
IPC分类号： H01L21/266 , H01L21/324
CPC分类号： H01L27/0664 , H01L21/2253 , H01L21/26513 , H01L21/266 , H01L21/304 , H01L21/32139 , H01L21/324 , H01L29/7397
摘要： A method for manufacturing a semiconductor device suppresses loss of vacuum in a chamber of an ion implanter, sag of a resist mask pattern for ion implantation, and producing a resist residue after ashing. First ion implanting process implants n-type impurity to form n+ impurity layer on the whole back surface of n− semiconductor wafer. A resist mask on the back surface of the wafer covers a part corresponding to where n+ cathode layer will be formed. A second ion implanting process implants p-type impurity using the resist mask to form p+ impurity layer in the interior of the n+ impurity layer. Second ion implanting process is split into two or more times. The dose of p-type impurity in second ion implanting process is greater than that of n-type impurity in first ion implanting process. The resist mask is removed, and p+ the n+ impurity layers activated.
摘要翻译： 半导体装置的制造方法抑制离子注入机的室内的真空损失，离子注入用抗蚀剂掩模图案的下垂，灰化后产生抗蚀剂残留物。 第一离子注入工艺在n半导体晶片的整个背面上埋入n型杂质以形成n +杂质层。 晶片背面的抗蚀剂掩模覆盖对应于将形成n +阴极层的部分。 第二离子注入工艺使用抗蚀剂掩模注入p型杂质，以在n +杂质层的内部形成p +杂质层。 第二次离子注入过程分为两次或更多次。 在第一离子注入过程中，第二离子注入过程中p型杂质的剂量大于n型杂质的剂量。 去除抗蚀剂掩模，并激活p + n +杂质层。
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公开(公告)号：US20140291723A1
公开(公告)日：2014-10-02
申请号：US14301914
申请日：2014-06-11
IPC分类号： H01L29/739 , H01L29/49 , H01L29/06 , H01L29/66
CPC分类号： H01L29/7395 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L29/0615 , H01L29/0646 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/1004 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/41708 , H01L29/49 , H01L29/6609 , H01L29/66333 , H01L29/861
摘要： A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.
摘要翻译： 公开了一种制造半导体器件的方法，其中在进行质子注入之后，通过炉退火工艺形成氢诱导供体，以形成n型场停止层。 通过激光退火工艺在质子通过区域中产生的障碍减少以形成n型紊乱减少区域。 因此，通过质子注入形成n型场阻止层和n型失调抑制区域。 因此，可以提供一种稳定且廉价的半导体器件，该半导体器件具有低导电性并且可以改善诸如漏电流的电特性，以及用于制造半导体器件的方法。
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公开(公告)号：US20180108765A1
公开(公告)日：2018-04-19
申请号：US15837318
申请日：2017-12-11
IPC分类号： H01L29/739 , H01L29/10 , H01L29/66 , H01L29/08 , H01L29/36 , H01L29/06 , H01L21/265 , H01L29/49 , H01L21/268 , H01L29/417 , H01L29/32 , H01L29/861 , H01L21/324
CPC分类号： H01L29/7395 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L29/0615 , H01L29/0646 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/1004 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/41708 , H01L29/49 , H01L29/6609 , H01L29/66333 , H01L29/861
摘要： A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.
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公开(公告)号：US20170345888A1
公开(公告)日：2017-11-30
申请号：US15662601
申请日：2017-07-28
IPC分类号： H01L29/06 , H01L29/739 , H01L29/10 , H01L21/263 , H01L29/36 , H01L29/32 , H01L29/861 , H01L29/66
CPC分类号： H01L29/0615 , H01L21/263 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/6609 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n− drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n− drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
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公开(公告)号：US20170170126A1
公开(公告)日：2017-06-15
申请号：US15336802
申请日：2016-10-28
发明人： Hidenao KURIBAYASHI
IPC分类号： H01L23/532 , H01L21/768 , H01L21/02 , H01L29/45
CPC分类号： H01L23/53266 , H01L21/02378 , H01L21/76841 , H01L21/76895 , H01L23/26 , H01L24/05 , H01L29/1608 , H01L29/401 , H01L29/45 , H01L29/7811 , H01L29/7827 , H01L29/861 , H01L2224/0603 , H01L2224/48463
摘要： To restrict the deterioration of properties in a semiconductor device due to hydrogen, provided is a semiconductor device including a semiconductor substrate; a hydrogen absorbing layer that is provided above a top surface of the semiconductor substrate and formed of a first metal having a hydrogen absorbing property; a nitride layer that is provided above the hydrogen absorbing layer and formed of a nitride of the first metal; an alloy layer that is provided above the nitride layer and formed of an alloy of aluminum and a second metal; and an electrode layer that is provided above the alloy layer and formed of aluminum. A pure metal layer of the second metal is not provided between the electrode layer and the nitride layer.
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公开(公告)号：US20190319090A1
公开(公告)日：2019-10-17
申请号：US16429457
申请日：2019-06-03
IPC分类号： H01L29/06 , H01L29/10 , H01L29/861 , H01L29/739 , H01L29/66 , H01L29/36 , H01L21/263 , H01L29/32 , H01L29/08 , H01L21/324 , H01L21/265
摘要： Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
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公开(公告)号：US20170047408A1
公开(公告)日：2017-02-16
申请号：US15334356
申请日：2016-10-26
IPC分类号： H01L29/16 , H01L29/36 , H01L29/32 , H01L29/66 , H01L21/265 , H01L21/324 , H01L29/739 , H01L29/06 , H01L21/02
CPC分类号： H01L29/1608 , H01L21/02529 , H01L21/02609 , H01L21/02694 , H01L21/046 , H01L21/265 , H01L21/26506 , H01L21/268 , H01L21/324 , H01L29/0615 , H01L29/32 , H01L29/36 , H01L29/6606 , H01L29/66068 , H01L29/66348 , H01L29/7397 , H01L29/78 , H01L29/861 , H01L29/868
摘要： A method of manufacturing a silicon carbide semiconductor device. The method includes providing an n-type semiconductor substrate having first and second principal surfaces, introducing an impurity from a first principal surface of the semiconductor substrate at a first position, activating the impurity to form a diffusion layer in the semiconductor substrate at a second position, implanting protons at a third position that is deeper from the first principal surface than the first position, the protons generating crystal defects in a region through which the protons pass, converting by thermal treating the protons into hydrogen induced donors to form an n-type field stop layer at a fourth position deeper from the first principal surface than the second position, reducing by the thermal treating the generated crystal defects to form an n-type crystal defect reduction region, and forming an electrode on the second principal surface after implanting the protons.
摘要翻译： 一种制造碳化硅半导体器件的方法。 该方法包括提供具有第一和第二主表面的n型半导体衬底，在第一位置从半导体衬底的第一主表面引入杂质，激活杂质以在第二位置在半导体衬底中形成扩散层 在第一主表面比第一位置更深的第三位置处注入质子，质子在质子通过的区域产生晶体缺陷，通过将质子热处理转化成氢诱导的供体形成n型 在比第一主表面更深的第四位置处的第二位置停止层，通过热处理所产生的晶体缺陷以形成n型晶体缺陷减少区域，以及在植入第二主表面之后在第二主表面上形成电极 质子
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公开(公告)号：US20140246755A1
公开(公告)日：2014-09-04
申请号：US14276546
申请日：2014-05-13
IPC分类号： H01L29/32 , H01L29/861 , H01L29/10 , H01L29/739
CPC分类号： H01L29/063 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/66128 , H01L29/7395 , H01L29/861 , H01L29/8611
摘要： Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
摘要翻译： 通过质子注入将氢原子和晶体缺陷引入到n-半导体衬底中。 通过在质子注入之前或之后的电子束照射在n半导体衬底中产生晶体缺陷。 然后，进行用于产生供体的热处理。 在用于产生供体的热处理期间适当地控制晶体缺陷的量以增加供体生成速率。 此外，当用于发生供体的热处理结束时，通过电子束照射和质子注入形成的晶体缺陷被回收并被控制到适当量的晶体缺陷。 因此，例如，可以提高击穿电压并减小漏电流。
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公开(公告)号：US20140070268A1
公开(公告)日：2014-03-13
申请号：US14079072
申请日：2013-11-13
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L21/26513 , H01L21/2855 , H01L21/324 , H01L29/0615 , H01L29/0619 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/0847 , H01L29/1004 , H01L29/1095 , H01L29/167 , H01L29/36 , H01L29/4236 , H01L29/66348 , H01L29/7395
摘要： In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n− type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 μm or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm−3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.
摘要翻译： 在本发明的一些方面，n型场致发光层可以具有如下程度的总杂质：响应施加额定电压而扩展的耗尽层与n型场 - 停止层内部一起停止，连同 n型漂移层的总杂质。 此外，n型场致发光层可以具有浓度梯度，使得n型场致发光层的杂质浓度从p +型集电极层向p型基极层减小，扩散深度为20 妈妈还是更多 此外，在6×10 15 cm -3以上的峰值杂质浓度可以比n型场致发光层的峰值杂质浓度高的n +型缓冲层，以及6×10 15 cm -3以上的峰值杂质浓度的十分之一以上 p +型集电极层可以包含在n型场停止层和p +型集电极层之间。
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