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公开(公告)号:US20240282782A1
公开(公告)日:2024-08-22
申请号:US18640015
申请日:2024-04-19
Applicant: BOE Technology Group Co., Ltd.
Inventor: Guoteng LI , Shuilang DONG , Xinhong LU , Jingshang ZHOU , Liuqing LI , Zhao CUI , Dapeng XUE , Zhiqiang XU , Jintao PENG , Weixing LIU , Kai GUO , Chunfang ZHANG , Meirong LU , Wanpeng TENG
CPC classification number: H01L27/1248 , H01L25/167
Abstract: A display panel and a display device are provided. The display panel includes a plurality of display units, each display unit includes a transparent area, and the display panel further includes a base substrate and a composite functional layer. The composite functional layer is provided on a side of the base substrate and has a first through-hole formed therein, and the first through-hole is provided in the transparent area. The composite functional layer includes a composite transparent layer and a light-shielding layer. The composite transparent layer includes a plurality of transparent functional layers, and includes a light-transmitting part surrounding the first through-hole. An orthographic projection of the light-shielding layer on the base substrate covers an orthographic projection of at least a portion of the light-transmitting part on the base substrate.
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公开(公告)号:US20230299208A1
公开(公告)日:2023-09-21
申请号:US18322981
申请日:2023-05-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Lizhong WANG , Tianmin ZHOU , Hehe HU , Xiaochun XU , Nianqi YAO , Dapeng XUE , Shuilang DONG
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/7869 , H01L27/1225 , H01L29/66969 , H01L27/127
Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.
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公开(公告)号:US20240250177A1
公开(公告)日:2024-07-25
申请号:US18014269
申请日:2022-03-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Dapeng XUE , Lizhong WANG , Shuilang DONG , Hehe HU , Nianqi YAO , Guangcai YUAN , Ce NING , Zhengliang LI , Dongfang WANG , Liping LEI , Chen XU , Jie HUANG
IPC: H01L29/786 , H01L27/12 , H01L29/417
CPC classification number: H01L29/7869 , H01L27/1225 , H01L29/41733 , H01L29/78696
Abstract: A metal oxide thin film transistor is provided, which includes a metal oxide semiconductor layer, including a first semiconductor layer and a second semiconductor layer, the carrier mobility of the first semiconductor layer is higher than that of the second semiconductor layer; the metal oxide semiconductor layer includes a lower surface, an upper surface and a lateral surface, the source electrode is in contact with the lateral surface and the upper surface; the region where the lateral surface contacts the source electrode or the drain electrode includes a first contact region and a second contact region; which have the shape: a first angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the first contact region is larger than a second angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the second contact region.
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4.
公开(公告)号:US20240212639A1
公开(公告)日:2024-06-27
申请号:US17913798
申请日:2021-09-24
Applicant: BOE Technology Group Co., Ltd.
Inventor: Shuilang DONG , Ce NING , Guangcai YUAN , Hehe HU , Lizhong WANG , Nianqi YAO , Dapeng XUE , Liping LEI , Chen XU , Dongfang WANG , Zhengliang LI
IPC: G09G3/36
CPC classification number: G09G3/36 , G09G2310/0286 , G09G2310/061 , G09G2330/021
Abstract: Voltage providing unit, voltage providing method, display driving module and display device are provided. The voltage providing unit, applied to a display panel, is configured to provide a control voltage signal for a driving circuit, and the voltage providing unit includes a buck circuit and a first electrical level converting circuit. The buck circuit is configured to receive a first voltage signal and perform a buck operation on the first voltage signal to obtain a second voltage signal; and the first electrical level converting circuit is connected to the buck circuit, and is configured to receive an input control voltage, a third voltage signal and the second voltage signal, and to generate the control voltage signal in accordance with the input control voltage, the third voltage signal and the second voltage signal, a voltage value of the control voltage signal is less than a predetermined voltage value.
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公开(公告)号:US20230043951A1
公开(公告)日:2023-02-09
申请号:US17790308
申请日:2021-08-31
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Ke WANG , Zhanfeng CAO , Xinhong LU , Qi QI , Yan QU , Zhiwei LIANG , Yingwei LIU , Dapeng XUE , Guoqiang WANG , Jianguo WANG , Song LIU , Yongfei LI , Ting ZENG , Huan LIU , Wanru DONG , Heren GUI , Jian YANG , Haifeng HU , Yu JIANG , Peng XU , Weiwei CHU , Qi GAO
IPC: H01L33/62 , H01L25/075 , H01L21/48 , H01L23/498
Abstract: An array substrate and a manufacturing method therefor, a display panel, and a backlight module, are provided. The array substrate may comprise a base substrate, a metal wiring layer, a first planarization layer, an electrode layer, a second planarization layer, and a functional device layer stacked in sequence. The electrode layer comprises a metal sub-layer and a conductive sub-layer stacked on one side of the base substrate in sequence; the material of the metal sub-layer comprises a metal or a metal alloy; the conductive sub-layer has an oxidation resistance and covers the metal sub-layer . The functional device layer is disposed on the side of the second planarization layer distant from the base substrate, and comprises a plurality of functional devices electrically connected to the electrode layer.
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公开(公告)号:US20220186359A1
公开(公告)日:2022-06-16
申请号:US17485170
申请日:2021-09-24
Applicant: BOE Technology Group Co., Ltd.
Inventor: Nianqi YAO , Ce NING , Zhengliang LI , Hehe HU , Dapeng XUE , Lizhong WANG , Shuilang DONG , Jie HUANG , Jiayu HE , Lubin SHI , Yancai LI
IPC: C23C14/50
Abstract: A fixture, a tray and a sputtering system. The fixture is internally provided with a support structure and a clamping structure connected with each other, wherein the clamping structure is configured to clamp a to-be-sputtered substrate; an orthographic projection of the clamping structure on a plane where the support structure is located and the support structure share an superimposed area and are separate in non-superimposed areas; wherein the support structure located in the non-superimposed area and/or the clamping structure located in the non-superimposed area has a first hollowed structure. The fixture is internally provided with the first hollowed structure, such that a part of an area of the to-be-sputtered substrate covered by the fixture may be exposed via the first hollowed structure when the fixture holds the to-be-sputtered substrate, so as to reduce the area of the to-be-sputtered substrate covered by the fixture.
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公开(公告)号:US20250143112A1
公开(公告)日:2025-05-01
申请号:US18692796
申请日:2023-07-31
Applicant: BOE Technology Group Co., Ltd.
Inventor: Dapeng XUE , Yingwei LIU , Ke WANG , Zhanfeng CAO
IPC: H10K59/131 , H10K59/12
Abstract: Disclosed are a display substrate. The display substrate of the present disclosure includes a base substrate, a pixel drive circuit, and a connection structure. The base substrate is provided with a connection via hole penetrating in a thickness direction of the base substrate, and the base substrate includes a first surface and a second surface disposed oppositely along the thickness direction of the base substrate; the pixel drive circuit is disposed on the first surface; the signal wiring is disposed on the second surface; and the connection structure is disposed in the connection via hole and electrically connects the signal wiring with the pixel drive circuit. The connection via hole is partially filled by the connection structure.
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8.
公开(公告)号:US20230110228A1
公开(公告)日:2023-04-13
申请号:US17905246
申请日:2020-03-19
Inventor: Dapeng XUE , Zheng LIU , Hehe HU , Lizhong WANG , Shuilang DONG , Nianqi YAO
IPC: H01L29/66 , H01L29/786 , H01L29/45 , H01L29/40
Abstract: Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.
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公开(公告)号:US20220208070A1
公开(公告)日:2022-06-30
申请号:US17535127
申请日:2021-11-24
Applicant: BOE Technology Group Co., Ltd.
Inventor: Shuilang DONG , Shanshan XU , Guangcai YUAN , Zhanfeng CAO , Ce NING , Lizhong WANG , Dapeng XUE , Nianqi YAO
IPC: G09G3/20
Abstract: A shift register unit includes an input sub-circuit, a pull-down node driving sub-circuit and an output sub-circuit. The pull-down node driving sub-circuit includes a first connection unit, a first voltage-reduction unit and a second connection unit, and configured to: under the control of the first voltage signal terminal and the pull-up node, transmit a first voltage signal from the first voltage signal terminal to the first pull-down node via the first connection unit, and reduce a voltage applied to the second connection unit via the first voltage-reduction unit; and transmit a second voltage signal from the second voltage signal terminal to the first pull-down node via the second connection unit under the control of the pull-up node.
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公开(公告)号:US20220020822A1
公开(公告)日:2022-01-20
申请号:US17214176
申请日:2021-03-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Kai SUI , Xiaolei ZHANG , Zhongyuan SUN , Yuan JIA , Dapeng XUE , Lubin SHI
Abstract: The present disclosure provides a color filter substrate and a method for manufacturing the same, and a display device, and the color filter substrate includes a base substrate, a black matrix and a color filter layer located on the base substrate, a quantum dot layer located on a side of the color filter layer away from the base substrate, a barrier layer located on a side of the black matrix away from the base substrate, and a first inorganic layer, and the first inorganic layer at least includes: a first portion located between the color filter layer and the quantum dot layer; a second portion located on the base substrate and between the quantum dot layer and the barrier layer; and a third portion located on a side of the barrier layer away from the base substrate.
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