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公开(公告)号：US20240234532A1
公开(公告)日：2024-07-11
申请号：US17925222
申请日：2021-12-27
发明人： Hehe HU , Dongfang WANG , Fengjuan LIU , Ce NING , Zhengliang LI , Jiayu HE , Yan QU , Kun ZHAO , Jie HUANG , Liping LEI , Yunsik IM , Shunhang ZHANG , Nianqi YAO , Feifei LI
IPC分类号： H01L29/43 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号： H01L29/435 , H01L27/1214 , H01L29/41733 , H01L29/66742
摘要： The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.
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公开(公告)号：US20240219779A1
公开(公告)日：2024-07-04
申请号：US18605643
申请日：2024-03-14
发明人： Jinshuai DUAN , Xiaojuan WU , Hongliang YUAN , Wei ZHAO , Yao BI , Jiaxing WANG , Hao YAN , Li TIAN , Liping LEI
IPC分类号： G02F1/1339 , G02F1/1333 , G02F1/1343 , G02F1/1362
CPC分类号： G02F1/13394 , G02F1/133345 , G02F1/13398 , G02F1/134309 , G02F1/13439 , G02F1/136209 , G02F1/136286
摘要： A liquid crystal display panel is provided. The liquid crystal display panel includes: a first substrate and a second substrate arranged opposite to each other, and a liquid crystal layer and a plurality of strip-shaped spacers disposed between the first substrate and the second substrate. In the liquid crystal display panel, there is an overlapping area between an orthographic projection of a first signal line on a target base and an orthographic projection of a second signal line on the target base, and an orthographic projection of the strip-shaped spacer on the target base is not overlapped with the overlapping area.
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公开(公告)号：US20240097042A1
公开(公告)日：2024-03-21
申请号：US17781773
申请日：2021-06-25
发明人： Lizhong WANG , Guangcai YUAN , Ce NING , Nianqi YAO , Hehe HU , Liping LEI , Dongfang WANG , Dapeng XUE , Shuilang DONG , Zhengliang LI
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66742
摘要： At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.
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公开(公告)号：US20230236460A1
公开(公告)日：2023-07-27
申请号：US18129749
申请日：2023-03-31
发明人： Jinshuai DUAN , Xiaojuan WU , Hongliang YUAN , Wei ZHAO , Yao BI , Jiaxing WANG , Hao YAN , Li TIAN , Liping LEI
IPC分类号： G02F1/1339 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/13394 , G02F1/13398 , G02F1/133345 , G02F1/13439 , G02F1/134309 , G02F1/136286
摘要： A liquid crystal display panel is provided. The liquid crystal display panel includes: a first substrate and a second substrate arranged opposite to each other, and a liquid crystal layer and a plurality of strip-shaped spacers disposed between the first substrate and the second substrate. In the liquid crystal display panel, there is an overlapping area between an orthographic projection of a first signal line on a target base and an orthographic projection of a second signal line on the target base, and an orthographic projection of the strip-shaped spacer on the target base is not overlapped with the overlapping area.
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公开(公告)号：US20220276768A1
公开(公告)日：2022-09-01
申请号：US17452947
申请日：2021-10-29
发明人： Liping LEI , Changcheng LIU , Wenchu DONG , Lirong XU , Honglei ZHANG
IPC分类号： G06F3/0484 , G06F40/169
摘要： The present disclosure provides a screenshot method for an information interaction interface, including: detecting a screenshot operation; acquiring information corresponding to the information interaction interface in response to the screenshot operation, wherein the information corresponding to the information interaction interface includes at least one piece of display information currently displayed in the information interaction interface; displaying an editing interface including at least one piece of editable information, wherein each piece of editable information corresponds to one piece of display information; and editing display content of the editing interface in response to an operation on the editing interface to generate a final display picture including at least the edited display content. In addition, the present disclosure also provides a screenshot apparatus for an information interaction interface, a computing device, and a computer-readable storage medium.
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公开(公告)号：US20220011909A1
公开(公告)日：2022-01-13
申请号：US17213372
申请日：2021-03-26
发明人： Huiguang MA , Liping LEI , Yonggui YANG , Hao FANG
IPC分类号： G06F3/0482 , G06F3/0488 , H04L29/08
摘要： The present disclosure provides a device and method of intelligent interaction, and a storage medium. The device includes a touch-sensitive display, and a processor coupled to the touch-sensitive display and configured to: display an on-top floating window on the touch-sensitive display, wherein the on-top floating window is a first-level menu; display a second-level menu of the on-top floating window upon receiving a media file transfer message from a network side, wherein the second-level menu includes a cancel icon that is configured to stop downloading a media file or stop pushing a downloaded media file; and stop downloading the media file or stop pushing the downloaded media file in response to a user triggering the cancel icon through the touch-sensitive display.
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公开(公告)号：US20240332425A1
公开(公告)日：2024-10-03
申请号：US18028009
申请日：2022-03-30
发明人： Jiayu HE , Fangqing WEN , Ce NING , Hehe HU , Nianqi YAO , Kun ZHAO , Zhengliang LI , Jie HUANG , Feifei LI , Yan QU , Liping LEI
IPC分类号： H01L29/786 , H01L25/07
CPC分类号： H01L29/7869 , H01L25/074
摘要： The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.
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公开(公告)号：US20240304698A1
公开(公告)日：2024-09-12
申请号：US18028114
申请日：2022-03-30
发明人： Jiayu HE , Yan QU , Liping LEI , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI
IPC分类号： H01L29/49 , G02F1/1368 , H01L27/12 , H01L29/786
CPC分类号： H01L29/4908 , G02F1/1368 , H01L27/1225 , H01L29/7869 , H01L29/78696
摘要： There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.
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公开(公告)号：US20240297255A1
公开(公告)日：2024-09-05
申请号：US17919301
申请日：2021-11-29
发明人： Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Jiayu HE , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/66969
摘要： The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.
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公开(公告)号：US20240250178A1
公开(公告)日：2024-07-25
申请号：US18017649
申请日：2022-02-17
发明人： Jiayu HE , Kun ZHAO , Yan QU , Liping LEI , Ce NING , Zhengliang LI , Hehe HU
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225
摘要： The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.
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