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    THIN FILM TRANSISTOR AND ARRAY SUBSTRATE
    3.
    发明公开
    THIN FILM TRANSISTOR AND ARRAY SUBSTRATE 审中-公开

    公开(公告)号：US20230178562A1

    公开(公告)日：2023-06-08

    申请号：US18103355

    申请日：2023-01-30

    申请人： BOE TECHNOLOGY GROUP CO., LTD.

    发明人： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Shuilang DONG ,  Wenhua WANG ,  Nianqi YAO

    IPC分类号： H01L27/12

    CPC分类号： H01L27/1225

    摘要： A thin film transistor includes an active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the active layer perpendicular to a thickness direction of the active layer, and is in contact with the active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material. A porosity of the first loose layer is different from a porosity of the first oxygen release layer, and/or an oxygen content of the first loose layer is different from an oxygen content of the first oxygen release layer.

    THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL
    4.
    发明申请
    THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL 有权

    公开(公告)号：US20230036385A1

    公开(公告)日：2023-02-02

    申请号：US17772689

    申请日：2021-06-24

    申请人： BOE Technology Group Co., Ltd.

    发明人： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Xue LIU ,  Zhi WANG ,  Feng GUAN

    IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/66

    摘要： The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

    THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY SUBSTRATE
    8.
    发明公开
    THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY SUBSTRATE 审中-公开

    公开(公告)号：US20240204004A1

    公开(公告)日：2024-06-20

    申请号：US17910133

    申请日：2021-12-27

    申请人： BOE Technology Group Co., Ltd.

    发明人： Hehe HU ,  Yan QU ,  Jiayu HE ,  Kun ZHAO ,  Jie HUANG ,  Zhengliang LI ,  Ce NING ,  Dongfang WANG ,  Fengjuan LIU ,  Nianqi YAO ,  Feifei LI ,  Shunhang ZHANG ,  Yunsik IM ,  Liping LEI

    IPC分类号： H01L27/12

    CPC分类号： H01L27/124 ,  H01L27/1259 ,  H01L27/1222

    摘要： Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. Specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. According to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.

    SEMICONDUCTOR MATERIAL, LIGHT-EMITTING DEVICE, DISPLAY PANEL AND DISPLAY DEVICE
    10.
    发明公开
    SEMICONDUCTOR MATERIAL, LIGHT-EMITTING DEVICE, DISPLAY PANEL AND DISPLAY DEVICE 审中-公开

    公开(公告)号：US20240128327A1

    公开(公告)日：2024-04-18

    申请号：US18016899

    申请日：2022-02-17

    申请人： BOE TECHNOLOGY GROUP CO., LTD.

    发明人： Guangcai YUAN ,  Hehe HU ,  Fengjuan LIU ,  Ce NING ,  Zhengliang LI

    IPC分类号： H01L29/24 ,  H01L29/786

    CPC分类号： H01L29/24 ,  H01L29/7869

    摘要： The present disclosure has disclosed a semiconductor material, light-emitting device, display panel and display device. The semiconductor material comprises: at least two of an oxide of a first element, an oxide of a second element, an oxide of a third element, an oxide of a fourth element and a compound of fifth element, and comprises at least the oxide of the first element and the compound of the fifth element; the first element comprises at least one of In, Zn, Sn, Cd, Tl and Pb; the second element comprises at least one of Ta, Ga, W, Ba, V, Hf and Nb; the third element comprises at least one of Sn, Zr, Cr and Si; the fourth element comprises at least one of Zn, Al, Sn, Ta, Hf, Zr and Ti; and the compound of the fifth element comprises MxA.