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公开(公告)号：US20240274674A1
公开(公告)日：2024-08-15
申请号：US18021778
申请日：2022-03-31
发明人： Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Niangi YAO , Kun ZHAO , Feifei LI
IPC分类号： H01L29/417 , H01L29/423
CPC分类号： H01L29/41733 , H01L29/42384
摘要： Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.
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公开(公告)号：US20220223773A1
公开(公告)日：2022-07-14
申请号：US17465689
申请日：2021-09-02
发明人： Song LIU , Zhengliang LI , Kun ZHAO , Feifei LI , Qi QI
IPC分类号： H01L33/62 , H01L25/075 , H01L33/56
摘要： Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.
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公开(公告)号：US20240234532A1
公开(公告)日：2024-07-11
申请号：US17925222
申请日：2021-12-27
发明人： Hehe HU , Dongfang WANG , Fengjuan LIU , Ce NING , Zhengliang LI , Jiayu HE , Yan QU , Kun ZHAO , Jie HUANG , Liping LEI , Yunsik IM , Shunhang ZHANG , Nianqi YAO , Feifei LI
IPC分类号： H01L29/43 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号： H01L29/435 , H01L27/1214 , H01L29/41733 , H01L29/66742
摘要： The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.
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公开(公告)号：US20240332425A1
公开(公告)日：2024-10-03
申请号：US18028009
申请日：2022-03-30
发明人： Jiayu HE , Fangqing WEN , Ce NING , Hehe HU , Nianqi YAO , Kun ZHAO , Zhengliang LI , Jie HUANG , Feifei LI , Yan QU , Liping LEI
IPC分类号： H01L29/786 , H01L25/07
CPC分类号： H01L29/7869 , H01L25/074
摘要： The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.
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公开(公告)号：US20240304698A1
公开(公告)日：2024-09-12
申请号：US18028114
申请日：2022-03-30
发明人： Jiayu HE , Yan QU , Liping LEI , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI
IPC分类号： H01L29/49 , G02F1/1368 , H01L27/12 , H01L29/786
CPC分类号： H01L29/4908 , G02F1/1368 , H01L27/1225 , H01L29/7869 , H01L29/78696
摘要： There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.
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公开(公告)号：US20240297255A1
公开(公告)日：2024-09-05
申请号：US17919301
申请日：2021-11-29
发明人： Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Jiayu HE , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/66969
摘要： The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.
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7.发明公开公开(公告)号：US20240355978A1
公开(公告)日：2024-10-24
申请号：US18254210
申请日：2022-04-21
发明人： Nianqi YAO , Zhongpeng TIAN , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Jiayu HE , Feifei LI , Kun ZHAO , Yimin CHEN
IPC分类号： H01L33/62 , G02F1/13357 , H05K3/46
CPC分类号： H01L33/62 , G02F1/133603 , H05K3/4688
摘要： A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.
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公开(公告)号：US20240244747A1
公开(公告)日：2024-07-18
申请号：US17927576
申请日：2021-12-31
发明人： Nianqi YAO , Feifei LI , Ce NING , Zhengliang LI , Hehe HU , Jiayu HE , Jie HUANG , Kun ZHAO , Zhanfeng CAO , Ke WANG
IPC分类号： H05K1/11 , H01L23/498 , H01L33/62 , H05K1/09 , H05K1/18
CPC分类号： H05K1/111 , H01L23/49838 , H01L33/62 , H05K1/09 , H05K1/181 , H05K2201/0338 , H05K2201/10106 , H05K2201/10151
摘要： A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.
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公开(公告)号：US20240186330A1
公开(公告)日：2024-06-06
申请号：US17786177
申请日：2021-08-26
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI , Qi QI
IPC分类号： H01L27/12
CPC分类号： H01L27/124
摘要： Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.
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10.发明公开公开(公告)号：US20240297243A1
公开(公告)日：2024-09-05
申请号：US18026833
申请日：2022-05-27
发明人： Jiayu HE , Yan QU , Ce NING , Hehe HU , Zhengliang LI , Nianqi YAO , Jie HUANG , Kun ZHAO , Feifei LI , Liping LEI
IPC分类号： H01L29/739 , H01L27/092 , H01L29/08 , H01L29/165 , H01L29/66 , H01L29/73
CPC分类号： H01L29/7391 , H01L27/092 , H01L29/0847 , H01L29/165 , H01L29/66356 , H01L29/7311
摘要： A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.
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