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公开(公告)号：US20240274674A1
公开(公告)日：2024-08-15
申请号：US18021778
申请日：2022-03-31
发明人： Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Niangi YAO , Kun ZHAO , Feifei LI
IPC分类号： H01L29/417 , H01L29/423
CPC分类号： H01L29/41733 , H01L29/42384
摘要： Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.
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公开(公告)号：US20240222445A1
公开(公告)日：2024-07-04
申请号：US17996260
申请日：2021-11-03
发明人： Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Nianqi YAO , Kun ZHAO , Tianmin ZHOU , Liping LEI
IPC分类号： H01L29/417 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/66742 , H01L29/78645
摘要： A thin film transistor, an array substrate and a manufacturing method of the thin film transistor are provided, the thin film transistor includes a base substrate; and a first active layer, a first insulating layer and a second active layer, which are sequentially arranged on the base substrate, the first active layer is in contact with the second active layer through a first via hole structure located in the first insulating layer, and non-contacted portions of the first active layer and the second active layer are separated by the first insulating layer, the thin film transistor has a plurality of active layer structures, so that the charges are gathered on two surfaces of each of the active layers, and the number of the charges gathered on the surfaces of the active layers is multiplied, and the open state current of the thin film transistor is multiplied.
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公开(公告)号：US20230060645A1
公开(公告)日：2023-03-02
申请号：US17800389
申请日：2021-05-27
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Kun ZHAO , Nianqi YAO
IPC分类号： H01L29/786 , H01L27/12 , H01L29/24 , H01L29/49 , H01L21/02 , H01L21/443 , H01L29/66
摘要： A metal oxide thin film transistor is provided and includes a gate, a gate insulating layer, an active layer and a source-drain metal layer stacked on a side of a backplane, the active layer and the gate are provided on both sides of the gate insulating layer, the source-drain metal layer is provided on a side of the active layer away from the backplane, the active layer includes: a first metal oxide semiconductor layer provided on a side of the gate insulating layer away from the gate; a second metal oxide semiconductor layer provided on a surface of the first metal oxide semiconductor layer away from the gate.
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公开(公告)号：US20220278162A1
公开(公告)日：2022-09-01
申请号：US17410677
申请日：2021-08-24
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO
IPC分类号： H01L27/146 , H01L27/12
摘要： An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.
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公开(公告)号：US20220223773A1
公开(公告)日：2022-07-14
申请号：US17465689
申请日：2021-09-02
发明人： Song LIU , Zhengliang LI , Kun ZHAO , Feifei LI , Qi QI
IPC分类号： H01L33/62 , H01L25/075 , H01L33/56
摘要： Disclosed are a light-emitting substrate and a display device. In the light-emitting substrate, a first pad of a light-emitting area includes a first metal layer located above a base substrate and a second metal layer located on a side, facing away from the base substrate, of the first metal layer. A material of the second metal layer includes copper-nickel-titanium alloy, and a quantity of nickel atoms and/or titanium atoms contained per unit area in a cross section, farther from the base substrate, of the second metal layer is greater than a quantity of nickel atoms and/or titanium atoms contained per unit area in another cross section, closer to the base substrate, of the second metal layer.
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6.发明公开公开(公告)号：US20240355978A1
公开(公告)日：2024-10-24
申请号：US18254210
申请日：2022-04-21
发明人： Nianqi YAO , Zhongpeng TIAN , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Jiayu HE , Feifei LI , Kun ZHAO , Yimin CHEN
IPC分类号： H01L33/62 , G02F1/13357 , H05K3/46
CPC分类号： H01L33/62 , G02F1/133603 , H05K3/4688
摘要： A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.
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公开(公告)号：US20240244747A1
公开(公告)日：2024-07-18
申请号：US17927576
申请日：2021-12-31
发明人： Nianqi YAO , Feifei LI , Ce NING , Zhengliang LI , Hehe HU , Jiayu HE , Jie HUANG , Kun ZHAO , Zhanfeng CAO , Ke WANG
IPC分类号： H05K1/11 , H01L23/498 , H01L33/62 , H05K1/09 , H05K1/18
CPC分类号： H05K1/111 , H01L23/49838 , H01L33/62 , H05K1/09 , H05K1/181 , H05K2201/0338 , H05K2201/10106 , H05K2201/10151
摘要： A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.
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公开(公告)号：US20240186330A1
公开(公告)日：2024-06-06
申请号：US17786177
申请日：2021-08-26
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI , Qi QI
IPC分类号： H01L27/12
CPC分类号： H01L27/124
摘要： Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.
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公开(公告)号：US20240234532A1
公开(公告)日：2024-07-11
申请号：US17925222
申请日：2021-12-27
发明人： Hehe HU , Dongfang WANG , Fengjuan LIU , Ce NING , Zhengliang LI , Jiayu HE , Yan QU , Kun ZHAO , Jie HUANG , Liping LEI , Yunsik IM , Shunhang ZHANG , Nianqi YAO , Feifei LI
IPC分类号： H01L29/43 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号： H01L29/435 , H01L27/1214 , H01L29/41733 , H01L29/66742
摘要： The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.
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公开(公告)号：US20230036385A1
公开(公告)日：2023-02-02
申请号：US17772689
申请日：2021-06-24
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Xue LIU , Zhi WANG , Feng GUAN
IPC分类号： H01L29/786 , H01L29/06 , H01L29/66
摘要： The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.
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