公开(公告)号：US20240234532A1

公开(公告)日：2024-07-11

申请号：US17925222

申请日：2021-12-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hehe HU ,  Dongfang WANG ,  Fengjuan LIU ,  Ce NING ,  Zhengliang LI ,  Jiayu HE ,  Yan QU ,  Kun ZHAO ,  Jie HUANG ,  Liping LEI ,  Yunsik IM ,  Shunhang ZHANG ,  Nianqi YAO ,  Feifei LI

IPC: H01L29/43 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/435 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/66742

Abstract: The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

公开(公告)号：US20230036385A1

公开(公告)日：2023-02-02

申请号：US17772689

申请日：2021-06-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Xue LIU ,  Zhi WANG ,  Feng GUAN

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/66

Abstract: The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

公开(公告)号：US20250031447A1

公开(公告)日：2025-01-23

申请号：US18279205

申请日：2022-10-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zhengliang LI ,  Guangcai YUAN ,  Ce NING ,  Zhonghao HUANG ,  Zhixiang ZOU ,  Zhangtao WANG ,  Jie HUANG ,  Nianqi YAO ,  Jiayu HE ,  Hehe HU ,  Feifei LI ,  Kun ZHAO ,  Chen XU ,  Hui GUO

IPC: H01L27/12 ,  H01L23/00

Abstract: A display substrate, including: a base substrate; and a metal conductive layer, located at a side of the base substrate, and including a core conductive layer and a functional conductive layer laminated along a direction away from the base substrate; a material of the core conductive layer includes a conductive metal material; a material of the functional conductive layer includes a first diffusion barrier metal material and a first adhesion force enhancing metal material, wherein the first diffusion barrier metal material is configured to block diffusion of the conductive metal material, and the first adhesion force enhancing metal material is configured to enhance an adhesion force between the functional conductive layer and a photoresist used in a patterning process of the functional conductive layer; a surface energy of any of first adhesion force enhancing metal materials is less than or equal to 325 mJ/m2.

公开(公告)号：US20240334762A1

公开(公告)日：2024-10-03

申请号：US18741629

申请日：2024-06-12

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Xue LIU

IPC: H10K59/13 ,  H10K59/12 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00

CPC classification number: H10K59/13 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K59/1201

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

公开(公告)号：US20230060645A1

公开(公告)日：2023-03-02

申请号：US17800389

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Kun ZHAO ,  Nianqi YAO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49 ,  H01L21/02 ,  H01L21/443 ,  H01L29/66

Abstract: A metal oxide thin film transistor is provided and includes a gate, a gate insulating layer, an active layer and a source-drain metal layer stacked on a side of a backplane, the active layer and the gate are provided on both sides of the gate insulating layer, the source-drain metal layer is provided on a side of the active layer away from the backplane, the active layer includes: a first metal oxide semiconductor layer provided on a side of the gate insulating layer away from the gate; a second metal oxide semiconductor layer provided on a surface of the first metal oxide semiconductor layer away from the gate.

公开(公告)号：US20220352283A1

公开(公告)日：2022-11-03

申请号：US17429935

申请日：2020-11-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Xue LIU

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.

公开(公告)号：US20220278162A1

公开(公告)日：2022-09-01

申请号：US17410677

申请日：2021-08-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO

IPC: H01L27/146 ,  H01L27/12

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20220186359A1

公开(公告)日：2022-06-16

申请号：US17485170

申请日：2021-09-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi YAO ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Dapeng XUE ,  Lizhong WANG ,  Shuilang DONG ,  Jie HUANG ,  Jiayu HE ,  Lubin SHI ,  Yancai LI

IPC: C23C14/50

Abstract: A fixture, a tray and a sputtering system. The fixture is internally provided with a support structure and a clamping structure connected with each other, wherein the clamping structure is configured to clamp a to-be-sputtered substrate; an orthographic projection of the clamping structure on a plane where the support structure is located and the support structure share an superimposed area and are separate in non-superimposed areas; wherein the support structure located in the non-superimposed area and/or the clamping structure located in the non-superimposed area has a first hollowed structure. The fixture is internally provided with the first hollowed structure, such that a part of an area of the to-be-sputtered substrate covered by the fixture may be exposed via the first hollowed structure when the fixture holds the to-be-sputtered substrate, so as to reduce the area of the to-be-sputtered substrate covered by the fixture.

公开(公告)号：US20240332425A1

公开(公告)日：2024-10-03

申请号：US18028009

申请日：2022-03-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Fangqing WEN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Zhengliang LI ,  Jie HUANG ,  Feifei LI ,  Yan QU ,  Liping LEI

IPC: H01L29/786 ,  H01L25/07

CPC classification number: H01L29/7869 ,  H01L25/074

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

公开(公告)号：US20240304698A1

公开(公告)日：2024-09-12

申请号：US18028114

申请日：2022-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI

IPC: H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/4908 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.