LED DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY PANEL

    公开(公告)号:US20220393087A1

    公开(公告)日:2022-12-08

    申请号:US17775959

    申请日:2021-05-20

    IPC分类号: H01L33/62 H01L33/00 H01L33/44

    摘要: The present disclosure provides a display substrate, including: a base substrate including a display area and a bonding area; a first metal conductive layer pattern on the base substrate; a first passivation layer on the first metal conductive layer pattern; a second metal conductive layer pattern on the first passivation layer; a second passivation layer on the second metal conductive layer pattern; a first blackening layer pattern is disposed between the first metal conductive layer pattern and the first passivation layer, an orthographic projection of which on the base substrate is located in that of the first metal conductive layer pattern on the base substrate; and/or a second blackening layer pattern is disposed between the second metal conductive layer pattern and the second passivation layer, an orthographic projection of which on the base substrate is located in that of the second metal conductive layer pattern on the base substrate.

    TOUCH SUBSTRATE AND TOUCH DEVICE
    3.
    发明申请

    公开(公告)号:US20220397998A1

    公开(公告)日:2022-12-15

    申请号:US17771916

    申请日:2021-07-12

    IPC分类号: G06F3/041

    摘要: A touch substrate includes: a substrate, which includes a touch area and a bonding area on one side of the touch area; and a plurality of pads on the substrate, wherein the plurality of pads are arranged in the bonding area at intervals, wherein the pad includes a first metal layer, a first organic layer and a second metal layer, arranged in this order on the substrate, a first via is formed in the first metal layer, a second via is formed in the first organic layer, an orthographic projection of the first via on the substrate and an orthographic projection of the second via on the substrate do not overlap, a part of the first organic layer is in the first via, and a part of the second metal layer is in contact with the first metal layer through the second via.