公开(公告)号：US20120261608A1

公开(公告)日：2012-10-18

申请号：US13516524

申请日：2010-12-14

申请人： Akira Hosomi ,  Kensuke Ohmae

发明人： Akira Hosomi ,  Kensuke Ohmae

IPC分类号： H01L21/28 ,  C09K13/00

CPC分类号： H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/44 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/01022 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.2 to 6; and a method for manufacturing a semiconductor device using such an etchant.

摘要翻译： 公开了一种蚀刻剂，其用于具有电极的半导体衬底的再分配，并且能够在不蚀刻镍的情况下选择性地蚀刻铜; 以及使用该半导体器件的半导体器件的制造方法。 具体公开的是用于半导体衬底的再分配并含有过氧化氢和柠檬酸并且具有0.75至12质量％的过氧化氢含量和1至20％的柠檬酸含量的蚀刻剂，通过 质量，过氧化氢和柠檬酸的摩尔比在0.3至5的范围内; 用于选择性蚀刻铜的蚀刻剂，其用于半导体衬底的再分配并且含有过氧化氢和苹果酸，并且具有0.75至12质量％的过氧化氢含量和1.5至25的苹果酸含量 质量％，过氧化氢和苹果酸的摩尔比在0.2〜6的范围内; 以及使用这种蚀刻剂制造半导体器件的方法。

公开(公告)号：US08900478B2

公开(公告)日：2014-12-02

申请号：US13516524

申请日：2010-12-14

申请人： Akira Hosomi ,  Kensuke Ohmae

发明人： Akira Hosomi ,  Kensuke Ohmae

IPC分类号： C09K13/00 ,  H01L23/00 ,  C23F1/02 ,  C23F1/18 ,  H01L21/3213 ,  H01L23/31 ,  H01L23/525

CPC分类号： H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/44 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/01022 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.2 to 6; and a method for manufacturing a semiconductor device using such an etchant.

摘要翻译： 公开了一种蚀刻剂，其用于具有电极的半导体衬底的再分配，并且能够在不蚀刻镍的情况下选择性地蚀刻铜; 以及使用该半导体器件的半导体器件的制造方法。 具体公开的是用于半导体衬底的再分配并含有过氧化氢和柠檬酸并且具有0.75至12质量％的过氧化氢含量和1至20％的柠檬酸含量的蚀刻剂，通过 质量，过氧化氢和柠檬酸的摩尔比在0.3至5的范围内; 用于选择性蚀刻铜的蚀刻剂，其用于半导体衬底的再分配并且含有过氧化氢和苹果酸，并且具有0.75至12质量％的过氧化氢含量和1.5至25的苹果酸含量 质量％，过氧化氢和苹果酸的摩尔比在0.2〜6的范围内; 以及使用这种蚀刻剂制造半导体器件的方法。

公开(公告)号：US4973705A

公开(公告)日：1990-11-27

申请号：US242994

申请日：1988-09-09

申请人： Akira Hosomi

发明人： Akira Hosomi

IPC分类号： C07D327/04 ,  C07D411/04 ,  C07D497/10

CPC分类号： C07D411/04 ,  C07D327/04 ,  C07D497/10

摘要： A method for preparation of 1,3-oxathiolanes is described. The method comprises reacting, in a solvent, a fluoride ion source, a carbonyl compound, and a halomethyl trimethylsilylmethyl sulfide, wherein the halomethyl trimethylsilyl methyl sulfide is selected from a group consisting of chloromethyl trimethylsilylmethyl sulfide, bromomethyl trimethylsilylmethyl sulfide, or iodomethyl trimethylsilylmethyl sulfide.

公开(公告)号：US20050061202A1

公开(公告)日：2005-03-24

申请号：US10481018

申请日：2002-06-18

申请人： Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

发明人： Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

IPC分类号： C23C22/52 ,  C23F1/18 ,  H05K3/26 ,  H05K3/38 ,  C09D11/00

CPC分类号： C23F1/18 ,  C23C22/52 ,  H05K3/383 ,  H05K2203/124

摘要： The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in electronics industry. The surface treatment agent roughens the surface of copper and copper alloys. Particularly, the surface treatment agent can form a uniform and undulation-free roughened surface on copper-clad substrates having plated mirror surface, this having been difficult in conventional techniques, thereby significantly improving the adhesion to etching resists, solder resists, in addition, to prepregs and a resin for mounting electronic parts.

摘要翻译： 铜和铜合金表面处理剂含有过氧化氢，无机酸，唑类化合物，银离子和卤离子。 铜和铜合金表面处理剂可用于电子工业印刷线路板的生产。 表面处理剂使铜和铜合金的表面变粗糙。 特别地，表面处理剂可以在具有电镀镜面的铜包覆基板上形成均匀且无起伏的粗糙表面，这在常规技术中是困难的，从而显着提高与抗蚀剂，阻焊剂的粘附性，另外， 预浸料和用于安装电子部件的树脂。

公开(公告)号：US4946955A

公开(公告)日：1990-08-07

申请号：US242470

申请日：1988-09-09

申请人： Akira Hosomi

发明人： Akira Hosomi

IPC分类号： C07D513/04

CPC分类号： C07D513/04

摘要： A method for preparation of polycyclic 1,3-thiazolidines is described. The method comprises reacting a fluoride ion source, in a solvent, with an onium salt synthesized by the reaction of a nitrogenous heteroaromatic compound with a halomethyl trimethylsilylmethyl sulfide, the halomethyl trimethylsilylmethyl sulfide being selected from the group consisting of chloromethyl trimethylsilylmethyl sulfide, bromomethyl trimethylsilylmethyl sulfide, or iodomethyl trimethylsilylmethyl sulfide.

公开(公告)号：US09177827B2

公开(公告)日：2015-11-03

申请号：US13518714

申请日：2010-12-24

申请人： Akira Hosomi

发明人： Akira Hosomi

IPC分类号： H01L21/00 ,  H01L21/3213 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/00 ,  H01L23/525

CPC分类号： H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： Disclosed are an etchant which is used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel, and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant to be used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode, including hydrogen peroxide, an organic acid, and an organic phosphonic acid, wherein the organic acid is at least one member selected from citric acid and malic acid; a content of hydrogen peroxide is from 0.75 to 12% by mass; a content of the organic acid is from 0.75 to 25% by mass; and a content of the organic phosphonic acid is from 0.0005 to 1% by mass, and a method for manufacturing a semiconductor device using the etchant.

摘要翻译： 公开了一种蚀刻剂，其用于制造使用具有电极的半导体衬底并且能够在不蚀刻镍的情况下选择性地蚀刻铜的半导体器件，以及使用该蚀刻剂的半导体器件的制造方法。 具体公开的是用于制造使用具有包括过氧化氢，有机酸和有机膦酸的电极的半导体衬底的半导体器件的蚀刻剂，其中有机酸是选自柠檬酸中的至少一种 和苹果酸; 过氧化氢的含量为0.75〜12质量％ 有机酸的含量为0.75〜25质量％ 有机膦酸的含量为0.0005〜1质量％，以及使用该蚀刻剂的半导体装置的制造方法。

公开(公告)号：US20120270396A1

公开(公告)日：2012-10-25

申请号：US13518714

申请日：2010-12-24

申请人： Akira Hosomi

发明人： Akira Hosomi

IPC分类号： H01L21/306 ,  C09K13/00 ,  H01L21/283

CPC分类号： H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： Disclosed are an etchant which is used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel, and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant to be used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode, including hydrogen peroxide, an organic acid, and an organic phosphonic acid, wherein the organic acid is at least one member selected from citric acid and malic acid; a content of hydrogen peroxide is from 0.75 to 12% by mass; a content of the organic acid is from 0.75 to 25% by mass; and a content of the organic phosphonic acid is from 0.0005 to 1% by mass, and a method for manufacturing a semiconductor device using the etchant.

摘要翻译： 公开了一种蚀刻剂，其用于制造使用具有电极的半导体衬底并且能够在不蚀刻镍的情况下选择性地蚀刻铜的半导体器件，以及使用该蚀刻剂的半导体器件的制造方法。 具体公开的是用于制造使用具有包括过氧化氢，有机酸和有机膦酸的电极的半导体衬底的半导体器件的蚀刻剂，其中有机酸是选自柠檬酸中的至少一种 和苹果酸; 过氧化氢的含量为0.75〜12质量％ 有机酸的含量为0.75〜25质量％ 有机膦酸的含量为0.0005〜1质量％，以及使用该蚀刻剂的半导体装置的制造方法。

公开(公告)号：US5328894A

公开(公告)日：1994-07-12

申请号：US846177

申请日：1992-03-05

申请人： Hidechika Wakabayashi ,  Yasuo Sugihara ,  Akira Hosomi ,  Futoshi Nakaya

发明人： Hidechika Wakabayashi ,  Yasuo Sugihara ,  Akira Hosomi ,  Futoshi Nakaya

IPC分类号： A23L3/3436 ,  A23L3/349 ,  A23L3/3544 ,  B01J20/02 ,  B01J20/22 ,  A23B4/00

CPC分类号： A23L3/3436 ,  A23L3/3544

摘要： A food-preserving agent comprising an oxygen absorbent and a compound represented by the following structural formula (I): ##STR1## , wherein n is an integer of 2 to 4 and X is H or CH.sub.3, can remove generated acetaldehyde effective, thereby preserving food without any fear of disagreeable odor for a long duration.

摘要翻译： 包含氧吸收剂和由以下结构式（I）表示的化合物的食品防腐剂：其中n为2至4的整数，X为H或CH 3，可以除去生成的乙醛有效 ，从而保持食物，而不会长时间不怕令人不愉快的气味。

公开(公告)号：US07232528B2

公开(公告)日：2007-06-19

申请号：US10481018

申请日：2002-06-18

申请人： Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

发明人： Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

IPC分类号： H01L21/302

CPC分类号： C23F1/18 ,  C23C22/52 ,  H05K3/383 ,  H05K2203/124

摘要： The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in electronics industry. The surface treatment agent roughens the surface of copper and copper alloys. Particularly, the surface treatment agent can form a uniform and undulation-free roughened surface on copper-clad substrates having plated mirror surface, this having been difficult in conventional techniques, thereby significantly improving the adhesion to etching resists, solder resists, in addition, to prepregs and a resin for mounting electronic parts.

摘要翻译： 铜和铜合金表面处理剂含有过氧化氢，无机酸，唑类化合物，银离子和卤离子。 铜和铜合金表面处理剂可用于电子工业印刷线路板的生产。 表面处理剂使铜和铜合金的表面变粗糙。 特别地，表面处理剂可以在具有电镀镜面的铜包覆基板上形成均匀且无起伏的粗糙表面，这在常规技术中是困难的，从而显着提高与抗蚀剂，阻焊剂的粘附性，另外， 预浸料和用于安装电子部件的树脂。

公开(公告)号：US5805361A

公开(公告)日：1998-09-08

申请号：US679893

申请日：1996-07-15

申请人： Akira Morimoto ,  Yoshiyuki Shimizu ,  Akira Hosomi

发明人： Akira Morimoto ,  Yoshiyuki Shimizu ,  Akira Hosomi

IPC分类号： G02B3/00 ,  B29C43/02 ,  B29C43/36 ,  C03B11/00 ,  C03B11/08 ,  G02B5/18 ,  G02B7/02 ,  G03B9/00

CPC分类号： G02B5/1857 ,  C03B11/082 ,  B29C2043/3618 ,  B29C43/021 ,  B29C43/361 ,  B29L2011/0016 ,  C03B2215/412 ,  C03B2215/72

摘要： In the process of press molding an optical element having an optical functioning face having a grating which is rotationally asymmetric, both ends of an molding face of an lower press die are cut off to form inclined faces. During a press molding, glass material filled in the cuttings presses the inclined faces so that the rotation of a lower press die in an barrel die around an axis is prevented. In addition, the part filled in the cuttings is used as the reference point to mount on an optical apparatus. As a result, the rotation of the press dies is prevented, and the placement of the rotationally asymmetric optical functioning face is avoided. Therefore, the direction for mounting the optical element on an optical apparatus can be easily decided.

摘要翻译： 在具有旋光不对称的光栅的具有光学功能面的光学元件的压制成型过程中，切割下压模的成形面的两端，形成倾斜面。 在压制成形时，填充在切割中的玻璃材料挤压倾斜面，从而防止了在筒体内的下压模的旋转绕轴。 此外，将填充在切屑中的部分用作安装在光学装置上的参考点。 结果，防止了压模的旋转，并且避免了旋转不对称的光学功能面的放置。 因此，可以容易地确定将光学元件安装在光学装置上的方向。