公开(公告)号：US20230064183A1

公开(公告)日：2023-03-02

申请号：US17897375

申请日：2022-08-29

申请人： Applied Materials, Inc.

发明人： Suketu Arun Parikh ,  Ashish Pal ,  El Mehdi Bazizi ,  Andrew Yeoh ,  Nitin K. Ingle ,  Arvind Sundarrajan ,  Guan Huei See ,  Martinus Maria Berkens ,  Sameer A. Deshpande ,  Balasubramanian Pranatharthiharan ,  Yen-Chu Yang

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L29/786 ,  H01L29/423

摘要： Semiconductor devices and methods of manufacturing the same are described. The method includes front side processing to form a deep source/drain cavity and filling the cavity with a sacrificial material. The sacrificial material is then removed during processing of the backside to form a backside power rail via that is filled with a metal fill.

公开(公告)号：US11421316B2

公开(公告)日：2022-08-23

申请号：US16584695

申请日：2019-09-26

申请人： APPLIED MATERIALS, INC.

发明人： Prayudi Lianto ,  Mohamed Rafi ,  Muhammad Azim Bin Syed Sulaiman ,  Guan Huei See ,  Ang Yu Xin Kristy ,  Karthik Elumalai ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan

IPC分类号： H01L23/48 ,  H01L23/52 ,  C23C14/54 ,  H01L21/67 ,  H01L23/00

摘要： Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 μm l/s fine pitch patterning.

公开(公告)号：US11309278B2

公开(公告)日：2022-04-19

申请号：US16520680

申请日：2019-07-24

申请人： APPLIED MATERIALS, INC.

发明人： Prayudi Lianto ,  Guan Huei See ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan ,  Xundong Dai ,  Peter Khai Mum Fung

IPC分类号： G11C16/04 ,  H01L23/00 ,  B23K101/40 ,  B23K20/02

摘要： Methods for bonding substrates used, for example, in substrate-level packaging, are provided herein. In some embodiments, a method for bonding substrates includes: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate, performing chemical mechanical polishing (CMP) on the first substrate and the second substrate to form a bonding interface on each of the first substrate and the second substrate, positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate, and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate.

公开(公告)号：US10319601B2

公开(公告)日：2019-06-11

申请号：US15467866

申请日：2017-03-23

申请人： Applied Materials, Inc.

发明人： Ranga Rao Arnepalli ,  Prerna Goradia ,  Prayudi Lianto ,  Jie Zeng ,  Arvind Sundarrajan ,  Robert Jan Visser ,  Guan Huei See

IPC分类号： H01L21/3105 ,  H01L21/3205 ,  C09G1/02 ,  C09K3/14 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K13/06 ,  B24B1/00 ,  B24B37/04 ,  H01L21/306

摘要： A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

公开(公告)号：US10276424B2

公开(公告)日：2019-04-30

申请号：US15638798

申请日：2017-06-30

申请人： APPLIED MATERIALS, INC.

发明人： Guan Huei See ,  Yu Gu ,  Arvind Sundarrajan

IPC分类号： H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31

摘要： Methods and apparatus for wafer level packaging are described herein. According to one embodiment, a method comprises depositing an adhesive layer atop a carrier, placing at least a portion of a substrate pre-fabricated with a plurality of die cavities and a plurality of through vias atop the laminate, inserting a die into each of the die cavities, encapsulating the die and the substrate and debonding and removing the laminate and the carrier from the encapsulated die and substrate. Another embodiment provides an apparatus comprising a substrate, a plurality of die cavities formed through the substrate and a plurality of conductive through vias disposed through the substrate and arranged about the perimeter of each die cavity, wherein a top surface of the substrate is exposed for application of an encapsulating layer and a bottom surface of the substrate is exposed for placement on an adhesive layer.

公开(公告)号：US20190051596A1

公开(公告)日：2019-02-14

申请号：US15673478

申请日：2017-08-10

申请人： APPLIED MATERIALS, INC.

发明人： Peng Suo ,  Yu Gu ,  Guan Huei See ,  Arvind Sundarajan

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L21/027 ,  H01L21/02 ,  H01L21/283 ,  H01L23/528 ,  H01L21/3105 ,  H01L49/02

摘要： Methods of processing a substrate include providing a substrate having a polymer dielectric layer and a metal layer formed atop the polymer dielectric layer; depositing a plurality of polymer layers atop the substrate; patterning the plurality of polymer layers to form at least one via that extends from a top surface of an uppermost polymer layer to a top surface of the metal layer; and forming a three-dimensional metal-insulator-metal (3D MIM) capacitance stack in the at least one via and over a portion of the metal layer and the plurality of polymer layers.

公开(公告)号：US12051653B2

公开(公告)日：2024-07-30

申请号：US17872731

申请日：2022-07-25

申请人： Applied Materials, Inc.

发明人： Guan Huei See ,  Ramesh Chidambaram

IPC分类号： H01L23/538 ,  H01L21/48 ,  H01L21/50 ,  H01L21/768 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L23/66 ,  H01L25/065 ,  H01L25/10 ,  H01L27/06 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/60

CPC分类号： H01L23/5389 ,  H01L21/486 ,  H01L21/4864 ,  H01L21/50 ,  H01L21/76802 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/66 ,  H01L25/0657 ,  H01L25/105 ,  H01L27/0688 ,  H01Q1/2283 ,  H01Q1/243 ,  H05K1/0243 ,  H01L2021/60007 ,  H01L2225/1035 ,  H01L2225/107

摘要： The present disclosure relates to methods and apparatus for forming thin-form-factor reconstituted substrates and semiconductor device packages for radio frequency applications. The substrate and package structures described herein may be utilized in high-density 2D and 3D integrated devices for 4G, 5G, 6G, and other wireless network systems. In one embodiment, a silicon substrate is structured by laser ablation to include cavities for placement of semiconductor dies and vias for deposition of conductive interconnections. Additionally, one or more cavities are structured to be filled or occupied with a flowable dielectric material. Integration of one or more radio frequency components adjacent the dielectric-filled cavities enables improved performance of the radio frequency elements with reduced signal loss caused by the silicon substrate.

公开(公告)号：US12020992B2

公开(公告)日：2024-06-25

申请号：US17584669

申请日：2022-01-26

申请人： Applied Materials, Inc. ,  NATIONAL UNIVERSITY OF SINGAPORE

发明人： Prayudi Lianto ,  Guan Huei See ,  Arvind Sundarrajan ,  Muhammad Avicenna Naradipa ,  Andrivo Rusydi

IPC分类号： H01L21/66 ,  G01N13/00 ,  H01L23/00

CPC分类号： H01L22/12 ,  G01N13/00 ,  H01L24/80 ,  H01L2224/80895 ,  H01L2224/80896

摘要： Methods and apparatus for processing a first substrate and a second substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate, which is different than the first substrate, determining in-situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate, measuring a change of phase and amplitude in determined in-situ ESE data, and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from the measured change of phase and amplitude in the in-situ ESE data.

公开(公告)号：US11837464B2

公开(公告)日：2023-12-05

申请号：US17569629

申请日：2022-01-06

申请人： Applied Materials, Inc.

发明人： Ying Wang ,  Guan Huei See ,  Gregory J. Wilson

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/683 ,  B08B3/02

CPC分类号： H01L21/02076 ,  B08B3/02 ,  H01L21/67051 ,  H01L21/6836

摘要： Methods, systems, and apparatus for cleaning and drying a tape-frame substrate are provided. In embodiments, an apparatus for supporting a tape-frame substrate includes a chuck having a first side and a second side opposite the first side, the first side having a convex surface configured to support the tape-frame substrate; and a plurality of channels extending through the chuck and having outlets along the first side, wherein the plurality of channels are configured to dispense fluid from the outlets along the convex surface of the first side. In embodiments, a support system includes the chuck and a holder configured to mount a tape-frame substrate to the chuck. The plurality of channels are configured to dispense fluid from the outlets and between the tape-frame substrate and the convex surface of the chuck when the tape-frame substrate is mounted to the chuck.

公开(公告)号：US20210233707A1

公开(公告)日：2021-07-29

申请号：US17227332

申请日：2021-04-11

申请人： APPLIED MATERIALS, INC.

发明人： Peng Suo ,  Yu Gu ,  Guan Huei See ,  Arvind Sundarrajan

IPC分类号： H01F41/04 ,  H01F17/00 ,  H01F27/28 ,  H01L21/48 ,  H01L23/498 ,  H01L49/02

摘要： A method of forming a magnetic core on a substrate having a stacked inductor coil includes etching a plurality of polymer layers to form at least one feature through the plurality of polymer layers, wherein the at least one feature is disposed within a central region of a stacked inductor coil formed on the substrate; and depositing a magnetic material within the at least one feature.