Abstract:
A shoe in form of a slipper or sandal, includes a body 100 adapted to have a first fluid casing 12 and a second fluid casing 14, each having an elastic property, embedded in the front and rear portions of the body, respectively, and an instep strap 120 supported to the body in such a way as to be rotated in a specific section. A rotating shaft 16 is rotated in conjunction with the instep strap, and it includes a first connecting portion connected to the first fluid casing and a second connecting portion connected to the second fluid casing and an internal passage having respective check ball seating portions formed on the inside of the first and the second connecting portions, and with check ball received in the internal passage. When the rotating shaft is inclined by rotation of the rotating shaft, the check ball closely adheres to any one of the check ball seating portions by gravity or buoyancy and regulates a fluid flow to any one of the first and the second connecting portions.
Abstract:
Provided is a low iron loss high strength non-oriented electromagnetic steel sheet and a method for manufacturing the same. The method comprises hot-rolling a slab comprising 0.005 weight % or less of C, 4.0 weight % or less of Si, 0.1 weight % or less of P, 0.03 weight % or less of S, 0.1 to 2.0 weight % of Mn, 0.3 to 2.0 weight % of Al, 0.003 weight % or less of N, 0.005 weight % or less of Ti, the remainder being Fe and unavoidable impurities, cold-rolling the slab, and finally annealing the slab such that the fractional area of the non-recrystallization tissue at the cross sectional surface of the steel sheet is 50% or lower (not including 0%).
Abstract:
A device for clearing pipe blockage includes: pumping means (A) for compressing air by pumping and having an outlet (18) for discharging compressed air out; and an inflatable balloon mounted at the outlet and expanding by air discharged through the outlet. The outlet is a one-way valve, and a cylindrical guide member (24) is formed to surround the outside of the inflatable balloon, guides the inflatable balloon to move forward inside a pipe when a front end part of the guide member is inserted into the pipe, and is made of flexible material. A presser which cleans the inner surface of the pipe while moving in a state where it gets in contact with the inner surface of the pipe is mounted at a front end of the inflatable balloon, and the blocked pipe is cleared by shock pressure by movement of the pumping unit and a change in pressure by expansion of the inflatable balloon by the compressed air.
Abstract:
A transistor of a semiconductor device includes a substrate, a gate over the substrate, a source/drain region formed in the substrate to have a channel region therebetween, and an epitaxial layer formed below the channel region to have a different lattice constant from the substrate. The epitaxial layer having a different lattice constant with a substrate material is formed below the channel region to apply a stress to the channel region. Thus, the mobility of carriers of the transistor increases.
Abstract:
Provided are a non-volatile memory device, an electronic control system, and a method of operating the non-volatile memory device. A non-volatile memory device according to an embodiment of the present invention includes a first NAND cell array including a first group of pages, and a second NAND cell array including a second group of pages. A plurality of X-decoders are at least one-to-one connected to the first and second NAND cell arrays. A control logic controls the plurality of X-decoders to simultaneously sense data of a first page corresponding to a start address from among the first group of pages, and data of a second page subsequent to the first page from among the second group of pages.
Abstract:
There are provided a device and method for detecting joint parts of a steel strip in an endless hot rolling process. The device for detecting joint parts of a steel strip in an endless hot rolling process includes an image signal collection block receiving image signals, each having information on gray level pixels of a steel strip, from a charge coupled device (CCD) camera; an edge line detection block receiving the image signals from the image signal collection block to detect an edge line of the steel strip; a profile calculation block receiving information on the detection of the edge line from the edge line detection block to calculate the sum of gray levels up to an edge line of the steel strip in a traverse direction of the steel strip when the edge line is detected by the edge line detection block; a joint part judgement block receiving information on the sum of the gray levels, which shows a current profile value, from the profile calculation block to judge the edge line as a joint part when a ratio of a mean value of the current profile and a mean value of the previous profile is less than a predetermined value; and an output block receiving information on the judgement of the edge line as the joint part from the joint part judgement block to output a joint part-detecting signal when the edge line is judged to be a joint part.
Abstract:
Substituted phenylureas and phenylamides, processes for their preparation, pharmaceutical compositions containing these compounds, and the use of these compounds for preparing pharmaceutical compositions.
Abstract:
A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.
Abstract:
A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.
Abstract:
A semiconductor device includes a substrate, a gate formed over the substrate, a gate spacer provided against first and second sidewalls of the gate, and a source/drain region formed in the substrate proximate to the gate spacer. The source/drain region includes first and second epitaxial layers including Ge, wherein the second epitaxial layer which is formed over an interfacial layer between the first epitaxial layer and the substrate has a higher germanium concentration than that of the first epitaxial layer.