公开(公告)号：US07170029B2

公开(公告)日：2007-01-30

申请号：US10902897

申请日：2004-07-29

申请人： Wen Dong Song ,  Minghui Hong ,  Chengwu An ,  Yong Feng Lu

发明人： Wen Dong Song ,  Minghui Hong ,  Chengwu An ,  Yong Feng Lu

IPC分类号： B23K26/00 ,  B23K26/14 ,  B23K26/16 ,  B23K26/18

CPC分类号： B08B7/0042 ,  B23K26/0624 ,  B23K26/351 ,  B23K2101/40 ,  H01L21/67092 ,  H01L21/67144

摘要： This invention relates to a method and apparatus for deflashing integrated circuit (IC) packages by laser irradiation. The method and apparatus include two lasers scanning flash area for performing deflashing operation. CO2 laser is used to remove top layer of flash and YAG laser is used to remove the thin layer of flash remained after CO2 laser deflashing. CO2 laser deflashing and following YAG laser deflashing can effectively remove flash and avoid damage of heat sinks as well as leads and bars in the IC packages.

摘要翻译： 本发明涉及一种通过激光照射对集成电路（IC）封装进行消融的方法和装置。 该方法和装置包括两个激光扫描闪光区域，用于进行去抖动操作。 CO 2激光器用于去除闪光的顶层，并且使用YAG激光器去除CO 2激光束缚后残留的薄层。 CO 2激光束缚和随后的YAG激光束缚可以有效地去除闪光，并避免散热片以及IC封装中的引线和棒的损坏。

公开(公告)号：US06917011B2

公开(公告)日：2005-07-12

申请号：US10193773

申请日：2002-07-10

申请人： Ming Hui Hong ,  Yong Feng Lu ,  Wen Dong Song ,  Zhihong Mai ,  Kok Tong Thiam ,  Chye Eng Soh

发明人： Ming Hui Hong ,  Yong Feng Lu ,  Wen Dong Song ,  Zhihong Mai ,  Kok Tong Thiam ,  Chye Eng Soh

IPC分类号： B23K26/00 ,  B23K26/40 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L24/98 ,  B23K26/361 ,  B23K2101/40 ,  B23K2103/42 ,  B23K2103/50 ,  H01L21/56 ,  H01L24/45 ,  H01L24/799 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/8592 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The invention relates to a method and apparatus for decapping integrated circuit packages. The invention involves irradiating an IC package with laser radiation, typically in the UV-IR spectra and of short pulse duration. The irradiation results in ablation of the molding compound. The invention also provides real-time monitoring and process control of the decapping process and fluid-flow removal of ablation debris. Using the invention, decapping can be performed without causing damage to the internal IC structure. Furthermore, decapping in a liquid can prevent oxidization of the molding compound by ambient air.

摘要翻译： 本发明涉及一种用于对集成电路封装进行去盖的方法和装置。 本发明涉及用激光辐射照射IC封装，通常在UV-IR光谱和短脉冲持续时间内。 照射导致模塑料的烧蚀。 本发明还提供切割过程和消除碎屑的流体流动去除的实时监测和过程控制。 使用本发明，可以进行开盖，而不会损坏内部IC结构。 此外，液体中的开盖可以防止环境空气对模塑料的氧化。

公开(公告)号：US06897118B1

公开(公告)日：2005-05-24

申请号：US10776794

申请日：2004-02-11

申请人： Chyiu-Hyia Poon ,  Byung Jin Cho ,  Yong Feng Lu ,  Alex See ,  Mousumi Bhat

发明人： Chyiu-Hyia Poon ,  Byung Jin Cho ,  Yong Feng Lu ,  Alex See ,  Mousumi Bhat

IPC分类号： H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/823814

摘要： A method for forming a highly activated ultra shallow ion implanted semiconductive elements for use in sub-tenth micron MOSFET technology is described. A key feature of the method is the ability to activate the implanted impurity to a highly active state without permitting the dopant to diffuse further to deepen the junction. A selected single crystalline silicon active region is first amorphized by implanting a heavy ion such as silicon or germanium. A semiconductive impurity for example boron is then implanted and activated by pulsed laser annealing whereby the pulse fluence, frequency, and duration are chosen to maintain the amorphized region just below it's melting temperature. It is found that just below the melting temperature there is sufficient local ion mobility to secure the dopant into active positions within the silicon matrix to achieve a high degree of activation with essentially no change in concentration profile. The selection of the proper laser annealing parameters is optimized by observation of the reduction of sheet resistance and concentration profile as measured on a test site. Application of the method is applied to forming a MOS FET and a CMOS device. The additional processing steps required by the invention are applied simultaneously to both n-channel and p-channel devices of the CMOS device pair.

摘要翻译： 描述了用于形成用于次十分之一米MOSFET技术的高激活超浅离子注入半导体元件的方法。 该方法的关键特征是能够将注入的杂质激活到高活性状态，而不允许掺杂剂进一步扩散以加深该结。 选择的单晶硅有源区域首先通过注入重离子如硅或锗来非晶化。 然后通过脉冲激光退火将诸如硼的半导体杂质注入并激活，由此选择脉冲能量密度，频率和持续时间以将非晶化区域保持在低于其熔融温度。 已经发现，恰好低于熔融温度，存在足够的局部离子迁移率，以将掺杂剂固定在硅基质内的活性位置，以实现高度的活化，基本上没有浓度分布的变化。 通过观察在测试部位测量的薄层电阻和浓度分布的降低来优化选择适当的激光退火参数。 该方法的应用用于形成MOS FET和CMOS器件。 本发明所需的附加处理步骤同时应用于CMOS器件对的n沟道和p沟道器件。

公开(公告)号：US06838637B2

公开(公告)日：2005-01-04

申请号：US10059940

申请日：2002-01-29

申请人： Wen Dong Song ,  Minghui Hong ,  Chengwu An ,  Yong Feng Lu

发明人： Wen Dong Song ,  Minghui Hong ,  Chengwu An ,  Yong Feng Lu

IPC分类号： B08B7/00 ,  B23K26/00 ,  B23K26/06 ,  H01L21/00

CPC分类号： B08B7/0042 ,  B23K26/0624 ,  B23K26/351 ,  B23K2101/40 ,  H01L21/67092 ,  H01L21/67144

摘要： This invention relates to a method and apparatus for deflashing integrated circuit (IC) packages by laser irradiation. The method and apparatus include two lasers scanning flash area for performing deflashing operation. CO2 laser is used to remove top layer of flash and YAG laser is used to remove the thin layer of flash remained after CO2 laser deflashing. CO2 laser deflashing and following YAG laser deflashing can effectively remove flash and avoid damage of heat sinks as well as leads and bars in the IC packages.

摘要翻译： 本发明涉及一种通过激光照射对集成电路（IC）封装进行消融的方法和装置。 该方法和装置包括两个激光扫描闪光区域，用于进行去抖动操作。 CO2激光器用于去除顶层闪光灯，YAG激光器用于去除二氧化碳激光束缚后残留的薄层闪光。 二氧化碳激光束缚和随后的YAG激光束缚可以有效去除闪光灯，避免散热片以及IC封装中引线和棒的损坏。

公开(公告)号：US06835319B2

公开(公告)日：2004-12-28

申请号：US10078382

申请日：2002-02-21

申请人： Wen Dong Song ,  Minghui Hong ,  Yong Feng Lu

发明人： Wen Dong Song ,  Minghui Hong ,  Yong Feng Lu

IPC分类号： H01L21302

CPC分类号： C03C17/23 ,  B23K26/1224 ,  B23K26/146 ,  B23K2101/40 ,  C03C2217/211 ,  C03C2217/215 ,  C03C2217/231 ,  C03C2218/33 ,  H01L21/30604 ,  H01L21/31111

摘要： A method of patterning a substrate includes forming a liquid film on the substrate surface and directing laser energy from a laser through the film to etch the substrate surface. Etched material is carried away from the substrate surface via evaporation of the film during the etching. The liquid film may be formed on the substrate surface by jetting a liquid vapor onto the substrate.

摘要翻译： 图案化衬底的方法包括在衬底表面上形成液膜并将来自激光器的激光能量引导通过膜以蚀刻衬底表面。 在蚀刻期间通过膜的蒸发将蚀刻的材料从衬底表面带走。 液体膜可以通过将液体蒸气喷射到基板上而形成在基板表面上。

公开(公告)号：US06576867B1

公开(公告)日：2003-06-10

申请号：US09857724

申请日：2002-02-12

申请人： Yong Feng Lu ,  Yak Hui Sim ,  Qiong Chen ,  Long Chen Lai ,  Bin Othman Rustam

发明人： Yong Feng Lu ,  Yak Hui Sim ,  Qiong Chen ,  Long Chen Lai ,  Bin Othman Rustam

IPC分类号： B23K2636

CPC分类号： H01L21/67092 ,  B08B7/0042 ,  H01L21/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for the removal of mold flash from an IC device using a non-thermal laser ablation method. Ablation is achieved under conditions in which the mold flash is converted to plasma under short laser pulses which do not give sufficient time or energy for significant thermal processes to occur. As a result, the heat sink underneath the mold flash is prevented from heating up due to lack of heat transfer, thereby protecting the heat sink from heat damages. According to one feature of the invention, a mask is provided to protect the molded packaging of the IC device from the laser beam. The mask has at least one hole which corresponds to the heat sink of the device wherethrough the laser beam can pass. According to another feature of the invention, a large beam diameter is provided to increase the efficiency of the deflashing process.

摘要翻译： 一种使用非热激光烧蚀方法从IC器件去除模具闪光的方法和装置。 在短激光脉冲下将模具闪光转换成等离子体的条件下实现消融，这对于显着的热处理没有给出足够的时间或能量。 结果，由于缺少热传递，防止模具闪光下面的散热器被加热，从而保护散热器免受热损坏。 根据本发明的一个特征，提供一种掩模以保护IC器件的模制封装免受激光束的影响。 掩模具有至少一个孔，其对应于通过激光束可以通过的装置的散热器。 根据本发明的另一个特征，提供了大的光束直径以提高去屑过程的效率。

公开(公告)号：US6156654A

公开(公告)日：2000-12-05

申请号：US206746

申请日：1998-12-07

申请人： Chaw Sing Ho ,  Yuan Ping Lee ,  Chan Lap ,  Yong Feng Lu ,  R. P.G. Karunasiri

发明人： Chaw Sing Ho ,  Yuan Ping Lee ,  Chan Lap ,  Yong Feng Lu ,  R. P.G. Karunasiri

IPC分类号： H01L21/268 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/44

CPC分类号： H01L29/66628 ,  H01L21/268 ,  H01L21/28518 ,  H01L29/665 ,  H01L21/28052

摘要： Methods are disclosed for forming ultra-thin (.about.300-.ANG.), uniform and stoichiometric C54-titanium silicide with a Ti film thickness of 200-300 .ANG. using pulsed laser salicidation. The invention achieves this by preferably step-scanning from die to die, across the wafer using laser pulses with an optical fluence (laser energy) ranging from 0.1 to 0.2 J/cm.sup.2 for approximately 23 nanoseconds per pulse. The source of radiation can be a XeCl or KrF excimer laser, or one in which the laser's wavelength is chosen such that the laser energy is absorbed the most by the refractory metal, i.e. titanium (Ti), cobalt (Co) or nickel (Ni). The laser beam size is typically die-size or can be fine tuned to 1 to 100 .mu.m and can be optimized to reduce the intensity variation across the laser spot diameter. At each position between 1 to 100 pulses can be emitted on the wafer. Localized heating is possible with the ability to establish the ambient temperature at or below 200.degree. C.

摘要翻译： 公开了使用脉冲激光盐析法形成超薄（DIFFERENCE 300-ANGSTROM），均匀和化学计量的C54-硅化钛，Ti膜厚度为200-300安培的方法。 本发明通过优选地使用具有0.1至0.2J / cm 2的光能（激光能量）的脉冲，每脉冲约23纳秒的激光脉冲，优选地通过晶片将晶片从芯片到裸片逐步扫描。 辐射源可以是XeCl或KrF准分子激光器，或者其中选择激光器的波长使得激光能量被难熔金属，即钛（Ti），钴（Co）或镍（Ni ）。 激光束尺寸通常是模具尺寸或可以微调到1至100μm，并且可以被优化以减少激光光斑直径上的强度变化。 在晶片上可以发射1至100个脉冲的每个位置。 局部加热是可能的，能够建立环境温度在或低于200℃。

公开(公告)号：US6009888A

公开(公告)日：2000-01-04

申请号：US73946

申请日：1998-05-07

申请人： Jian-Hui Ye ,  Yuan-Ping Lee ,  Mei-Sheng Zhou ,  Yong-Feng Lu

发明人： Jian-Hui Ye ,  Yuan-Ping Lee ,  Mei-Sheng Zhou ,  Yong-Feng Lu

IPC分类号： B08B7/00 ,  G03F7/42 ,  H01L21/311 ,  B08B7/04

CPC分类号： H01L21/31127 ,  B08B7/0042 ,  G03F7/423 ,  H01L21/31133

摘要： A method of stripping photoresist and polymer from a wafer after a dry etch of a nitrade or a polysilicon layer that immerses the wafer in a peroxydisulfate (S.sub.2 O.sub.8.sup.2-)/HCl wet bath and while the wafer is still immersed, irradiates the wafer with a UV laser. The method comprises: (a) forming an silicon nitride layer 24 and a photoresist pattern 28 over a semi conductor structure 10; (b) dry etching the silicon nitride layer 24 thus forming a polymer 30 over the photoresist pattern, and the silicon nitride layer, (c) Immersing the substrate, the photoresist pattern, the polymer 30 in a liquid bath 34 comprising (1) peroxydisulfate (S.sub.2 O.sub.8.sup.2-), (2) HCl, and (3) water; and irradiating the photoresist pattern 28 and polymer layer 30 with a UV laser thereby removing the photoresist 28 and polymer 30.

摘要翻译： 在将晶片浸入过氧二硫酸盐（S2O82-）/ HCl湿浴中并在晶片仍然浸没之后的氮化或多晶硅层的干蚀刻之后，从晶片剥离光致抗蚀剂和聚合物的方法， 激光。 该方法包括：（a）在半导体结构10上形成氮化硅层24和光致抗蚀剂图案28; （b）干蚀刻氮化硅层24，从而在光致抗蚀剂图案和氮化硅层上形成聚合物30，（c）将基底，光致抗蚀剂图案，聚合物30浸入液浴34中，该液槽34包括（1）过氧化二硫酸 （S2O82-），（2）HCl和（3）水; 并用UV激光照射光致抗蚀剂图案28和聚合物层30，从而除去光致抗蚀剂28和聚合物30。

公开(公告)号：US06518540B1

公开(公告)日：2003-02-11

申请号：US09332756

申请日：1999-06-14

申请人： Teng Soon Wee ,  Lian Boon Koh ,  Daming Liu ,  Yuan Yuan ,  Yong Feng Lu ,  Jui Kiat Goh ,  Kuan Teck Chang

发明人： Teng Soon Wee ,  Lian Boon Koh ,  Daming Liu ,  Yuan Yuan ,  Yong Feng Lu ,  Jui Kiat Goh ,  Kuan Teck Chang

IPC分类号： B23K2618

CPC分类号： B23K26/361

摘要： A method and apparatus for creating ablation-free visible markings on a multi-layer hard disk magnetic storage media by laser-induced deformation while maintaining the integrity of the protective carbon layer, and without destroying the multi-layered structure of the media. The apparatus includes a laser generator, a rotatable optical plate and a beamsplitter by which the fluence of the beam can be controlled without altering the power setting to the laser generator, a beam sampler for determining the fluence of the beam, and an optical plate which acts with the beamsplitter to eliminate unwanted reflection of the laser beam. The laser beam is steered by a beamsteerer to a hard disk held in a material handling unit. This technique is highly suitable for marking or labeling finished hard disks for the purposes of identification and traceability, without creating any short-term or long-term contamination problems. The corresponding storage media so marked are also claimed.

摘要翻译： 一种用于通过激光诱导变形在多层硬盘磁性存储介质上产生无消融可见标记的方法和装置，同时保持保护性碳层的完整性，并且不破坏介质的多层结构。 该装置包括激光发生器，可旋转光学板和分束器，通过该分束器可以控制光束的注量而不改变对激光发生器的功率设置，用于确定光束的光束的光束采样器和光学板， 与分束器一起作用以消除激光束的不必要的反射。 激光束被束流器转向保持在材料处理单元中的硬盘。 该技术非常适合于为了识别和追溯而进行标记或标记成品硬盘，而不会产生任何短期或长期的污染问题。 还声明了如此标记的相应存储介质。

公开(公告)号：US5961860A

公开(公告)日：1999-10-05

申请号：US456298

申请日：1995-06-01

申请人： Yong Feng Lu ,  Daniel Siu Hung Chan ,  Teck Seng Low

发明人： Yong Feng Lu ,  Daniel Siu Hung Chan ,  Teck Seng Low

IPC分类号： B08B7/00 ,  B23K26/00 ,  B23K26/03

CPC分类号： B29C37/02 ,  B08B7/0042 ,  B23K26/032 ,  B23K26/0344 ,  B23K26/0665 ,  B23K26/351

摘要： A dry process to remove mold flash on integrated circuit packages (IC packages) by using pulse, short wavelength laser irradiation. The mold remnants on the surface or in holes of the lead frame can be removed by pulse laser irradiation, with the effect of thermal expansion of lead frame metals and momentum transferring from the laser beam to the mold remnants. Compared with conventional water jet or etching processes, the new technique has high productivity and does not degrade the reliability of the IC packages, due to the fact that there is no water or chemical solutions involved in the process.

摘要翻译： 通过使用脉冲短波长激光照射，在集成电路封装（IC封装）上清除模具闪光的干法。 通过脉冲激光照射可以消除引线框架表面或孔中的模具残留，引起框架金属的热膨胀和从激光束向模具残余物转移的动量的影响。 与传统的水射流或蚀刻工艺相比，新技术具有高生产率，并且不会降低IC封装的可靠性，因为在该过程中不存在水或化学溶液。