公开(公告)号：US6156654A

公开(公告)日：2000-12-05

申请号：US206746

申请日：1998-12-07

申请人： Chaw Sing Ho ,  Yuan Ping Lee ,  Chan Lap ,  Yong Feng Lu ,  R. P.G. Karunasiri

发明人： Chaw Sing Ho ,  Yuan Ping Lee ,  Chan Lap ,  Yong Feng Lu ,  R. P.G. Karunasiri

IPC分类号： H01L21/268 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/44

CPC分类号： H01L29/66628 ,  H01L21/268 ,  H01L21/28518 ,  H01L29/665 ,  H01L21/28052

摘要： Methods are disclosed for forming ultra-thin (.about.300-.ANG.), uniform and stoichiometric C54-titanium silicide with a Ti film thickness of 200-300 .ANG. using pulsed laser salicidation. The invention achieves this by preferably step-scanning from die to die, across the wafer using laser pulses with an optical fluence (laser energy) ranging from 0.1 to 0.2 J/cm.sup.2 for approximately 23 nanoseconds per pulse. The source of radiation can be a XeCl or KrF excimer laser, or one in which the laser's wavelength is chosen such that the laser energy is absorbed the most by the refractory metal, i.e. titanium (Ti), cobalt (Co) or nickel (Ni). The laser beam size is typically die-size or can be fine tuned to 1 to 100 .mu.m and can be optimized to reduce the intensity variation across the laser spot diameter. At each position between 1 to 100 pulses can be emitted on the wafer. Localized heating is possible with the ability to establish the ambient temperature at or below 200.degree. C.

摘要翻译： 公开了使用脉冲激光盐析法形成超薄（DIFFERENCE 300-ANGSTROM），均匀和化学计量的C54-硅化钛，Ti膜厚度为200-300安培的方法。 本发明通过优选地使用具有0.1至0.2J / cm 2的光能（激光能量）的脉冲，每脉冲约23纳秒的激光脉冲，优选地通过晶片将晶片从芯片到裸片逐步扫描。 辐射源可以是XeCl或KrF准分子激光器，或者其中选择激光器的波长使得激光能量被难熔金属，即钛（Ti），钴（Co）或镍（Ni ）。 激光束尺寸通常是模具尺寸或可以微调到1至100μm，并且可以被优化以减少激光光斑直径上的强度变化。 在晶片上可以发射1至100个脉冲的每个位置。 局部加热是可能的，能够建立环境温度在或低于200℃。