公开(公告)号：US07244949B2

公开(公告)日：2007-07-17

申请号：US11366533

申请日：2006-03-03

Applicant: Rainer Knippelmeyer ,  Oliver Kienzle

Inventor： Rainer Knippelmeyer ,  Oliver Kienzle

IPC: G21K5/10 ,  G21K7/00 ,  H01J37/28

CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

Abstract translation: 电子 - 光学装置提供用于一次电子束的主光束路径和二次电子的次级光束路径。 电子 - 光学装置包括具有第一，第二和第三磁场区域的磁体装置。 第一磁场区域被主光束路径和次光束路径穿过。 第二磁场区域被布置在第一磁场区域的上游的主光束路径中，并且不被辅助光束路径穿过。 第一和第二磁场区域以基本上相反的方向偏转主光束路径。 第三磁场区域布置在第二磁场区域的下游的次级光束路径中，并且不被第一光束路径穿过。 第一和第三磁场区域以基本上相同的方向偏转次级光束路径。

公开(公告)号：US06903337B2

公开(公告)日：2005-06-07

申请号：US10185729

申请日：2002-07-01

Applicant: Oliver Kienzle ,  Dirk Stenkamp ,  Michael Steigerwald ,  Rainer Knippelmeyer ,  Max Haider ,  Heiko Müller ,  Stephan Uhlemann

Inventor： Oliver Kienzle ,  Dirk Stenkamp ,  Michael Steigerwald ,  Rainer Knippelmeyer ,  Max Haider ,  Heiko Müller ,  Stephan Uhlemann

IPC: G03F7/20 ,  H01J31/00 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285

CPC classification number: H01J37/28 ,  H01J2237/082 ,  H01J2237/2446

Abstract: An examining system for imaging an object positionable in an object plane, includes an illumination device for supplying energy to a delimited field of the object such that charged particles emerge from locations of the field, the field being displaceable in the plane of the object, a first deflector for providing a variable deflection field for guiding charged particles emerging from locations of a selectable region of the object through a fixed, predetermined beam cross-section, and a position-sensitive detector disposed in the beam path such that the charged particles, after having passed through the first deflector, impinge on the position-sensitive detector, wherein particles emerging from different locations of the region are imaged on different locations of the position-sensitive detector which are allocated to the locations of emergence.

Abstract translation: 一种用于对物体平面中定位的物体进行成像的检查系统，包括用于向物体的界定场提供能量的照明装置，使得带电粒子从场的位置出现，该场可在物体的平面中移动， 第一偏转器，用于提供可变偏转场，用于引导通过固定的预定光束横截面从物体的可选择区域的位置出射的带电粒子，以及设置在光束路径中的位置敏感检测器，使得带电粒子在 已经穿过第一偏转器，撞击位置敏感检测器，其中从该区域的不同位置出现的颗粒被成像在位置敏感检测器的分配到出现位置的不同位置上。

公开(公告)号：US07916930B2

公开(公告)日：2011-03-29

申请号：US11900946

申请日：2007-09-14

Applicant: Axel Zibold ,  Wolfgang Harnisch ,  Oliver Kienzle

Inventor： Axel Zibold ,  Wolfgang Harnisch ,  Oliver Kienzle

IPC: G06K9/00

CPC classification number: G03F1/72 ,  G03F1/84

Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

Abstract translation: 用于修复光刻掩模的方法和装置，其中检查光刻掩模是否存在缺陷，并且产生缺陷的列表，其中至少一种类型的缺陷，其范围及其在光刻掩模上的位置 被分配给每个缺陷，并且这些缺陷被修复。

公开(公告)号：US20100266937A1

公开(公告)日：2010-10-21

申请号：US12742741

申请日：2008-11-14

Applicant: Axel Zibold ,  Peter Kuschnerus ,  Oliver Kienzle

Inventor： Axel Zibold ,  Peter Kuschnerus ,  Oliver Kienzle

IPC: G03F1/00

CPC classification number: G03F1/72 ,  G03F1/84

Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion. In such a method, the imaging properties are analyzed in that, for each defect to be improved, a test variable is determined for the defect as a function of focus and illumination, and at least one additional non-defective point on the phase shift mask in the immediate vicinity of the defect is determined, and a minimum allowable deviation between the test variable for the defect and the non-defective point is predetermined as the tolerance criterion.

Abstract translation: 本发明涉及一种修复用于光刻的相移掩模的方法，其中检查相位掩模是否存在缺陷，并且如果存在缺陷，则（i）进行关于哪个缺陷对成像特性的不利影响的分析 （ii）改善所述缺陷，（iii）分析改进的相移掩模的成像特性并检查预定的公差标准的维持，以及（iv）前述两个步骤（ii） 和（iii）如果成像性能不满足预定的公差标准，则可选地重复多次。 在这种方法中，分析成像特性，因为对于要改善的每个缺陷，确定作为焦点和照明的函数的缺陷的测试变量，以及相移掩模上的至少一个附加的非缺陷点 确定缺陷附近，将缺陷的试验变量与非缺陷点之间的最小容许偏差预先设定为公差标准。

公开(公告)号：US20100181479A1

公开(公告)日：2010-07-22

申请号：US12459078

申请日：2009-06-25

Applicant: Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares

Inventor： Rainer Knippelmeyer ,  Oliver Kienzle ,  Thomas Kemen ,  Heiko Mueller ,  Stephan Uhlemann ,  Maximilian Haider ,  Antonio Casares

IPC: H01J3/00 ,  H01J37/02 ,  H01J37/26 ,  H01J37/30

CPC classification number: H01J37/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/10 ,  H01J37/14 ,  H01J37/153 ,  H01J37/28 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/06 ,  H01J2237/14 ,  H01J2237/2817 ,  H01J2237/31774

Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical to element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Abstract translation: 粒子光学装置包括用于产生带电粒子束的带电粒子源; 布置在带电粒子束的光束路径中的多孔板，其中多孔板具有以预定的第一阵列图案形成在其中的多个孔，其中多个带电粒子子束由束形成 在多孔板下游的带电粒子，并且其中通过所述多个子束在所述装置的图像平面中形成多个束斑，所述多个束斑以第二阵列图案布置; 以及用于操纵带电粒子束和/或多个子束的粒子光学元件; 其中所述第一阵列图案在第一方向上具有第一图案规则性，并且所述第二阵列图案在与所述第一方向对应的电子 - 光学上的第二方向上具有第二图案规则性，并且其中所述第二规则性高于所述第一规则性。

公开(公告)号：US20100157046A1

公开(公告)日：2010-06-24

申请号：US12597247

申请日：2008-07-11

Applicant: Oliver Kienzle ,  Rigo Richter ,  Norbert Rosenkranz ,  Yuji Kobiyama ,  Thomas Scheruebl

Inventor： Oliver Kienzle ,  Rigo Richter ,  Norbert Rosenkranz ,  Yuji Kobiyama ,  Thomas Scheruebl

IPC: H04N7/18 ,  G06K9/62

CPC classification number: G03F1/72 ,  G03F1/30

Abstract: The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

Abstract translation: 本发明涉及一种用于分析用于光刻的一组至少两个掩模的方法，其中每个掩模包括总结构的子结构，其将在光刻工艺中被引入晶片的层中，并且总共 通过依次引入子结构，在晶片层中引入结构。 在该方法中，将至少两个掩模中的第一个的第一空间图像记录，数字化并存储在数据结构中。 然后，将至少两个掩模中的第二个的第二个空间图像记录，数字化并存储在数据结构中。 从第一和第二空间图像的数据生成组合图像，该组合图像被表示和/或评估。

公开(公告)号：US20080069431A1

公开(公告)日：2008-03-20

申请号：US11900946

申请日：2007-09-14

Applicant: Axel Zibold ,  Wolfgang Harnisch ,  Oliver Kienzle

Inventor： Axel Zibold ,  Wolfgang Harnisch ,  Oliver Kienzle

IPC: G06K9/00

CPC classification number: G03F1/72 ,  G03F1/84

Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

Abstract translation: 用于修复光刻掩模的方法和装置，其中检查光刻掩模是否存在缺陷，并且产生缺陷的列表，其中至少一种类型的缺陷，其范围及其在光刻掩模上的位置 被分配给每个缺陷，并且这些缺陷被修复。

公开(公告)号：US06878936B2

公开(公告)日：2005-04-12

申请号：US10619690

申请日：2003-07-16

Applicant: Oliver Kienzle ,  Rainer Knippelmeyer

Inventor： Oliver Kienzle ,  Rainer Knippelmeyer

IPC: G03F7/20 ,  G01N23/00 ,  G01Q10/00 ,  G01Q30/02 ,  G02B21/06 ,  G21K1/08 ,  G21K7/00 ,  H01J29/70 ,  H01J37/04 ,  H01J37/12 ,  H01J37/14 ,  H01J37/141 ,  H01J37/145 ,  H01J37/147 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027

CPC classification number: H01J37/141 ,  H01J37/12 ,  H01J37/14 ,  H01J2237/121 ,  H01J2237/28 ,  H01J2237/3175

Abstract: A particle-optical apparatus is proposed which comprises a particle-optical lens for deflecting a plurality of separate beam-charged particles which is provided by a plurality of finger electrodes provided along an opening of the lens.

Abstract translation: 提出了一种粒子光学装置，其包括用于偏转由沿着透镜的开口设置的多个指状电极提供的多个单独的束带电粒子的粒子光学透镜。

公开(公告)号：US06756599B2

公开(公告)日：2004-06-29

申请号：US10115886

申请日：2002-04-04

Applicant: Oliver Kienzle

Inventor： Oliver Kienzle

IPC: A61N500

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/31788

Abstract: A particle-optical apparatus for changing trajectories of charged particles of a divergent particle beam oriented along a longitudinal axis is proposed, comprising: an inner electrode arrangement which is at least partially transparent for the particles, engages at least partially around the longitudinal axis with a radial distance and extends along the longitudinal axis, an outer electrode arrangement which engages at least partially around the inner electrode arrangement with a radial distance and extends along the longitudinal axis, and a voltage source for providing a potential difference between the inner and the outer electrode arrangements, wherein the voltage source provides such a potential difference that a kinetic component of a particle traversing the inner electrode arrangement is reversible, said kinetic component being oriented orthogonally to the longitudinal axis. Moreover, an illumination system and an imaging system as well as a manufacturing method employing said particle-apparatus are proposed.

Abstract translation: 提出了一种用于改变沿着纵向轴线定向的发散粒子束的带电粒子的轨迹的粒子光学装置，其包括：对于颗粒至少部分透明的内部电极装置，至少部分地围绕纵向轴线与一个 径向距离并且沿着纵向轴线延伸;外部电极装置，其至少部分地围绕内部电极装置具有径向距离并且沿着纵向轴线延伸;以及电压源，用于在内部和外部电极装置之间提供电位差 其中电压源提供这样的电位差，使得穿过内部电极装置的粒子的动力学分量是可逆的，所述动力学分量与纵向轴线正交定向。此外，照明系统和成像系统以及制造 采用所述粒子的方法 提出了装置。

公开(公告)号：US07015487B2

公开(公告)日：2006-03-21

申请号：US09934262

申请日：2001-08-21

Applicant: Oliver Kienzle ,  Alexander Orchowski

Inventor： Oliver Kienzle ,  Alexander Orchowski

IPC: H01J37/304

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3045 ,  H01J37/3174

Abstract: A projection apparatus for imaging a pattern of a mask onto a substrate by means of a beam of projected charged particles is disclosed. The apparatus includes a radiation sensitive layer. The apparatus also includes a mask. The mask includes a membrane layer made of a first material, scattering regions forming the pattern and made of a second material scattering the charged particles more than the membrane layer, and a plurality of straightly extending supporting struts spaced apart from one another and supporting the membrane layer together with the scattering regions. The apparatus also includes a projection apparatus. The projection apparatus includes a beam shaping device for producing the projection beam with a predetermined projection beam cross-section in the mask plane, and a positioning device for moving the projection beam cross-section in the mask plane along a predetermined path over the mask parallel to the direction into which the struts extend. The apparatus also includes a sensor for supplying a measuring signal which is dependent on the number of charged particles impinging on a mark region provided on the mask.