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    Dosimeter powered by passive RF absorption
    2.
    发明授权
    Dosimeter powered by passive RF absorption 有权
    剂量计由被动射频吸收提供动力

    公开(公告)号：US08212218B2

    公开(公告)日：2012-07-03

    申请号：US12627076

    申请日：2009-11-30

    Applicant: Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    Inventor： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Steven J. Koester ,  Conal E. Murray ,  Kenneth P. Rodbell ,  Stephen M. Rossnagel ,  Robert L. Wisnieff ,  Jeng-bang Yau

    IPC: G01T1/02

    CPC classification number: G01T1/026

    Abstract: A system for determining an amount of radiation includes a dosimeter configured to receive the amount of radiation, the dosimeter comprising a circuit having a resonant frequency, such that the resonant frequency of the circuit changes according to the amount of radiation received by the dosimeter, the dosimeter further configured to absorb RF energy at the resonant frequency of the circuit; a radio frequency (RF) transmitter configured to transmit the RF energy at the resonant frequency to the dosimeter; and a receiver configured to determine the resonant frequency of the dosimeter based on the absorbed RF energy, wherein the amount of radiation is determined based on the resonant frequency.

    Abstract translation: 用于确定辐射量的系统包括配置成接收辐射量的剂量计，该剂量计包括具有谐振频率的电路，使得电路的谐振频率根据剂量计接收的辐射量而改变， 剂量计还被配置为吸收电路的谐振频率处的RF能量; 射频（RF）发射器，被配置为以共振频率将所述RF能量传输到所述剂量计; 以及接收器，被配置为基于所吸收的RF能量来确定所述剂量计的谐振频率，其中所述辐射量基于所述谐振频率来确定。

    CMOS storage devices configurable in high performance mode or radiation tolerant mode
    3.
    发明授权
    CMOS storage devices configurable in high performance mode or radiation tolerant mode 有权
    CMOS存储设备可在高性能模式或辐射容忍模式下配置

    公开(公告)号：US07719887B2

    公开(公告)日：2010-05-18

    申请号：US11845170

    申请日：2007-08-27

    Applicant: Ethan H. Cannon ,  Michael S. Gordon ,  Christopher D. LeBlanc ,  Kenneth P. Rodbell

    Inventor： Ethan H. Cannon ,  Michael S. Gordon ,  Christopher D. LeBlanc ,  Kenneth P. Rodbell

    IPC: G11C11/00

    CPC classification number: G11C11/4125 ,  G11C13/0004

    Abstract: A radiation tolerant circuit, structure of the circuit and method of autonomic radiation event device protection. The circuit includes a charge storage node connected to a resistor, the resistor comprising a material having an amorphous state and a crystalline state, the amorphous state having a higher resistance than the crystalline state, the material reversibly convertible between the amorphous state and the crystalline state by application of heat; an optional resistive heating element proximate to the resistor; and means for writing data to the charge storage node and means for reading data from the charge storage node.

    Abstract translation: 辐射耐受电路，电路结构及自主辐射事件装置保护方法。 电路包括连接到电阻器的电荷存储节点，该电阻器包括具有非晶状态和结晶状态的材料，非晶状态具有比结晶状态更高的电阻，该材料可在非晶状态和结晶态之间可逆地转换 通过应用热量; 靠近电阻器的可选电阻加热元件; 以及用于向电荷存储节点写入数据的装置和用于从电荷存储节点读取数据的装置。

    Cardiopulmonary patient simulator
    5.
    发明授权
    Cardiopulmonary patient simulator 有权
    心肺患者模拟器

    公开(公告)号：US07316568B2

    公开(公告)日：2008-01-08

    申请号：US11284093

    申请日：2005-11-22

    Applicant: Michael S. Gordon ,  S. Barry Issenberg ,  David Arthur Lawson

    Inventor： Michael S. Gordon ,  S. Barry Issenberg ,  David Arthur Lawson

    IPC: G09B23/28

    CPC classification number: G09B23/28

    Abstract: A simulator for simulating a pulse in a manikin comprises a manikin body. The simulator further comprises a first magnet and a second magnet disposed opposite to each other and spaced apart from each other. The first magnet and second magnet comprise two juxtaposed first and second sub-magnets. The first and second juxtaposed sub-magnets in each magnet are oriented substantially in opposite directions. The first magnet and the second magnet are positioned such that the first sub-magnet of the first magnet is oriented substantially in a same direction as the first sub-magnet of the second magnet and such that the second sub-magnet of the first magnet is oriented substantially in a same direction as the second sub-magnet of the second magnet. The transducer further comprises an armature movably disposed between the first and second magnets. The armature comprises a frame and a solenoid wound adjacent a periphery of the frame. The transducer also comprises a rod attached to the frame of the armature. The armature interacts with the manikin body to simulate the pulse.

    Abstract translation: 用于模拟人体模型中的脉冲的模拟器包括人体模型体。 模拟器还包括彼此相对设置并彼此间隔开的第一磁体和第二磁体。 第一磁体和第二磁体包括两个并列的第一和第二子磁体。 每个磁体中的第一和第二并置的副磁体基本上在相反的方向上取向。 第一磁体和第二磁体被定位成使得第一磁体的第一子磁体大致与第二磁体的第一子磁体相同的方向取向，并且使得第一磁体的第二子磁体为 基本上与第二磁体的第二子磁体相同的方向定向。 换能器还包括可移动地设置在第一和第二磁体之间的衔铁。 电枢包括邻近框架周边的框架和螺线管。 换能器还包括连接到电枢的框架的杆。 电枢与人体模型身体相互作用以模拟脉冲。

    Multiple numerical aperture electron beam projection lithography system
    6.
    发明授权
    Multiple numerical aperture electron beam projection lithography system 失效
    多数值孔径电子束投影光刻系统

    公开(公告)号：US06414313B1

    公开(公告)日：2002-07-02

    申请号：US09323010

    申请日：1999-06-01

    Applicant: Michael S. Gordon ,  Rodney A. Kendall ,  David J. Pinckney

    Inventor： Michael S. Gordon ,  Rodney A. Kendall ,  David J. Pinckney

    IPC: H01J3709

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3174

    Abstract: A beam-limiting aperture truncates selected portions of a charged particle beam illuminating portions such as subfields of a patterned reticle of a charged particle beam projection lithography tool and then projects a pattern of charged particles onto a target in a charged particle beam lithography tool. The respective portions of the reticle are patterned in accordance with respective portions of an integrated circuit or other desired pattern and may have differing transmissivities; altering beam current at the target even when source beam current remains substantially constant. The portion of the beam which is truncated, thus altering the particle trajectory semi-angle and numerical aperture of the tool is controlled in accordance with the transmissivity of the reticle portion to enhance resolution to near optimal limits.

    Abstract translation: 光束限制孔截取带电粒子束的选定部分，照射部分，例如带电粒子束投影光刻工具的图案化掩模版的子场，然后将带电粒子的图案投射到带电粒子束光刻工具中的靶上。 掩模版的各个部分根据集成电路或其他所需图案的相应部分进行图案化，并且可具有不同的透射率; 即使当源光束电流保持基本恒定时，也改变目标处的光束电流。 根据标线片部分的透射率来控制截断的梁的部分，从而改变工具的粒子轨迹半角和数值孔径，以将分辨率提高到接近最佳极限。

    Fully depleted silicon on insulator neutron detector
    7.
    发明授权
    Fully depleted silicon on insulator neutron detector 有权
    完全耗尽的绝缘体中子探测器

    公开(公告)号：US08614111B2

    公开(公告)日：2013-12-24

    申请号：US13189848

    申请日：2011-07-25

    Applicant: Michael S. Gordon ,  Kenneth P. Rodbell ,  Jeng-Bang Yau

    Inventor： Michael S. Gordon ,  Kenneth P. Rodbell ,  Jeng-Bang Yau

    IPC: H01L31/119 ,  H01L31/18

    CPC classification number: H01L31/119

    Abstract: A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3 (3He), and gadolinium-157 (157Gd).

    Abstract translation: 一种形成中子检测器的方法，包括使辐射检测器的背面硅衬底变薄; 并在辐射检测器的薄化的背面硅衬底上形成中子转换层以形成中子检测器。 中子转换层包括硼-10（10B），锂-6（6Li），氦-3（3He）和钆-157（157Gd）中的一种。

    On-chip radiation dosimeter
    8.
    发明授权
    On-chip radiation dosimeter 失效
    片上辐射剂量计

    公开(公告)号：US08361829B1

    公开(公告)日：2013-01-29

    申请号：US13222790

    申请日：2011-08-31

    Applicant: Michael S. Gordon ,  Kenneth P. Rodbell ,  Jeng-Bang Yau

    Inventor： Michael S. Gordon ,  Kenneth P. Rodbell ,  Jeng-Bang Yau

    IPC: H01L23/552 ,  H01L27/14 ,  H01L31/08 ,  G01T1/24

    CPC classification number: H01L21/26533 ,  H01L21/3115 ,  H01L21/76243 ,  H01L21/84 ,  H01L27/1203 ,  H01L31/119 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for forming a semiconductor device includes forming an implant mask on a substrate, such that a first portion of the substrate is located under the implant mask, and a second portion of the substrate is exposed; performing oxygen ion implantation of the substrate; removing the implant mask; and forming a first field effect transistor (FET) on the first portion of the substrate, and forming a second FET on the second portion of the substrate, wherein the second FET has a higher radiation sensitivity than the first FET.

    Abstract translation: 用于形成半导体器件的方法包括在衬底上形成注入掩模，使得衬底的第一部分位于注入掩模下方，并且衬底的第二部分被暴露; 进行所述基板的氧离子注入; 去除植入物掩模; 以及在所述衬底的第一部分上形成第一场效应晶体管（FET），以及在所述衬底的第二部分上形成第二FET，其中所述第二FET具有比所述第一FET更高的辐射灵敏度。

    Particle emission analysis for semiconductor fabrication steps
    9.
    发明授权
    Particle emission analysis for semiconductor fabrication steps 有权
    半导体制造步骤的粒子发射分析

    公开(公告)号：US08158449B2

    公开(公告)日：2012-04-17

    申请号：US12247474

    申请日：2008-10-08

    Applicant: Cyril Cabral, Jr. ,  Michael S. Gordon ,  Jeff McMurray ,  Liesl M. McMurray, legal representative ,  Cristina Plettner ,  Paul Andrew Ronsheim

    Inventor： Cyril Cabral, Jr. ,  Michael S. Gordon ,  Jeff McMurray ,  Cristina Plettner ,  Paul Andrew Ronsheim

    IPC: H01L21/00

    CPC classification number: G01T1/00 ,  H01L22/10

    Abstract: A structure and a method for operating the same. The method includes providing a detecting structure which includes N detectors. N is a positive integer. A fabrication step is simultaneously performed on the detecting structure and M product structures in a fabrication tool resulting in a particle-emitting layer on the detecting structure. The detecting structure is different than the M product structures. The M product structures are identical. M is a positive integer. An impact of emitting particles from the particle-emitting layer on the detecting structure is analyzed after said performing is performed.

    Abstract translation: 一种结构及其操作方法。 该方法包括提供包括N个检测器的检测结构。 N是正整数。 在制造工具中的检测结构和M产品结构上同时进行制造步骤，从而在检测结构上产生颗粒发射层。 检测结构与M产品结构不同。 M产品结构相同。 M是正整数。 在执行所述执行之后，分析从颗粒发射层发射颗粒对检测结构的影响。

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