公开(公告)号：US07550823B2

公开(公告)日：2009-06-23

申请号：US11777657

申请日：2007-07-13

Applicant: Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

Inventor： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC: H01L23/58 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/04 ,  H01L29/06 ,  H01L21/336 ,  H01L21/8234

CPC classification number: H01L21/28273 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7881 ,  Y10S977/72 ,  Y10S977/721 ,  Y10S977/723 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/784 ,  Y10S977/785

Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Abstract translation: 非易失性存储单元能够通过使用一氧化二氮等离子体形成包含氧氮化硅（SiO x N y）层的第一氧化物膜，并且通过形成多晶硅的粗糙表面而能够减少由于多晶硅的粗糙表面而导致的过大的电流泄漏，甚至在低温工艺 通过离子注入法在氮化物膜上注入硅纳米晶体的氮化物膜中的多个硅纳米晶体及其制造方法和包括非易失性存储单元的存储装置。

公开(公告)号：US20080121887A1

公开(公告)日：2008-05-29

申请号：US11777637

申请日：2007-07-13

Applicant: Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

Inventor： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC: H01L29/06 ,  H01L21/3205

CPC classification number: H01L29/7881 ,  B82Y10/00 ,  H01L21/28273 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513

Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Abstract translation: 非易失性存储器件能够减少由多晶硅的粗糙表面引起的过大的漏电流，并且通过形成包括氮氧化硅（SiO 2）的第一氧化物膜，实现改进的阻挡功能， 使用一氧化二氮（N 2 O 3）等离子体，并且通过形成富硅的氮化硅膜，以及其制造方法和包括非氧化氮（N 2 O 3） 易失存储器件。 此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

公开(公告)号：US20080121888A1

公开(公告)日：2008-05-29

申请号：US11777657

申请日：2007-07-13

Applicant: Byoung Deog CHOI ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

Inventor： Byoung Deog CHOI ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC: H01L29/06 ,  H01L21/336

CPC classification number: H01L21/28273 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7881 ,  Y10S977/72 ,  Y10S977/721 ,  Y10S977/723 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/784 ,  Y10S977/785

Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Abstract translation: 非易失性存储单元能够通过使用一氧化二氮等离子体形成包含氧氮化硅（SiO x N y）层的第一氧化物膜，并且通过形成多晶硅的粗糙表面而能够减少由于多晶硅的粗糙表面而导致的过大的电流泄漏，甚至在低温工艺 通过离子注入法在氮化物膜上注入硅纳米晶体的氮化物膜中的多个硅纳米晶体及其制造方法和包括非易失性存储单元的存储装置。

公开(公告)号：US20110155204A1

公开(公告)日：2011-06-30

申请号：US12700135

申请日：2010-02-04

Applicant: Jun Sin Yi ,  Jin Joo Park ,  Young Kuk Kim

Inventor： Jun Sin Yi ,  Jin Joo Park ,  Young Kuk Kim

IPC: H01L31/042 ,  H01L31/00 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/035281 ,  H01L31/075 ,  Y02E10/548

Abstract: Disclosed herein is a wire type thin film solar cell, including: a metal wire which is made of any one selected from the group consisting of aluminum (Al), titanium (Ti), chromium (Cr), molybdenum (Mo) and tungsten (W); an N-type layer which is deposited on a circumference of the metal wire and conducts electrons generated from the metal wire; a P-type layer which is deposited on the N-type layer and emits electrons excited by solar light; and a transparent electrode layer which is deposited on the P-type layer. The wire type thin film solar cell can exhibit high photoelectric conversion efficiency compared to conventional flat-plate type thin film solar cells and can be easily manufactured into a highly-dense solar cell module.

Abstract translation: 本发明公开了一种线型薄膜太阳能电池，其包括：金属线，其由选自铝（Al），钛（Ti），铬（Cr），钼（Mo）和钨（ W）; N型层，其沉积在金属线的圆周上并传导从金属线产生的电子; P型层，其沉积在N型层上并发射由太阳光激发的电子; 以及沉积在P型层上的透明电极层。 与常规的平板型薄膜太阳能电池相比，线型薄膜太阳能电池可以表现出高的光电转换效率，并且可以容易地制造成高密度太阳能电池模块。

公开(公告)号：US20100148155A1

公开(公告)日：2010-06-17

申请号：US12388829

申请日：2009-02-19

Applicant: Byoung deog CHOI ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

Inventor： Byoung deog CHOI ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

IPC: H01L29/786 ,  H01L21/336 ,  H01L51/52

CPC classification number: H01L29/78606 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.

Abstract translation: 公开了薄膜晶体管（TFT），其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层，依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案，限定半导体层的一部分的源极和漏极区域 在作为沟道区域的栅极图案之下，通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层，该钝化层覆盖具有栅极的基板的整个表面 图案，穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分，以及穿透源极区的第二金属电极 设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分 他的钝化层与漏极区电连接。 根据本发明，当TFT工作时，金属渗透到源区和漏区以分散电流，因此电荷迁移率得到改善，并且防止了由过大的电流密度引起的漏极区的损坏，从而导致 使用寿命长，性能优良。

公开(公告)号：US07719047B2

公开(公告)日：2010-05-18

申请号：US11777637

申请日：2007-07-13

Applicant: Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

Inventor： Byoung Deog Choi ,  Jun Sin Yi ,  Sung Wook Jung ,  Sung Hyung Hwang

IPC: H01L29/06

CPC classification number: H01L29/7881 ,  B82Y10/00 ,  H01L21/28273 ,  H01L27/12 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/42332 ,  H01L29/513

Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Abstract translation: 非易失性存储器件能够通过使用一氧化二氮（N 2 O）形成包括氮氧化硅（SiO x N y）层的第一氧化物膜，从而减少由于多晶硅的粗糙表面引起的过大的漏电流，并且实现改进的阻挡功能， 等离子体，并且通过形成富硅的氮化硅膜及其制造方法和包括非易失性存储器件的存储装置。 此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

公开(公告)号：US08110485B2

公开(公告)日：2012-02-07

申请号：US12388846

申请日：2009-02-19

Applicant: Jun sin Yi ,  Byoung deog Choi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

Inventor： Jun sin Yi ,  Byoung deog Choi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

IPC: H01L21/36 ,  H01L29/76

CPC classification number: H01L21/02532 ,  H01L21/02436 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28282 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract translation: 提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。 形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。 在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

公开(公告)号：US08022398B2

公开(公告)日：2011-09-20

申请号：US12388829

申请日：2009-02-19

Applicant: Byoung deog Choi ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

Inventor： Byoung deog Choi ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

IPC: H01L29/08

CPC classification number: H01L29/78606 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.

Abstract translation: 公开了薄膜晶体管（TFT），其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层，依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案，限定半导体层的一部分的源极和漏极区域 在作为沟道区域的栅极图案之下，通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层，该钝化层覆盖具有栅极的基板的整个表面 图案，穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分，以及穿透源极区的第二金属电极 设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分 他的钝化层与漏极区电连接。 根据本发明，当TFT工作时，金属渗透到源区和漏区以分散电流，因此电荷迁移率得到改善，并且防止了由过大的电流密度引起的漏极区的损坏，从而导致 使用寿命长，性能优良。

公开(公告)号：US20100148181A1

公开(公告)日：2010-06-17

申请号：US12388846

申请日：2009-02-19

Applicant: Byoung Deog Choi ,  Jun Sin YI ,  Sung Wook Jung ,  Kyung Soo Jang ,  Jae Hyun Cho

Inventor： Byoung Deog Choi ,  Jun Sin YI ,  Sung Wook Jung ,  Kyung Soo Jang ,  Jae Hyun Cho

IPC: H01L29/792 ,  H01L21/20 ,  H01L29/04 ,  H01L21/336

CPC classification number: H01L21/02532 ,  H01L21/02436 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28282 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract translation: 提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。 形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。 在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

公开(公告)号：US07553720B2

公开(公告)日：2009-06-30

申请号：US11604222

申请日：2006-11-27

Applicant: Byoung Deog Choi ,  Ki Yong Lee ,  Ho Kyoon Chung ,  Jun Sin Yi ,  Sung Wook Jung ,  Hyun Min Kim ,  Jun Sik Kim

Inventor： Byoung Deog Choi ,  Ki Yong Lee ,  Ho Kyoon Chung ,  Jun Sin Yi ,  Sung Wook Jung ,  Hyun Min Kim ,  Jun Sik Kim

IPC: H01L21/8238 ,  H01L21/336

CPC classification number: H01L29/792 ,  H01L21/28282 ,  H01L29/513

Abstract: A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

Abstract translation: 非易失性存储器件包括在衬底上的缓冲氧化膜; 缓冲氧化膜上的多晶硅层; 所述多晶硅层上的硅氮化物（SiON）层，所述SiON层上的第一绝缘体层，所述第一绝缘体上的氮化物膜，所述氮化物膜上的第二绝缘体层，所述第二绝缘体上的电极和源极 /漏极在多晶硅层。