Invention Grant
US07550823B2 Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same
有权
非易失性存储单元，其阵列，其制造方法和包括该非易失性存储单元的装置
- Patent Title: Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same
- Patent Title (中): 非易失性存储单元，其阵列，其制造方法和包括该非易失性存储单元的装置
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Application No.: US11777657Application Date: 2007-07-13
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Publication No.: US07550823B2Publication Date: 2009-06-23
- Inventor: Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
- Applicant: Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
- Applicant Address: KR Suwon-si
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stein, McEwen & Bui, LLP
- Priority: KR10-2006-0117153 20061124
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/04 ; H01L29/06 ; H01L21/336 ; H01L21/8234
Abstract:
A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.
Public/Granted literature
- US20080121888A1 NONVOLATILE MEMORY CELL, ARRAY THEREOF, FABRICATION METHODS THEREOF AND DEVICE COMPRISING THE SAME Public/Granted day:2008-05-29
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