摘要:
A high-speed flat panel display having a long lifetime. Thin film transistors in a pixel portion having a plurality of pixels are contacted differently from thin film transistors in driving circuit portions for driving the pixels, thereby enhancing luminance uniformity and reducing power consumption. The thin film transistors each have a channel region and a body contact region for applying a predetermined voltage to the channel region. At least one thin film transistor in the pixel portion is a source-body contact thin film transistor having the body contact region connected to one of source and drain electrodes so that the predetermined voltage can be provided to the channel region. Each thin film transistor in the driving circuit portion is a gate-body contact thin film transistor having the body contact region connected to the gate electrode so that a predetermined voltage can be provided to the channel region.
摘要:
An organic light emitting display having a small thickness and a fabrication method thereof are provided. The organic light emitting display includes a substrate, an non-transmissive layer formed on the substrate, a semiconductor layer formed on the non-transmissive layer, a gate insulation layer formed on the semiconductor layer, a gate electrode formed on the gate insulation layer, an inter-layer dielectric layer formed on the gate electrode, a source/drain electrode formed on the inter-layer dielectric layer, an insulation layer formed on the source/drain electrode, and an organic light emitting diode formed on the insulation layer.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.
摘要:
An organic light emitting display device. The organic light emitting display device includes a substrate having a pixel region in which pixels are formed and a non-pixel region in which a light sensor is formed, an insulating film formed on the substrate, a first electrode formed on the insulating film and formed of a reflective material reflecting light, the first electrode being formed on the entire surface of the insulating film except for a region between the pixels and a region over the light sensor, a pixel defining film exposing a region of the first electrode and formed on the insulating film, an organic light emitting layer formed on the exposed region of the first electrode, and a second electrode formed on the organic light emitting layer. The first electrode is formed to have a greater area than that of the organic light emitting layer.
摘要:
A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.
摘要翻译:非易失性存储单元能够通过使用一氧化二氮等离子体形成包含氧氮化硅(SiO x N y)层的第一氧化物膜,并且通过形成多晶硅的粗糙表面而能够减少由于多晶硅的粗糙表面而导致的过大的电流泄漏,甚至在低温工艺 通过离子注入法在氮化物膜上注入硅纳米晶体的氮化物膜中的多个硅纳米晶体及其制造方法和包括非易失性存储单元的存储装置。
摘要:
A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.
摘要:
An organic electroluminescent display that can prevent decreases in an average luminance of an organic electroluminescent element thereof includes: a data line to supply a data signal; a scan line to supply a scan signal; a first switching element having a control electrode electrically coupled to the scan line, to transfer the data signal from the data line; a first driving transistor having a control electrode electrically coupled to the first switching element, to control a driving current of a first voltage line; a first capacitive element having a first electrode electrically coupled to the first voltage line and having a second electrode electrically coupled to a control electrode of the first driving transistor; an organic electroluminescent element, electrically coupled to the first driving transistor and a third voltage line, to display an image in response to a current supplied from the first driving transistor; and a second voltage line to supply a reverse bias voltage of a second voltage line to the organic electroluminescent element.