公开(公告)号：US08110485B2

公开(公告)日：2012-02-07

申请号：US12388846

申请日：2009-02-19

Applicant: Jun sin Yi ,  Byoung deog Choi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

Inventor： Jun sin Yi ,  Byoung deog Choi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

IPC: H01L21/36 ,  H01L29/76

CPC classification number: H01L21/02532 ,  H01L21/02436 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28282 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract translation: 提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。 形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。 在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

公开(公告)号：US08022398B2

公开(公告)日：2011-09-20

申请号：US12388829

申请日：2009-02-19

Applicant: Byoung deog Choi ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

Inventor： Byoung deog Choi ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

IPC: H01L29/08

CPC classification number: H01L29/78606 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.

Abstract translation: 公开了薄膜晶体管（TFT），其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层，依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案，限定半导体层的一部分的源极和漏极区域 在作为沟道区域的栅极图案之下，通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层，该钝化层覆盖具有栅极的基板的整个表面 图案，穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分，以及穿透源极区的第二金属电极 设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分 他的钝化层与漏极区电连接。 根据本发明，当TFT工作时，金属渗透到源区和漏区以分散电流，因此电荷迁移率得到改善，并且防止了由过大的电流密度引起的漏极区的损坏，从而导致 使用寿命长，性能优良。

公开(公告)号：US20100148181A1

公开(公告)日：2010-06-17

申请号：US12388846

申请日：2009-02-19

Applicant: Byoung Deog Choi ,  Jun Sin YI ,  Sung Wook Jung ,  Kyung Soo Jang ,  Jae Hyun Cho

Inventor： Byoung Deog Choi ,  Jun Sin YI ,  Sung Wook Jung ,  Kyung Soo Jang ,  Jae Hyun Cho

IPC: H01L29/792 ,  H01L21/20 ,  H01L29/04 ,  H01L21/336

CPC classification number: H01L21/02532 ,  H01L21/02436 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28282 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract translation: 提供了使用等离子体沉积技术形成的纳米晶硅层结构，其形成方法，包括纳米晶硅层结构的非易失性存储器件以及制造非易失性存储器件的方法。 形成纳米晶硅层结构的方法包括在衬底上形成缓冲层，并通过使用含硅（Si）的气体和含氢（H 2）的气体）的等离子体沉积技术在缓冲层上形成纳米晶硅层。 在该方法中，可以使用等离子体气相沉积将纳米晶硅层直接沉积在玻璃基板上，而不进行后处理工艺，从而可以简化非易失性存储器件的制造，从而降低制造成本。

公开(公告)号：US20100014920A1

公开(公告)日：2010-01-21

申请号：US12374518

申请日：2007-11-21

Applicant: Kyung Soo Jang ,  Jong Ah Lim ,  Young Mook Chyung ,  Jae Hoon Kim ,  Jae Hee Cho

Inventor： Kyung Soo Jang ,  Jong Ah Lim ,  Young Mook Chyung ,  Jae Hoon Kim ,  Jae Hee Cho

IPC: E02B9/00

CPC classification number: E02B9/08 ,  F03B13/08 ,  F03B13/264 ,  Y02E10/28

Abstract: A turbine structure and a gate structure for tidal power plants of the present invention features that middle walls which can be installed as two units of one block are installed with an inside stuffing and a flexible joint so as to absorb and reduce the internal and external effects of the buoyancy and mechanical vibration of the turbine structures and the gate structures on the tidal power plants, save construction costs by shortened construction period and reduced concrete placing quantity, and prevent the cracks of concrete and the generation of hydration heat. The turbine structure having the flexible joint and the inside stuffing for tidal power plants comprises a base which bottom part is on the submarine rock so that a turbine structure between lake and sea which is connected with a gate structure by the medium of a connection structure can be installed as two units of one block; vertical middle walls which are formed on the base, the top of which is closed by a concrete structure wherein a draft tube and a discharge tube by which seawater can move inside; turbine generators which are arranged between the middle walls through the draft tubes; an inside stuffing space which is formed in the middle walls on one side installed in a predetermined distance on the base of the gate structure and filled with seawater; and a flexible joint of connecting the middle walls on the other side.

Abstract translation: 本发明的潮汐发电厂的涡轮结构和闸门结构的特征在于，可以安装为一个块的两个单元的中间壁安装有内部填充物和柔性接头，以吸收和减少内部和外部效应 在潮汐发电厂的涡轮机结构和闸门结构的浮力和机械振动，通过缩短施工周期和减少混凝土浇筑量，节省施工成本，防止混凝土裂缝和水合热的产生。 具有柔性接头和用于潮汐发电厂的内部填充物的涡轮机结构包括底部，底部位于潜艇岩石上，使得通过连接结构的介质与门结构连接的湖泊与海洋之间的涡轮结构可以 安装为一个单元的两个单元; 垂直中间壁，其形成在基部上，其顶部由混凝土结构封闭，其中，引流管和海水可以在其内移动的排出管; 涡轮发电机，通过引流管布置在中间壁之间; 内侧填充空间，其形成在安装在闸门结构体的基座上的预定距离的一侧的中间壁，并填充有海水; 以及连接另一侧的中间壁的柔性接头。

公开(公告)号：US20100289267A1

公开(公告)日：2010-11-18

申请号：US12812716

申请日：2008-03-12

Applicant: Kyung Soo Jang ,  Jung Eun Lee ,  Jae Won Jang ,  Seung Won Jang

Inventor： Kyung Soo Jang ,  Jung Eun Lee ,  Jae Won Jang ,  Seung Won Jang

IPC: F03B13/26

CPC classification number: F03B13/264 ,  F03B13/08 ,  F03B13/268 ,  F03B17/061 ,  F03B17/062 ,  Y02E10/28

Abstract: An integrated power system combining tidal power generation and ocean current power generation comprises: constructing barrages across the sea to make up a lake; installing turbine structures of a tidal power plant and sluice structures of a tidal power dam for generating electricity by using the potential energy difference between seawaters caused by tides and ebbs; forming an ocean current power park in a lake side by installing a plurality of ocean current generators, for generating electricity by using the flow of the seawater discharged through turbine generators, in a rear lake side of the turbine structures of the tidal power plant; and forming an ocean current power park in a sea side by installing ocean current generators, for generating electricity by using the seawater with the fast speed discharged into the sea through sluice gates, in a rear sea side of the sluice structures of the tidal power dam.

Abstract translation: 结合潮汐发电和海洋发电的综合电力系统，包括：在海上建设堰坝组成湖泊; 通过使用潮汐和潮汐引起的海水之间的潜在能量差异来安装潮汐发电厂的涡轮机结构和潮汐发电大坝的水闸结构，以发电; 通过在潮汐发电厂的涡轮机结构的后湖侧安装多个用于通过涡轮发电机排出的海水的流量来发电的多个洋流发电机，在湖侧形成海洋电力公园; 并通过安装海洋电力发电机组成海上现代电力公园，通过利用海水通过闸门将快速排放到海上的海水发电，在潮汐水坝闸门结构的后海侧 。

公开(公告)号：US20090317191A1

公开(公告)日：2009-12-24

申请号：US12374557

申请日：2007-11-21

Applicant: Kyung Soo Jang ,  Jong Ah Lim ,  Young Mook Chyung ,  Jae Hoon Kim ,  Jae Hee Cho

Inventor： Kyung Soo Jang ,  Jong Ah Lim ,  Young Mook Chyung ,  Jae Hoon Kim ,  Jae Hee Cho

IPC: E02B8/08

CPC classification number: E02B9/08 ,  E02B8/085 ,  F03B13/08 ,  F03B13/264 ,  Y02A40/60 ,  Y02E10/28

Abstract: Fishways of turbine structures and gate structures for environmentally-friendly tidal power plant through which fish can pass through are provided. The fishway comprises of sea side fishways and lake side fishways to allow fish to move between the sea side and the lake side by forming inside stuffing space filled with seawater for shorter construction period and concrete reduced placing quantity in a certain section of the vertical middle walls installed on the base of which the bottom part is on the marine rock to form blocks of turbine structures and gate structures in a tidal power plant, and seawater on the sea side and the lake side is flown through the front and rear of such inside stuffing space.

Abstract translation: 提供了可通过鱼类通过的环保潮汐发电厂的涡轮机结构和闸门结构的鱼道。 鱼道由海侧鱼道和湖边鱼道组成，允许鱼在海边和湖边之间移动，形成填充海水的填充空间较短的施工期，混凝土减少放置量在垂直中间墙的某一部分 安装在底部的海底岩石上，形成潮汐发电厂的涡轮结构和闸门结构块，海侧和湖侧的海水通过这种内部填料的前后流动 空间。

公开(公告)号：US20100148155A1

公开(公告)日：2010-06-17

申请号：US12388829

申请日：2009-02-19

Applicant: Byoung deog CHOI ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

Inventor： Byoung deog CHOI ,  Jun sin Yi ,  Sung wook Jung ,  Kyung soo Jang ,  Jae hyun Cho

IPC: H01L29/786 ,  H01L21/336 ,  H01L51/52

CPC classification number: H01L29/78606 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed. The TFT includes a buffer layer and a semiconductor layer which are sequentially disposed on a substrate, a gate pattern including an insulating pattern and a gate electrode pattern which are sequentially disposed on the semiconductor layer, source and drain regions defining a portion of the semiconductor layer below the gate pattern as a channel area, formed by doping the semiconductor layer disposed at both sides of the gate pattern with impurities, and extending from both sides of the channel area, a passivation layer which covers the entire surface of the substrate having the gate pattern, a first metal electrode which penetrates a portion of the passivation layer disposed on the source area and a portion of the source region below the portion of the passivation layer to be electrically connected with the source region, and a second metal electrode which penetrates a portion of the passivation layer disposed on the drain area and a portion of the drain region below the portion of the passivation layer to be electrically connected with the drain region. According to the present invention, a metal is infiltrated into source and drain regions to disperse an electric current when a TFT operates, and thus charge mobility is improved, and damage of a drain region caused by the excessive current density is prevented, leading to the long lifespan and excellent performance.

Abstract translation: 公开了薄膜晶体管（TFT），其形成方法和具有该薄膜晶体管的平板显示装置。 TFT包括顺序地设置在基板上的缓冲层和半导体层，依次设置在半导体层上的绝缘图案和栅极电极图案的栅极图案，限定半导体层的一部分的源极和漏极区域 在作为沟道区域的栅极图案之下，通过用杂质掺杂设置在栅极图案的两侧的半导体层并从沟道区域的两侧延伸形成的钝化层，该钝化层覆盖具有栅极的基板的整个表面 图案，穿过设置在源极区上的钝化层的一部分的第一金属电极和钝化层的与源极区域电连接的部分下方的源极区的一部分，以及穿透源极区的第二金属电极 设置在漏极区域上的钝化层的一部分和位于t的部分下方的漏极区域的一部分 他的钝化层与漏极区电连接。 根据本发明，当TFT工作时，金属渗透到源区和漏区以分散电流，因此电荷迁移率得到改善，并且防止了由过大的电流密度引起的漏极区的损坏，从而导致 使用寿命长，性能优良。

公开(公告)号：US20100327594A1

公开(公告)日：2010-12-30

申请号：US12864652

申请日：2008-04-29

Applicant: Kyung Soo Jang ,  Jung Eun Lee ,  Jae Won Jang ,  Seung Won Jang

Inventor： Kyung Soo Jang ,  Jung Eun Lee ,  Jae Won Jang ,  Seung Won Jang

IPC: F03B13/08 ,  F03B13/26

CPC classification number: F03B13/264 ,  E02B9/08 ,  E02C1/00 ,  F03B13/268 ,  Y02A10/386 ,  Y02A20/12 ,  Y02E10/28

Abstract: There is provided with a complex ocean power system combining ocean current power generation for generating electricity by forming a plurality of ocean current generators in front and rear of sluice structures of tidal power dams and sluice power generation for generating electricity by forming a plurality of ocean current generators in sluice conduits of the sluice structures, comprising: constructing barrages, which cross over the sea, to make up a lake; installing sluice structures of tidal power dams between the barrages 10 to generate electricity by changing a potential energy difference between seawaters caused by tides and ebbs to kinetic energy; installing ocean current generators in front and rear of the sluice structures and in the sluice conduits of the sluice structures to generate electricity by rotating turbine blades using the flow of the incoming seawater from a sea side into a lake side during flood tide and the flow of the seawater discharged from the lake side into the sea side during ebb tide; and installing sluice gates in the sluice structures 102, 210 to close and open the sluice conduits during flood tide and ebb tide.

Abstract translation: 提供了一个复杂的海洋电力系统，通过在潮汐发电大坝的闸门结构和水闸发电的前后形成多个洋流发电机，通过形成多个洋流来发电，组合发电的海流发电 闸闸结构的闸管中的发电机，包括：建造横过海面的拦河坝，组成湖泊; 通过改变由潮汐引起的海水与动能之间的潜在能量差异，在堰坝10之间安装潮汐力坝的闸门结构以发电; 在闸门结构的前后和水闸结构的闸管中安装海洋电流发电机，以便在洪潮期间使用海水从海边流入湖侧的涡轮叶片旋转涡轮叶片，并且流动 在潮水期间，海水从湖边排入海边; 并在闸门结构102,210中安装闸门，以在洪潮和潮汐潮期间关闭和打开闸门管道。