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    Gettering using voids formed by surface transformation
    1.
    发明申请
    Gettering using voids formed by surface transformation 失效
    使用由表面变换形成的空隙吸收

    公开(公告)号：US20070080335A1

    公开(公告)日：2007-04-12

    申请号：US11606503

    申请日：2006-11-30

    申请人： Leonard Forbes ,  Joseph Geusic

    发明人： Leonard Forbes ,  Joseph Geusic

    IPC分类号： H01L29/04 ,  H01L21/8222

    CPC分类号： H01L27/105 ,  H01L21/3223 ,  H01L21/324 ,  H01L27/108 ,  H01L29/78 ,  Y10S257/913

    摘要： One aspect of this disclosure relates to a semiconductor structure, comprising a gettering region proximate to a device region in a semiconductor wafer. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids through a surface transformation process. Each of the voids has an interior surface that includes dangling bonds such that the plurality of voids getter impurities from the at least one device region. The structure includes a transistor formed using the device region. The transistor includes a gate dielectric over the device region, a gate over the gate dielectric, and a first diffusion region and a second diffusion region formed in the device region. The first and second diffusion regions are separated by a channel region formed in the device region between the gate and the proximity gettering region.

    摘要翻译： 本公开的一个方面涉及一种半导体结构，其包括靠近半导体晶片中的器件区域的吸杂区域。 吸气区域通过表面变换过程包括精确确定的多个精确形成的空隙的布置。 每个空隙具有包括悬挂键的内表面，使得多个空隙从至少一个装置区域吸收杂质。 该结构包括使用该器件区形成的晶体管。 晶体管包括位于器件区域上的栅极电介质，栅极电介质上的栅极，以及形成在器件区域中的第一扩散区域和第二扩散区域。 第一和第二扩散区域由形成在栅极和接近吸气区域之间的器件区域中的沟道区域分开。

    Removal of copper oxides from integrated interconnects
    4.
    发明申请
    Removal of copper oxides from integrated interconnects 审中-公开

    公开(公告)号：US20060211251A1

    公开(公告)日：2006-09-21

    申请号：US11437565

    申请日：2006-05-19

    申请人： Joseph Geusic ,  Alan Reinberg

    发明人： Joseph Geusic ,  Alan Reinberg

    IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302 ,  C03C25/68

    CPC分类号： H01L21/02071 ,  C23G5/00 ,  H01L21/02074 ,  H01L21/31105 ,  H01L21/76814 ,  H01L21/76838 ,  H05K3/3489

    摘要： An apparatus and a method for photoreducing copper oxide layers from semiconductor wafers during the processes of forming interconnects in advanced IC manufacturing. The apparatus comprises a reaction chamber with a high intensity UV light source and a wafer holder in the chamber. The UV light source is made of arrays of microdischarge devices fabricated on a semiconductor wafer where each of the microdischarge devices has the structure of a hollow cathode. Multiple arrays of microdischarge devices can be assembled together to make a planar UV lamp so as to provide a sufficient area for the UV illumination. The wafer holder in the chamber is made rotatable for a better uniformity during the photoreduction process. A non-oxidizing gas is flowed into the chamber to prevent instant and subsequent oxidation on the copper surface.

    Gettering using voids formed by surface transformation
    5.
    发明申请
    Gettering using voids formed by surface transformation 审中-公开
    使用由表面变换形成的空隙吸收

    公开(公告)号：US20050029683A1

    公开(公告)日：2005-02-10

    申请号：US10931344

    申请日：2004-08-31

    申请人： Leonard Forbes ,  Joseph Geusic

    发明人： Leonard Forbes ,  Joseph Geusic

    IPC分类号： H01L21/322 ,  H01L21/324 ,  H01L29/78 ,  H01L21/76 ,  H01L23/58

    CPC分类号： H01L27/105 ,  H01L21/3223 ,  H01L21/324 ,  H01L27/108 ,  H01L29/78 ,  Y10S257/913

    摘要： One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is annealed such that the wafer undergoes a surface transformation to transform the arrangement of the plurality of holes into a predetermined arrangement of at least one empty space of a predetermined size within the wafer to form the gettering site. One aspect relates to a semiconductor wafer. In various embodiments, the wafer includes at least one device region, and at least one gettering region located proximate to the at least one device region. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids that are formed within the wafer using a surface transformation process. Other aspects and embodiments are provided herein.

    摘要翻译： 本公开的一个方面涉及在半导体晶片中产生吸杂位点的方法。 在各种实施例中，通过晶片的表面在半导体晶片中形成多个孔的预定布置。 将晶片退火，使得晶片进行表面变换，以将多个孔的布置转换成晶片内的预定尺寸的至少一个空的空间的预定布置，以形成吸杂位点。 一方面涉及半导体晶片。 在各种实施例中，晶片包括至少一个器件区域和位于至少一个器件区域附近的至少一个吸杂区域。 吸气区域包括使用表面变换过程在晶片内形成的多个精确形成的空隙的精确确定的布置。 本文提供了其它方面和实施例。

    Conductive material patterning methods
    7.
    发明申请
    Conductive material patterning methods 审中-公开
    导电材料图案化方法

    公开(公告)号：US20070105372A1

    公开(公告)日：2007-05-10

    申请号：US11644177

    申请日：2006-12-22

    申请人： Joseph Geusic ,  Alan Reinberg

    发明人： Joseph Geusic ,  Alan Reinberg

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76852 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32135 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L21/76888 ,  H05K3/02 ,  H05K3/105 ,  H05K3/108 ,  H05K2201/0175 ,  H05K2203/0315 ,  H05K2203/1142 ,  H05K2203/1157

    摘要： A pattering method includes providing a first material (e.g., copper) and transforming at a least a surface region of the first material to a second material (e.g., copper oxide). One or more portions of the second material (e.g., copper oxide) are converted to one or more converted portions of first material (e.g., copper) while one or more portions of the second material (e.g., copper oxide) remain. One or more portions of the remaining second material (e.g., copper oxide) are removed selectively relative to converted portions of first material (e.g., copper). Further, a thickness of the converted portions may be increased. Yet further, a diffusion barrier layer may be used for certain applications.

    摘要翻译： 图案化方法包括提供第一材料（例如铜）并在第一材料的至少一个表面区域转化为第二材料（例如氧化铜）。 第二材料（例如氧化铜）的一个或多个部分被转换成第一材料（例如铜）的一个或多个转换部分，同时保留第二材料（例如氧化铜）的一个或多个部分。 选择性地相对于第一材料（例如铜）的转化部分去除剩余的第二材料（例如，氧化铜）的一个或多个部分。 此外，可以增加转换部分的厚度。 此外，扩散阻挡层可以用于某些应用。

    Gettering using voids formed by surface transformation
    8.
    发明申请
    Gettering using voids formed by surface transformation 有权

    公开(公告)号：US20050250274A1

    公开(公告)日：2005-11-10

    申请号：US11167894

    申请日：2005-06-27

    申请人： Leonard Forbes ,  Joseph Geusic

    发明人： Leonard Forbes ,  Joseph Geusic

    IPC分类号： H01L21/322 ,  H01L21/324 ,  H01L29/78 ,  H01L21/8238

    CPC分类号： H01L27/105 ,  H01L21/3223 ,  H01L21/324 ,  H01L27/108 ,  H01L29/78 ,  Y10S257/913

    摘要： One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is annealed such that the wafer undergoes a surface transformation to transform the arrangement of the plurality of holes into a predetermined arrangement of at least one empty space of a predetermined size within the wafer to form the gettering site. One aspect relates to a semiconductor wafer. In various embodiments, the wafer includes at least one device region, and at least one gettering region located proximate to the at least one device region. The gettering region includes a precisely-determined arrangement of a plurality of precisely-formed voids that are formed within the wafer using a surface transformation process. Other aspects and embodiments are provided herein.