公开(公告)号：US20070105372A1

公开(公告)日：2007-05-10

申请号：US11644177

申请日：2006-12-22

申请人： Joseph Geusic ,  Alan Reinberg

发明人： Joseph Geusic ,  Alan Reinberg

IPC分类号： H01L21/44

CPC分类号： H01L21/76852 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32135 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L21/76888 ,  H05K3/02 ,  H05K3/105 ,  H05K3/108 ,  H05K2201/0175 ,  H05K2203/0315 ,  H05K2203/1142 ,  H05K2203/1157

摘要： A pattering method includes providing a first material (e.g., copper) and transforming at a least a surface region of the first material to a second material (e.g., copper oxide). One or more portions of the second material (e.g., copper oxide) are converted to one or more converted portions of first material (e.g., copper) while one or more portions of the second material (e.g., copper oxide) remain. One or more portions of the remaining second material (e.g., copper oxide) are removed selectively relative to converted portions of first material (e.g., copper). Further, a thickness of the converted portions may be increased. Yet further, a diffusion barrier layer may be used for certain applications.

摘要翻译： 图案化方法包括提供第一材料（例如铜）并在第一材料的至少一个表面区域转化为第二材料（例如氧化铜）。 第二材料（例如氧化铜）的一个或多个部分被转换成第一材料（例如铜）的一个或多个转换部分，同时保留第二材料（例如氧化铜）的一个或多个部分。 选择性地相对于第一材料（例如铜）的转化部分去除剩余的第二材料（例如，氧化铜）的一个或多个部分。 此外，可以增加转换部分的厚度。 此外，扩散阻挡层可以用于某些应用。

公开(公告)号：US20070003731A1

公开(公告)日：2007-01-04

申请号：US11168317

申请日：2005-06-29

申请人： Leonard Forbes ,  Paul Farrar ,  Alan Reinberg

发明人： Leonard Forbes ,  Paul Farrar ,  Alan Reinberg

IPC分类号： B32B3/02

CPC分类号： G11B7/2595 ,  G11B7/00455 ,  G11B7/24038 ,  G11B7/243

摘要： A structure for storing digital data is provided, with a high reflectance layer comprising a gold film formed over a semiconductor layer, and a plurality of low reflectance portions comprising a mixture of a gold material and a semiconductor material. The plurality of low reflectance portions have top surfaces comprising more semiconductor material than the gold material. The invention also provides a method of changing reflectance on a data storage disk, comprising irradiating a laser light beam onto a gold film formed over a semiconductor layer, and raising the temperature of the gold film above a eutectic temperature for a mixture of gold and the semiconductor layer.

摘要翻译： 提供一种用于存储数字数据的结构，具有包括形成在半导体层上的金膜的高反射率层和包括金材料和半导体材料的混合物的多个低反射率部分。 多个低反射率部分具有包括比金材料更多的半导体材料的顶表面。 本发明还提供了一种改变数据存储盘上的反射率的方法，包括将激光束照射到形成在半导体层上的金膜上，并将金膜的温度提高到高于共晶温度以用于金和 半导体层。

公开(公告)号：US20060246667A1

公开(公告)日：2006-11-02

申请号：US11456832

申请日：2006-07-11

申请人： Alan Reinberg

发明人： Alan Reinberg

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： The present invention includes a method for reducing random bit data loss in a memory circuit. The method comprises a semiconductor layer that has a surface. The semiconductor layer is exposed at an elevated temperature to an atmosphere comprising deuterium thereby forming a film on the semiconductor layer comprising deuterium. A memory circuit is fabricated on or within the semiconductor layer.

公开(公告)号：US20060141697A1

公开(公告)日：2006-06-29

申请号：US11358583

申请日：2006-02-21

申请人： Wendell Noble ,  Leonard Forbes ,  Alan Reinberg

发明人： Wendell Noble ,  Leonard Forbes ,  Alan Reinberg

IPC分类号： H01L21/8244

CPC分类号： H01L29/66787 ,  H01L21/2255 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823885 ,  H01L21/84 ,  H01L27/10876 ,  H01L27/10879 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/785 ,  H01L29/7851 ,  Y10S438/973

摘要： Improved methods and structures are provided that are lateral to surfaces with a (110) crystal plane orientation such that an electrical current of such structures is conducted in the direction. Advantageously, improvements in hole carrier mobility of approximately 50% can be obtained by orienting the structure's channel in a (110) plane such that the electrical current flow is in the direction. Moreover, these improved methods and structures can be used in conjunction with existing fabrication and processing techniques with minimal or no added complexity.

公开(公告)号：US06479379B2

公开(公告)日：2002-11-12

申请号：US09954605

申请日：2001-09-10

申请人： Alan Reinberg

发明人： Alan Reinberg

IPC分类号： H01L214763

CPC分类号： H01L23/485 ,  H01L21/76829 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for providing a self-aligned etch stop layer comprises the steps of providing a dielectric layer having a polycrystalline silicon (poly) plug formed therein. An aluminum layer is formed to contact the dielectric layer and the plug, then the structure is heated. Heating the aluminum and the poly results in the absorption of the aluminum overlying the plug into the poly, while the aluminum overlying the dielectric is not absorbed. The aluminum over the dielectric is oxidized which forms a self-aligned etch stop layer. Layers are formed over the aluminum oxide and are subsequently etched. The etch stops on the aluminum oxide and the poly plug.

公开(公告)号：US20070134841A1

公开(公告)日：2007-06-14

申请号：US11702356

申请日：2007-02-05

申请人： Alan Reinberg

发明人： Alan Reinberg

IPC分类号： H01L21/00

CPC分类号： H01L45/06 ,  H01L23/5252 ,  H01L45/1233 ,  H01L45/128 ,  H01L45/141 ,  H01L45/16 ,  H01L2924/0002 ,  Y10S438/90 ,  H01L2924/00

摘要： A contact for use with a memory element of a semiconductor device structure includes a conductive element and a thermal insulator component. The conductive element establishes an electrical path to the memory element, while the thermal insulator component thermally insulates the memory element. The thermal insulator component may reduce an amount of current required to change a conductivity state of the memory element, particularly when the memory element includes a so-called “phase change” element. Methods for fabricating such contacts are also disclosed.

摘要翻译： 与半导体器件结构的存储元件一起使用的触点包括导电元件和绝热元件。 导电元件建立到存储元件的电气路径，而绝热体部件使存储元件热绝缘。 热绝缘体部件可以减少改变存储元件的导电状态所需的电流量，特别是当存储元件包括所谓的“相变”元件时。 还公开了制造这种接触的方法。

公开(公告)号：US20050202674A1

公开(公告)日：2005-09-15

申请号：US11122155

申请日：2005-05-04

申请人： Alan Reinberg

发明人： Alan Reinberg

IPC分类号： H01L21/768 ,  H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76865 ,  H01L21/76801 ,  H01L21/76838 ,  H01L21/76841

摘要： A microelectronic device fabricating method includes providing a substrate having a beveled portion and forming a layer of structural material on the beveled portion. Some of the structural material can be removed from the beveled portion by anisotropic etching to form a device feature from the structural material. The device feature can be formed on the beveled portion as with a pair of spaced, adjacent barrier material lines that are substantially void of residual shorting stringers extending therebetween. Structural material can be removed from the beveled portion to form an edge defined feature on a substantially perpendicular edge of the substrate. The beveled portion and perpendicular edge can be part of a mandril. The mandril can be removed from the substrate after forming the edge defined feature.

公开(公告)号：US06404669B2

公开(公告)日：2002-06-11

申请号：US09739850

申请日：2000-12-18

申请人： Zhigiang Wu ,  Randhir PS Thakur ,  Alan Reinberg ,  Kirk Prall

发明人： Zhigiang Wu ,  Randhir PS Thakur ,  Alan Reinberg ,  Kirk Prall

IPC分类号： G11C1134

CPC分类号： H01L27/10808 ,  G11C11/404 ,  H01L27/108

摘要： The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.

摘要翻译： 本发明涉及一种存储单元，其包括存储节点，用于控制对存储节点的访问的开关装置，以及开关装置与存储节点之间的二极管。 还公开了一种用于控制通过开关装置从存储节点传输电荷的方法。

公开(公告)号：US6005801A

公开(公告)日：1999-12-21

申请号：US915425

申请日：1997-08-20

申请人： Zhiqiang (Jeff) Wu ,  Randhir P S Thakur ,  Alan Reinberg ,  Kirk Prall

发明人： Zhiqiang (Jeff) Wu ,  Randhir P S Thakur ,  Alan Reinberg ,  Kirk Prall

IPC分类号： G11C11/404 ,  H01L27/108 ,  G11C11/40

CPC分类号： H01L27/10808 ,  G11C11/404 ,  H01L27/108

摘要： The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.

公开(公告)号：US5973954A

公开(公告)日：1999-10-26

申请号：US226785

申请日：1999-01-07

申请人： Zhigiang (Jeff) Wu ,  Randhir P S Thakur ,  Alan Reinberg

发明人： Zhigiang (Jeff) Wu ,  Randhir P S Thakur ,  Alan Reinberg

IPC分类号： G11C11/404 ,  H01L27/108 ,  G11C11/34

CPC分类号： H01L27/10808 ,  G11C11/404 ,  H01L27/108

摘要： The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.