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    Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering
    5.
    发明申请
    Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering 审中-公开
    使用大功率脉冲磁控管溅射制造太阳能电池的方法

    公开(公告)号：US20100055826A1

    公开(公告)日：2010-03-04

    申请号：US12198732

    申请日：2008-08-26

    申请人： Dalong Zhong ,  James Neil Johnson ,  Xiaolan Zhang

    发明人： Dalong Zhong ,  James Neil Johnson ,  Xiaolan Zhang

    IPC分类号： H01L21/00

    CPC分类号： H01L31/0324 ,  C23C14/0629 ,  C23C14/086 ,  C23C14/3485 ,  C23C14/35 ,  H01L21/02439 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1836 ,  Y02E10/541

    摘要： A method of fabricating a solar cell is provided. The method includes depositing a transparent conductive contact layer on a surface of a substrate, where the transparent conductive contact layer is configured to act as a front electrode for the solar cell, depositing a window layer over the transparent conductive contact layer, depositing an absorber layer on the window layer, wherein the absorber layer and the window layer are oppositely doped and form a semiconductor junction, and where at least one of the window layer or the absorber layer is deposited by employing high power pulsed magnetron sputtering, and depositing an electrically conductive film on the semiconductor junction, wherein the electrically conductive film is configured to act as a back electrode layer for the solar cell.

    摘要翻译： 提供一种制造太阳能电池的方法。 该方法包括在衬底的表面上沉积透明导电接触层，其中透明导电接触层被配置为用作太阳能电池的前电极，在透明导电接触层上沉积窗口层，沉积吸收层 在窗口层上，其中吸收层和窗口层相对地掺杂并形成半导体结，并且其中通过使用高功率脉冲磁控溅射沉积窗口层或吸收层中的至少一个，并且沉积导电 膜，其中导电膜被配置为用作太阳能电池的背电极层。

    Method And Apparatus For A Semiconductor Structure
    7.
    发明申请
    Method And Apparatus For A Semiconductor Structure 审中-公开
    半导体结构的方法和装置

    公开(公告)号：US20080173347A1

    公开(公告)日：2008-07-24

    申请号：US11625841

    申请日：2007-01-23

    申请人： Bastiaan Arie Korevaar ,  James Neil Johnson

    发明人： Bastiaan Arie Korevaar ,  James Neil Johnson

    IPC分类号： H01L31/036 ,  H01L31/18

    CPC分类号： H01L31/1816 ,  H01L31/0236 ,  H01L31/036 ,  H01L31/03687 ,  H01L31/065 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1868 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

    摘要： One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.

    摘要翻译： 一个示例性实施例是半导体结构，其可以包括具有前表面和后表面的一种导电类型的半导体衬底，设置在半导体衬底的前表面上的第一半导体层，设置在半导体衬底的一部分上的第二半导体层 的半导体衬底的背表面的第三半导体层，以及设置在半导体衬底的背面的另一部分上的第三半导体层。 第二半导体层和第三半导体层中的每一个可以通过其深度从基本上本征的与衬底的界面逐渐分级到相对侧的基本导电，并且具有通过掺入一种或多种所选掺杂剂而获得的选择的导电类型 。

    Surface passivated photovoltaic devices
    8.
    发明授权
    Surface passivated photovoltaic devices 失效
    表面钝化光伏器件

    公开(公告)号：US07375378B2

    公开(公告)日：2008-05-20

    申请号：US11127648

    申请日：2005-05-12

    申请人： Venkatesan Manivannan ,  Abasifreke Udo Ebong ,  Jiunn-Ru Jeffrey Huang ,  Thomas Paul Feist ,  James Neil Johnson

    发明人： Venkatesan Manivannan ,  Abasifreke Udo Ebong ,  Jiunn-Ru Jeffrey Huang ,  Thomas Paul Feist ,  James Neil Johnson

    IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L31/078 ,  H01L31/02168 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/52 ,  Y02E10/547

    摘要： A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.

    摘要翻译： 提供了包括光伏电池的光伏器件。 光伏电池包括包含晶体半导体材料的发射极层和邻近发射极层设置的轻掺杂晶体衬底。 轻掺杂的晶体衬底和发射极层是相反掺杂的。 此外，光伏器件包括耦合到光伏电池的背面钝化结构。 该结构包括邻近轻掺杂晶体衬底设置的高掺杂背表面场层。 高度掺杂的背表面场层包括非晶或微晶半导体材料，其中高度掺杂的背表面场层和轻掺杂的晶体衬底被类似地掺杂，并且其中高掺杂背表面场层的掺杂水平高于 掺杂水平的轻掺杂晶体衬底。 此外，该结构还可以包括邻近轻掺杂晶体衬底设置的本征背表面钝化层，其中本征背表面钝化层包括非晶或微晶半导体材料。

    Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings
    9.
    发明授权
    Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings 失效
    低温等离子体沉积氢化无定形锗碳耐磨涂层

    公开(公告)号：US06844070B2

    公开(公告)日：2005-01-18

    申请号：US10232462

    申请日：2002-08-30

    申请人： James Neil Johnson ,  Kevin Warner Flanagan ,  George Theodore Dalakos

    发明人： James Neil Johnson ,  Kevin Warner Flanagan ,  George Theodore Dalakos

    IPC分类号： C23C16/30 ,  C23C16/32 ,  G02B1/10 ,  B32B9/00

    CPC分类号： C23C16/32 ,  C23C16/30 ,  G02B1/105 ,  G02B1/14 ,  Y10T428/265 ,  Y10T428/30

    摘要： A method of forming a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.

    摘要翻译： 提供了在红外（IR）透射材料如硫族化物的表面上形成氢化无定形锗碳（a-GeCx：H）膜的方法。 该方法包括将IR透射材料定位在平行板等离子体反应器的反应室中，然后在IR透射材料的表面上沉积氢化无定形锗碳（a-GeCx：H）膜。 在约130℃或更低的衬底温度下和在源自包含锗源，惰性气体和任选的氢的气体混合物的等离子体存在下进行沉积。 还提供了具有改善的耐磨性的光学透射组件，例如IR传感器和窗户。