发明授权
- 专利标题: Apparatus and systems for intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices
- 专利标题(中): 用于混合硫化镉层和碲化镉层用于薄膜光伏器件的装置和系统
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申请号: US13080029申请日: 2011-04-05
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公开(公告)号: US08349084B2公开(公告)日: 2013-01-08
- 发明人: James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
- 申请人: James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
- 申请人地址: US NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: US NY Schenectady
- 代理机构: Dority & Manning, P.A.
- 主分类号: C23C16/54
- IPC分类号: C23C16/54 ; C23C16/455 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
摘要:
An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.
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