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公开(公告)号：US09447489B2
公开(公告)日：2016-09-20
申请号：US13165298
申请日：2011-06-21
IPC分类号： H01L31/06 , C23C14/06 , H01L31/0296 , H01L31/073 , H01L31/0749 , C23C14/54 , H01L31/18 , C23C18/12
CPC分类号： C23C14/0629 , C23C14/548 , C23C18/1204 , C23C18/1279 , C23C18/1291 , H01L31/0296 , H01L31/073 , H01L31/0749 , H01L31/1828 , H01L31/1832 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.
摘要翻译： 本发明的一个方面包括制造光伏器件的方法。 该方法包括在窗口层上设置吸收层，其中吸收层包括第一区域和第二区域。 该方法包括将第一区域与窗口层相邻置于包含第一分压的氧的第一环境中; 以及在包括第二分压的氧的第二环境中将所述第二区域设置在所述第一区域上，其中所述第一分压大于所述第二分压。 本发明的一个方面包括光伏器件。
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公开(公告)号：US08847689B2
公开(公告)日：2014-09-30
申请号：US12711858
申请日：2010-02-24
申请人： Yu Zhao , Nathan M. Pletcher
发明人： Yu Zhao , Nathan M. Pletcher
IPC分类号： H03F3/04
CPC分类号： H03F1/0283 , H03F1/301 , H03F3/189
摘要： Techniques for improving linearity of amplifiers are described. In an exemplary design, an amplifier (e.g., a power amplifier) may include a plurality of transistors coupled in a stack and at least one diode. The plurality of transistors may receive and amplify an input signal and provide an output signal. The at least one diode may be operatively coupled to at least one transistor in the stack. Each diode may provide a variable bias voltage to an associated transistor in the stack. Each diode may have a lower voltage drop across the diode at high input power and may provide a higher bias voltage to the associated transistor at high input power. The at least one transistor may have higher gain at high input power due to the higher bias voltage from the at least one diode. The higher gain may improve the linearity of the amplifier.
摘要翻译： 描述了用于提高放大器线性度的技术。 在示例性设计中，放大器（例如，功率放大器）可以包括耦合在堆叠中的多个晶体管和至少一个二极管。 多个晶体管可以接收和放大输入信号并提供输出信号。 至少一个二极管可以可操作地耦合到堆叠中的至少一个晶体管。 每个二极管可以向堆叠中的相关联的晶体管提供可变偏置电压。 每个二极管可以在高输入功率下在二极管上具有较低的电压降，并且可以在高输入功率下向相关联的晶体管提供更高的偏置电压。 由于来自至少一个二极管的较高偏置电压，至少一个晶体管可能在高输入功率下具有更高的增益。 较高的增益可以提高放大器的线性度。
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4.发明授权Multi-antenna wireless device with power amplifiers having different characteristics 有权具有不同特性的功率放大器的多天线无线设备公开(公告)号：US08670797B2
公开(公告)日：2014-03-11
申请号：US13253003
申请日：2011-10-04
申请人： Bhushan Shanti Asuri , Yu Zhao
发明人： Bhushan Shanti Asuri , Yu Zhao
IPC分类号： H04M1/00
CPC分类号： H04B1/406 , H04B1/0064 , H04B1/0483
摘要： A wireless device with power amplifiers having different characteristics to support transmission on multiple antennas is disclosed. These power amplifiers may have different gain, different maximum output power levels, etc. in order to meet requirements of different wireless systems. In an exemplary design, an apparatus includes first and second power amplifiers having different characteristics. The first power amplifier amplifies a first input signal and provides a first output signal for a first antenna. The second power amplifier amplifies the first input signal or a second input signal and provides a second output signal for a second antenna, e.g., in a MIMO mode or a transmit diversity mode. Only the first or second power amplifier amplifies another input signal and provides another output signal to the first antenna, e.g., in a CDMA mode or a GSM mode.
摘要翻译： 具有功率放大器的无线设备具有不同的特性以支持多个天线上的传输。 这些功率放大器可能具有不同的增益，不同的最大输出功率等级，以满足不同无线系统的要求。 在示例性设计中，装置包括具有不同特征的第一和第二功率放大器。 第一功率放大器放大第一输入信号并提供用于第一天线的第一输出信号。 第二功率放大器放大第一输入信号或第二输入信号，并且例如以MIMO模式或发射分集模式为第二天线提供第二输出信号。 只有第一或第二功率放大器放大另一输入信号，并且例如以CDMA模式或GSM模式向第一天线提供另一输出信号。
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公开(公告)号：US08536950B2
公开(公告)日：2013-09-17
申请号：US12641228
申请日：2009-12-17
IPC分类号： H03F3/04
摘要： Exemplary techniques for performing impedance matching are described. In an exemplary embodiment, the apparatus may include an amplifier (e.g., a power amplifier) coupled to first and second matching circuits. The first matching circuit may include multiple stages coupled to a first node and may provide input impedance matching for the amplifier. The second matching circuit may include multiple stages coupled to a second node and may provide output impedance matching for the amplifier. At least one switch may be coupled between the first and second nodes and may bypass or select the amplifier. The first and second nodes may have a common impedance. The apparatus may further include a second amplifier coupled in parallel with the amplifier and further to the matching circuits. The second matching circuit may include a first input stage coupled to the amplifier, a second input stage coupled to the second amplifier, and a second stage coupled to the two input stages via switches.
摘要翻译： 描述了用于执行阻抗匹配的示例性技术。 在示例性实施例中，该装置可以包括耦合到第一和第二匹配电路的放大器（例如，功率放大器）。 第一匹配电路可以包括耦合到第一节点的多个级并且可以为放大器提供输入阻抗匹配。 第二匹配电路可以包括耦合到第二节点的多个级并且可以为放大器提供输出阻抗匹配。 至少一个开关可以耦合在第一和第二节点之间，并且可以旁路或选择放大器。 第一和第二节点可以具有公共阻抗。 该装置还可以包括与放大器并联并且进一步耦合到匹配电路的第二放大器。 第二匹配电路可以包括耦合到放大器的第一输入级，耦合到第二放大器的第二输入级，以及经由开关耦合到两个输入级的第二级。
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6.发明授权公开(公告)号：US08389807B2
公开(公告)日：2013-03-05
申请号：US12649673
申请日：2009-12-30
申请人： Zuo-Yu Zhao , Xinli E. Wu , Myoeng-Je Cho , Deping Xu
发明人： Zuo-Yu Zhao , Xinli E. Wu , Myoeng-Je Cho , Deping Xu
CPC分类号： C12N15/8209 , A01H1/04 , C12N15/8201 , C12N15/8205
摘要： A method for increasing efficiency of germplasm screening for transformability may include providing a plurality of lines of plant target tissue to be transformed, characterizing each of the lines to provide characterization data, the characterization data comprises DNA or nucleic acid delivery technique response data and tissue culture response data, eliminating one or more of the plurality of lines based on the characterization data without performing transformation of the plurality of lines, such that a subset of the plurality of lines remains, and performing transformation experiments on the subset of the plurality of lines. The method may also include selecting a DNA or nucleic acid delivery technique protocol and a tissue culture protocol prior to the characterization.
摘要翻译： 提高种质筛选效率的方法可包括提供要转化的多条植物靶组织，表征各条线以提供特征数据，表征数据包括DNA或核酸递送技术应答数据和组织培养 响应数据，基于所述表征数据消除所述多行中的一个或多个，而不执行所述多条线的变换，使得保留所述多条线的子集，并对所述多条线的所述子集执行变换实验。 该方法还可以包括在表征之前选择DNA或核酸递送技术方案和组织培养方案。
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公开(公告)号：US20130033532A1
公开(公告)日：2013-02-07
申请号：US13195075
申请日：2011-08-01
申请人： Yu Zhao , Tong Nam Samuel Low
发明人： Yu Zhao , Tong Nam Samuel Low
IPC分类号： B41J2/01
CPC分类号： B41J2/04548 , B41J29/38
摘要： A printer includes an energy storage device and a charger for charging the energy storage device and for providing a first DC voltage. The printer includes a first DC-to-DC voltage converter for converting the first DC voltage to a second DC voltage. The printer includes first printer electronics powered by the second DC voltage.
摘要翻译： 打印机包括能量存储装置和用于对能量存储装置进行充电并用于提供第一直流电压的充电器。 打印机包括用于将第一DC电压转换为第二DC电压的第一DC-DC电压转换器。 打印机包括由第二直流电压供电的第一打印机电子装置。
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8.发明授权Apparatus and systems for intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices 有权用于混合硫化镉层和碲化镉层用于薄膜光伏器件的装置和系统公开(公告)号：US08349084B2
公开(公告)日：2013-01-08
申请号：US13080029
申请日：2011-04-05
IPC分类号： C23C16/54 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C14/0629 , C03C17/347 , C03C17/3476 , C03C17/3678 , C03C2217/91 , C23C14/24 , C23C14/56 , H01L21/02439 , H01L21/02557 , H01L21/02562 , H01L21/0262 , H01L21/02631 , H01L31/073 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.
摘要翻译： 提供了一种用于在光伏（PV）模块衬底上顺序沉积混合薄膜层和升华的源材料的装置以及相关联的工艺。 该方法可以包括将衬底引入沉积室，其中窗口层（例如，硫化镉层）在衬底的表面上。 可以向沉积室供应含硫气体。 此外，源蒸气可以供应到沉积室，其中源材料包括碲化镉。 含硫气体和源蒸气可以存在于沉积室内以在窗口层上形成混合层。 在一个具体实施方案中，例如，混合层通常可以具有增加的碲浓度和降低远离窗口层的硫浓度。
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10.发明申请公开(公告)号：US20120103261A1
公开(公告)日：2012-05-03
申请号：US13080029
申请日：2011-04-05
IPC分类号： H01L31/18 , C23C16/455 , C23C16/448
CPC分类号： C23C14/0629 , C03C17/347 , C03C17/3476 , C03C17/3678 , C03C2217/91 , C23C14/24 , C23C14/56 , H01L21/02439 , H01L21/02557 , H01L21/02562 , H01L21/0262 , H01L21/02631 , H01L31/073 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.
摘要翻译： 提供了一种用于在光伏（PV）模块衬底上顺序沉积混合薄膜层和升华的源材料的装置以及相关联的工艺。 该方法可以包括将衬底引入沉积室，其中窗口层（例如，硫化镉层）在衬底的表面上。 可以向沉积室供应含硫气体。 此外，源蒸气可以供应到沉积室，其中源材料包括碲化镉。 含硫气体和源蒸气可以存在于沉积室内以在窗口层上形成混合层。 在一个具体实施方案中，例如，混合层通常可以具有增加的碲浓度和降低远离窗口层的硫浓度。
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