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    Epitaxial structures and methods of forming the same
    1.
    发明授权
    Epitaxial structures and methods of forming the same 有权
    外延结构及其形成方法

    公开(公告)号：US08900915B2

    公开(公告)日：2014-12-02

    申请号：US13081257

    申请日：2011-04-06

    Applicant: Joerg Rockenberger ,  Fabio Zürcher ,  Mao Takashima

    Inventor： Joerg Rockenberger ,  Fabio Zürcher ,  Mao Takashima

    IPC: H01L31/078 ,  H01L21/02 ,  H01L31/068 ,  H01L31/18

    CPC classification number: H01L21/0237 ,  H01L21/02428 ,  H01L21/0243 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02628 ,  H01L21/02661 ,  H01L21/228 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film.

    Abstract translation: 公开了外延结构，制造外延结构的方法和结合这种外延结构的器件。 方法和结构采用液相IVA族半导体元件前体油墨（例如，包括环和/或聚硅烷）并且具有相对较好的膜质量（例如质地，密度和/或纯度）。 当IVA半导体元件前体油墨沉积在（多）晶体衬底表面上时，IVA半导体元件前体油墨形成外延膜或特征，并充分加热以使IVA族半导体前体膜或特征采用衬底表面的（多）晶体结构。 结合包括本外延结构的选择性发射极的器件相对于具有选择性发射极的器件而言，具有提高的功率转换效率，由于改善的膜质量和/或在外延膜和 在电影上形成的触点。

    Printed dopant layers
    2.
    发明授权
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号：US08304780B2

    公开(公告)日：2012-11-06

    申请号：US12797274

    申请日：2010-06-09

    Applicant: Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

    Inventor： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

    IPC: H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

    CPC classification number: H01L21/316 ,  H01L21/02211 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/3165 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78621

    Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

    Abstract translation: 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

    Printed dopant layers
    3.
    发明授权
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号：US07767520B2

    公开(公告)日：2010-08-03

    申请号：US11888949

    申请日：2007-08-03

    Applicant: Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

    Inventor： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

    IPC: H01L21/8242

    CPC classification number: H01L21/316 ,  H01L21/02211 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/3165 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78621

    Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

    Abstract translation: 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

    Printed Dopant Layers
    5.
    发明申请
    Printed Dopant Layers 有权
    印刷掺杂层

    公开(公告)号：US20140094004A1

    公开(公告)日：2014-04-03

    申请号：US13633816

    申请日：2012-10-02

    Applicant: Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

    Inventor： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zürcher

    IPC: H01L21/336

    CPC classification number: H01L27/1292 ,  H01L29/66757

    Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

    Abstract translation: 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

    Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
    9.
    发明授权
    Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权
    形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法

    公开(公告)号：US07314513B1

    公开(公告)日：2008-01-01

    申请号：US10949013

    申请日：2004-09-24

    Applicant: Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

    Inventor： Fabio Zürcher ,  Wenzhuo Guo ,  Joerg Rockenberger ,  Vladimir K. Dioumaev ,  Brent Ridley ,  Klaus Kunze ,  James Montague Cleeves

    IPC: C09D183/16

    CPC classification number: H01L21/02576 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628

    Abstract: Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”

    Abstract translation: 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。

    Metal inks for improved contact resistance
    10.
    发明授权
    Metal inks for improved contact resistance 有权
    用于改善接触电阻的金属油墨

    公开(公告)号：US08853677B1

    公开(公告)日：2014-10-07

    申请号：US13162193

    申请日：2011-06-16

    Applicant: Joerg Rockenberger ,  Yu Chen ,  Fabio Zürcher ,  Scott Haubrich

    Inventor： Joerg Rockenberger ,  Yu Chen ,  Fabio Zürcher ,  Scott Haubrich

    IPC: H01L29/08

    CPC classification number: H01L21/28518 ,  C09D11/52 ,  H01L21/288 ,  H01L21/76838 ,  H01L29/456 ,  H01L29/458

    Abstract: Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.

    Abstract translation: 公开了金属油墨组合物，形成这种组合物的方法，以及形成导电层的方法。 油墨组合物包括本体金属，过渡金属源和有机溶剂。 过渡金属源可以是能够形成硅化物的过渡金属，其量为0.01至50at。 过渡金属相对于本体金属的％。 导电结构可以使用这样的油墨组合物，通过在基底上形成含硅层，在含硅层上印刷金属油墨组合物，并固化组合物。 本发明的金属油墨具有高导电性并与硅形成低电阻接触，并减少制造集成电路所需的油墨数量和印刷步骤。

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