Surveillance Devices with Multiple Capacitors
    2.
    发明申请
    Surveillance Devices with Multiple Capacitors 有权
    具有多个电容器的监控设备

    公开(公告)号:US20140091909A1

    公开(公告)日:2014-04-03

    申请号:US13632745

    申请日:2012-10-01

    IPC分类号: G06K7/01 H01G7/00 G06K19/077

    CPC分类号: H01G4/40 H01G4/38

    摘要: The present invention relates to surveillance and/or identification devices having capacitors connected in parallel or in series, and methods of making and using such devices. Devices with capacitors connected in parallel, where one capacitor is fabricated with a relatively thick capacitor dielectric and another is fabricated with a relatively thin capacitor dielectric achieve both a high-precision capacitance and a low breakdown voltage for relatively easy surveillance tag deactivation. Devices with capacitors connected in series result in increased lateral dimensions of a small capacitor. This makes the capacitor easier to fabricate using techniques that may have relatively limited resolution capabilities.

    摘要翻译: 本发明涉及具有并联或串联连接的电容器的监视和/或识别装置以及制造和使用这些装置的方法。 具有并联连接电容器的器件,其中一个电容器用相对较厚的电容器电介质制造,另一个电容器由相对薄的电容器电介质制成,实现了高精度电容和低击穿电压,以便相对容易的监视标签去激活。 具有串联连接的电容器的装置增加了小电容器的横向尺寸。 这使得使用可能具有相对有限的分辨能力的技术来制造电容器更容易。

    Printed dopant layers
    4.
    发明授权
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号:US08304780B2

    公开(公告)日:2012-11-06

    申请号:US12797274

    申请日:2010-06-09

    摘要: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

    摘要翻译: 一种用于制造诸如MOS晶体管的电子器件的方法,包括以下步骤:在电功能衬底上形成多个半导体岛,在第一半导体岛子集上或第二子体上印刷第一介电层, 在半导体岛的第二子集上或之上,以及退火。 第一介电层包含第一掺杂剂,并且(任选的)第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层,半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中,并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

    Printed dopant layers
    6.
    发明授权
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号:US07767520B2

    公开(公告)日:2010-08-03

    申请号:US11888949

    申请日:2007-08-03

    IPC分类号: H01L21/8242

    摘要: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

    摘要翻译: 一种用于制造诸如MOS晶体管的电子器件的方法,包括以下步骤:在电功能衬底上形成多个半导体岛,在第一半导体岛子集上或第二子体上印刷第一介电层, 在半导体岛的第二子集上或之上,以及退火。 第一介电层包含第一掺杂剂,并且(任选的)第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层,半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中,并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

    Printed Non-Volatile Memory
    7.
    发明申请
    Printed Non-Volatile Memory 有权
    印刷非易失性存储器

    公开(公告)号:US20100163962A1

    公开(公告)日:2010-07-01

    申请号:US12723542

    申请日:2010-03-12

    IPC分类号: H01L29/788

    摘要: A nonvolatile memory cell is disclosed, having first and second semiconductor islands at the same horizontal level and spaced a predetermined distance apart, the first semiconductor island providing a control gate and the second semiconductor island providing source and drain terminals; a gate dielectric layer on at least part of the first semiconductor island; a tunneling dielectric layer on at least part of the second semiconductor island; a floating gate on at least part of the gate dielectric layer and the tunneling dielectric layer; and a metal layer in electrical contact with the control gate and the source and drain terminals. In one advantageous embodiment, the nonvolatile memory cell may be manufactured using an “all-printed” process technology.

    摘要翻译: 公开了一种非易失性存储器单元,其具有在相同水平位置处并且间隔开预定距离的第一和第二半导体岛,所述第一半岛具有提供控制栅极和所述第二半岛岛提供源极和漏极端子; 在所述第一半导体岛的至少一部分上的栅介质层; 在所述第二半导体岛的至少一部分上的隧道电介质层; 至少部分栅极电介质层和隧道电介质层上的浮栅; 以及与控制栅极以及源极和漏极端子电接触的金属层。 在一个有利的实施例中,可以使用“全印刷”工艺技术来制造非易失性存储单元。

    Printed dopant layers
    9.
    发明申请
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号:US20080042212A1

    公开(公告)日:2008-02-21

    申请号:US11888942

    申请日:2007-08-03

    IPC分类号: H01L27/092

    摘要: An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.

    摘要翻译: 一种电子器件,包括衬底,衬底上的多个第一半导体岛,衬底上的多个第二半导体岛,半导体岛的第一子集上的第一电介质膜,第二半导体岛上的第二电介质膜, 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂,第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造,从而能够在各种基板上实现高通量,低成本的电路制造。

    PLATED ANTENNA FOR HIGH FREQUENCY DEVICES
    10.
    发明申请
    PLATED ANTENNA FOR HIGH FREQUENCY DEVICES 失效
    高频器件的天线

    公开(公告)号:US20070262471A1

    公开(公告)日:2007-11-15

    申请号:US11749114

    申请日:2007-05-15

    摘要: A method of making a double-sided antenna for high frequency devices is discussed. The method includes forming metal patterns on both sides of a substrate having pre-formed connection holes. Preferably, the metal patterns are formed using a printing ink having a precursor and a solvent. In one embodiment, the metal patterns include coils which are formed on both sides of the substrate. In one embodiment, shunt bars are used to speed up the process of making the metal patterns. The shunt bars are punched out at the end of the process to electrically isolate the metal patterns.

    摘要翻译: 讨论了制造用于高频器件的双面天线的方法。 该方法包括在具有预先形成的连接孔的基板的两侧上形成金属图案。 优选地,使用具有前体和溶剂的印刷油墨形成金属图案。 在一个实施例中,金属图案包括形成在基板两侧的线圈。 在一个实施例中,分流棒用于加速制造金属图案的过程。 分流棒在过程结束时冲出,以电隔离金属图案。