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    Composition and Manufacturing Method
    3.
    发明申请
    Composition and Manufacturing Method 有权
    组成和制造方法

    公开(公告)号：US20110163397A1

    公开(公告)日：2011-07-07

    申请号：US12975090

    申请日：2010-12-21

    申请人： Andrew Joseph Detor ,  Reed Corderman ,  Christopher Keimel ,  Marco Aimi

    发明人： Andrew Joseph Detor ,  Reed Corderman ,  Christopher Keimel ,  Marco Aimi

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： C25D7/00 ,  C25D1/003 ,  C25D3/562 ,  C25D5/02 ,  C25D5/022 ,  C25D5/48 ,  C25D5/50 ,  C25D7/123 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0052 ,  H01H2001/0084 ,  H01L2924/01079 ,  H05K13/0486 ,  H05K2201/0355 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/708 ,  Y10T29/49 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49155

    摘要： A device includes a substrate (308) and a metallic layer (336) formed over the substrate (308) with a deposition process for which the metallic layer (336) is characterizable as having a pre-determinable as-deposited defect density. As a result of a fabrication process, the defect density of the metallic layer (336) is reduced relative to the pre-determinable as-deposited defect density of the same layer (336) or another layer having like composition and which is formed under like deposition conditions. In a related method, a substrate (308) is provided and a removable layer (330) is formed over the substrate (308). A metallic layer (336) is formed over the removable layer (330) and is patterned and etched to define a structure over the removable layer (330). The removable layer (330) is removed, and the metallic layer (336) is heated for a time beyond that necessary for bonding of a hermetic sealing cap (340) thereover.

    摘要翻译： 一种器件包括通过沉积工艺形成在衬底（308）上方的衬底（308）和金属层（336），金属层（336）可以将金属层（336）表征为具有可预定的沉积缺陷密度。 作为制造工艺的结果，金属层（336）的缺陷密度相对于相同层（336）或具有类似组成的另一层的可预先确定的沉积缺陷密度降低，并且形成在类似 沉积条件。 在相关方法中，提供衬底（308），并且在衬底（308）之上形成可移除层（330）。 金属层（336）形成在可移除层（330）上方并被图案化和蚀刻以限定可移除层（330）上的结构。 去除可移除层（330），并且将金属层（336）加热超过其上的气密密封盖（340）的粘合所需的时间。

    Gating voltage control system and method for electrostatically actuating a micro-electromechanical device
    5.
    发明授权
    Gating voltage control system and method for electrostatically actuating a micro-electromechanical device 有权
    门电压控制系统和静电驱动微机电装置的方法

    公开(公告)号：US07473859B2

    公开(公告)日：2009-01-06

    申请号：US11622483

    申请日：2007-01-12

    申请人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    发明人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    IPC分类号： H01H51/22

    CPC分类号： H01H59/0009 ,  H01H47/22 ,  Y10T307/937

    摘要： A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.

    摘要翻译： 提供了门控电压控制系统和方法，用于静电致动微机电系统（MEMS）装置，例如MEMS开关。 该装置可以包括静电响应致动器，其可通过间隙移动，以将装置致动到对应于第一致动状态（例如，闭合开关状态）和第二致动状态（例如，开启状态）之一的相应致动状态， 。 门控电压控制系统可以包括电耦合到该器件的栅极端子以施加选通电压的驱动电路。 门控电压控制系统还可以包括电耦合到驱动电路的控制器，以根据门控电压控制顺序控制施加到门控端子的门控电压。 门控电压控制序列可以包括用于将门控电压升高到电压电平的第一间隔，用于产生足以通过由致动器穿过的间隙的一部分来加速致动器以达到相应的致动状态的静电力。 门控电压控制序列还可以包括用于将门控电压降低到足以减小作用在可移动致动器上的静电力的水平的第二间隔。 这允许减小致动器接合接触件以建立第一致动条件的力的量，或者避免致动器在达到第二致动状态时的过冲位置。

    Gating Voltage Control System And Method For Electrostatically Actuating A Micro-Electromechanical Device
    10.
    发明申请
    Gating Voltage Control System And Method For Electrostatically Actuating A Micro-Electromechanical Device 有权
    静电驱动微机电装置门控电压控制系统及方法

    公开(公告)号：US20080169707A1

    公开(公告)日：2008-07-17

    申请号：US11622483

    申请日：2007-01-12

    申请人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    发明人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    IPC分类号： H01H9/54

    CPC分类号： H01H59/0009 ,  H01H47/22 ,  Y10T307/937

    摘要： A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.

    摘要翻译： 提供了门控电压控制系统和方法，用于静电致动微机电系统（MEMS）装置，例如MEMS开关。 该装置可以包括静电响应致动器，其可通过间隙移动，以将装置致动到对应于第一致动状态（例如，闭合开关状态）和第二致动状态（例如，开启状态）之一的相应致动状态， 。 门控电压控制系统可以包括电耦合到该器件的栅极端子以施加选通电压的驱动电路。 门控电压控制系统还可以包括电耦合到驱动电路的控制器，以根据门控电压控制顺序控制施加到门控端子的门控电压。 门控电压控制序列可以包括用于将门控电压升高到电压电平的第一间隔，用于产生足以通过由致动器穿过的间隙的一部分来加速致动器以达到相应的致动状态的静电力。 门控电压控制序列还可以包括用于将门控电压降低到足以减小作用在可移动致动器上的静电力的水平的第二间隔。 这允许减小致动器接合接触件以建立第一致动条件的力的量，或者避免致动器在达到第二致动状态时的过冲位置。