公开(公告)号：US5286974A

公开(公告)日：1994-02-15

申请号：US962250

申请日：1992-10-16

Applicant: Andrew R. Walker ,  Simon C. Page

Inventor： Andrew R. Walker ,  Simon C. Page

IPC: G01N23/225 ,  G01Q30/02 ,  G21K5/04 ,  H01J37/02 ,  H01J37/20 ,  H01J37/252 ,  H01J37/285 ,  H01J49/08 ,  H01J49/44

CPC classification number: H01J37/026 ,  H01J37/285

Abstract: A charged particle energy analyser has a magnetic lens such as a snorkel-type lens and a source for directing ionising radiation onto a specimen causing charged particles to be emitted from its surface. The specimen is immersed in the magnetic imaging field of the magnetic lens so that particles having energies in a predetermined energy range are brought to a focus, the energies of the focussed particles being analysed by an energy analyser. An electrode arrangement is provided for enabling the magnetic imaging field of the magnetic lens to utilise unfocussed particles to cause charge neutralisation of the specimen. Alternatively, charged particles from a source are subjected to an electric field which is transverse to the optical axis of the magnetic lens and are guided onto the specimen by the magnetic imaging field of the magnetic lens.

Abstract translation: 带电粒子能量分析仪具有诸如浮潜型透镜的磁性透镜和用于将电离辐射引导到试样上的源，从而使带电粒子从其表面发射。 将样品浸入磁性透镜的磁性成像领域，使具有预定能量范围内的能量的粒子聚焦，由能量分析仪分析聚焦粒子的能量。 提供了一种电极装置，用于使得磁性透镜的磁性成像领域能够利用未被聚焦的颗粒来引起样品的电荷中和。 或者，来自源极的带电粒子经受横向于磁性透镜的光轴的电场，并通过磁性透镜的磁性成像场被引导到样品上。

公开(公告)号：US5138169A

公开(公告)日：1992-08-11

申请号：US735532

申请日：1991-07-26

Applicant: Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

Inventor： Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

IPC: G21K5/04 ,  H01J37/02 ,  H01J37/05 ,  H01J37/073 ,  H01J37/252 ,  H01J37/30 ,  H01J37/317 ,  H01J49/08

CPC classification number: H01J37/05 ,  H01J37/026 ,  H01J37/073

Abstract: There is disclosed a method of irradiating low-energy electrons that has the steps of irradiating a primary electron beam from a primary electron beam irradiation portion onto a secondary electron emission portion to emit a secondary electron beam, accelerating the emitted secondary electron beam, removing high-energy components from that accelerated secondary beam, and decelerating the secondary electron beam without the high-energy components into a focus. And there is also disclosed an apparatus for irradiating low-energy electron that has a primary electron beam irradiating section, a secondary electron emitting section which receives the primary electron beam and emits a secondary electron beam, a secondary electron beam accelerating section, energy analyzing section which removes high-energy components from the accelerated secondary electron beam, to obtain low-energy secondary electrons, and deceleration section for decelerating the low-energy secondary electrons into a focus.

公开(公告)号：US5126576A

公开(公告)日：1992-06-30

申请号：US626897

申请日：1990-12-13

Applicant: Michael T. Wauk, II ,  Bernard Woods ,  Jose-Antonio Marin ,  Nicholas J. Bright

Inventor： Michael T. Wauk, II ,  Bernard Woods ,  Jose-Antonio Marin ,  Nicholas J. Bright

IPC: C23C14/48 ,  G01T1/29 ,  H01J37/02 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0045 ,  H01J2237/304

Abstract: Method and apparatus for the control of the rate of emission of electrons added to an ion implantation beam to neutralize charging effects on semiconductor wafers being processed. A net charging current, or equivalent voltage, is sensed continuously, but is sampled only when a selected wafer, or multiple selected wafers, are positioned to receive the entire cross section of the ion beam. The sampled charging current is used to control the addition of charge-neutralizing electrons to the ion beam, thereby eliminating problems that ensue from the use of an averaged charging current that is sensed without regard to the relative beam position or the number of wafers being processed.

Abstract translation: 用于控制添加到离子注入束的电子发射速率以中和对正在处理的半导体晶片的充电效应的方法和装置。 净充电电流或等效电压被连续地感测，但是仅当所选择的晶片或多个所选择的晶片被定位成接收离子束的整个横截面时才进行采样。 采样的充电电流用于控制向离子束添加电荷中和电子，从而消除了使用感测到的平均充电电流引起的问题，而不考虑相对光束位置或正在处理的晶片数量 。

公开(公告)号：US5072125A

公开(公告)日：1991-12-10

申请号：US592659

申请日：1990-10-04

Applicant: Koichiro Nakanishi ,  Haruhisa Fujii ,  Hirotaka Muto

Inventor： Koichiro Nakanishi ,  Haruhisa Fujii ,  Hirotaka Muto

IPC: H01J37/02

CPC classification number: H01J37/026 ,  H01J2237/0045 ,  H01J2237/31701

Abstract: An ion implanter has a sample table on which a sample is placed, and means for injecting ions into the sample by applying an ion beam to the sample on the sample table. The ion implanter has magnetic field applying means for generating radial magnetic fields on the surface of the sample from near the center of the sample to outside of the outer periphery of the sample. The secondary electrons generated when the ion beam irradiates the sample table or the sample, including the secondary electrons generated from the sample table near the outer periphery of the sample, are trapped in the magnetic fields and transferred to the central portion of the sample. The secondary electrons are attracted by the electrostatic charge of the ions injected to the surface of the sample and recombine with the ions. Consequently, the electrostatic charge on the surface of the sample is decreased, preventing generation of device defects caused by electrostatic discharge damage.

Abstract translation: 离子注入机具有放置样品的样品台，以及通过向样品台上的样品施加离子束将离子注入样品的装置。 离子注入机具有磁场施加装置，用于从样品中心附近在样品的外周附近产生径向磁场。 当离子束照射样品台或样品时产生的二次电子，包括从样品外周附近的样品台产生的二次电子被捕获在磁场中并转移到样品的中心部分。 二次电子被注入到样品表面的离子的静电荷吸引，并与离子重新结合。 因此，样品表面上的静电电荷减少，防止由静电放电损伤引起的器件缺陷的产生。

公开(公告)号：US4976843A

公开(公告)日：1990-12-11

申请号：US474348

申请日：1990-02-02

Applicant: Billy W. Ward ,  David Edwards, Jr. ,  Robert A. Casella

Inventor： Billy W. Ward ,  David Edwards, Jr. ,  Robert A. Casella

IPC: B23K15/06 ,  H01J37/02 ,  H01J37/09

CPC classification number: B23K15/06 ,  H01J37/026 ,  H01J37/09 ,  H01J2237/31749

Abstract: An apparatus is described for allowing an ion beam and an electron beam to travel toward a predetermined region of a substrate surface during the sputter etching and imaging of insulating and other targets while preventing deflection of the electron beam by sources of stray electrostatic fields on the substrate surface. A metal shield is provided having a funnel-shaped portion leading to an orifice. The incident finely focused ion beam, together with the electron beam, which is used to neutralize the charge created by the incident ion beam, pass to the target through the orifice. The shield also physically supports a gas injection needle that injects a gas through the orifice toward the predetermined region.

Abstract translation: 描述了一种装置，用于在溅射蚀刻和绝缘和其它目标的成像期间允许离子束和电子束朝向衬底表面的预定区域行进，同时防止电子束由衬底上的杂散静电场的源偏转 表面。 设置有通向孔的漏斗形部分的金属屏蔽。 与用于中和由入射离子束产生的电荷的电子束一起入射的精细聚焦离子束通过孔传递到靶。 护罩还物理地支撑气体注射针，其将气体通过孔朝向预定区域注入。

公开(公告)号：US4939360A

公开(公告)日：1990-07-03

申请号：US310917

申请日：1989-02-16

Applicant: Katsuhiko Sakai

Inventor： Katsuhiko Sakai

IPC: H01J37/20 ,  H01J37/02 ,  H01J37/04 ,  H01J37/317

CPC classification number: H01J37/026

Abstract: A particle beam irradiating apparatus including a particle beam irradiating device for irradiating a charged particle beam such as ions or electrons to a specimen. A charged particle source is included for irradiating an electron beam to the specimen which is positively charged or an ion beam to the specimen which is negatively charged so as to neutralize the specimen, and a voltage supply is include for applying a bias voltage difference not more than 10 V between the charged particle source and the specimen. As the specimen is not charged with a high voltage, the specimen does not break down.The particle beam irradiating apparatus is effectively used in an electron microscope, an electron beam lithography system, an ion implanter, an ion microprobe analyzer, a secondary ion mass spectrometer.

Abstract translation: 一种粒子束照射装置，其包括用于向样本照射诸如离子或电子的带电粒子束的粒子束照射装置。 包括带电粒子源，用于向带正电荷的样品照射电子束或将带有负电荷的样品的离子束照射到中和样本，并且电压源包括用于施加不超过 带电粒子源与样品之间的电压高于10 V。 由于样品没有高电压充电，样品不会分解。 粒子束照射装置有效地用于电子显微镜，电子束光刻系统，离子注入机，离子微探针分析仪，二次离子质谱仪中。

公开(公告)号：US4886971A

公开(公告)日：1989-12-12

申请号：US165957

申请日：1988-03-09

Applicant: Yasushi Matsumura ,  Akira Shuhara ,  Shigeo Sasaki ,  Kazumi Fukumoto ,  Hitoshi Takeya

Inventor： Yasushi Matsumura ,  Akira Shuhara ,  Shigeo Sasaki ,  Kazumi Fukumoto ,  Hitoshi Takeya

IPC: G01Q30/20 ,  G01Q70/14 ,  G21K5/04 ,  H01J37/02

CPC classification number: G21K5/04 ,  H01J37/026

Abstract: In an ion beam irradiating apparatus, a specified ion beam is first deflected in a deflection direction perpendicular to an ion beam orbit by an ion beam deflector. The deflected ion beam is neutralized by a thermoelectron beam emitted from a filament of an ion neutralizer. An electrode is employed to control the supply of the thermoelectron beam to the deflected ion beam. Both the filament and control electrode elongated along the deflection direction surround the deflected ion beam traveled along the ion beam orbit.

Abstract translation: 在离子束照射装置中，通过离子束偏转器，指定的离子束首先在与离子束轨道垂直的偏转方向上偏转。 偏转的离子束被从离子中和器的细丝发射的热电子束中和。 采用电极来控制向被偏转的离子束供应热电子束。 沿着偏转方向细长的灯丝和控制电极围绕沿着离子束轨道行进的偏转的离子束。

公开(公告)号：US4424103A

公开(公告)日：1984-01-03

申请号：US481553

申请日：1983-04-04

Applicant: Barrett E. Cole

Inventor： Barrett E. Cole

IPC: C23C14/46 ,  H01J37/02 ,  H01J37/34 ,  C23C15/00

CPC classification number: C23C14/46 ,  H01J37/026 ,  H01J37/34

Abstract: Disclosed is a method and apparatus for thin film deposition comprising bombarding a target obliquely in a vacuum chamber with a linear ion gun. The linear ion gun generates an ion beam which impacts the target over an area having a width substantially greater than a height. Target material in the impacted area is sputtered. The sputtered target material is deposited onto a surface by translating the surface at a controlled rate through the sputtered material.

Abstract translation: 公开了一种用于薄膜沉积的方法和装置，其包括用线性离子枪在真空室中倾斜地轰击靶。 线性离子枪产生离子束，该离子束在具有基本上大于高度的宽度的区域上撞击靶。 冲击区域中的目标材料被溅射。 溅射的靶材料通过溅射材料以受控的速率平移表面而沉积在表面上。

公开(公告)号：US4413302A

公开(公告)日：1983-11-01

申请号：US057693

申请日：1979-07-16

Applicant: Uwe Maixner ,  Dieter Milferstaedt

Inventor： Uwe Maixner ,  Dieter Milferstaedt

IPC: H05F1/02 ,  C23C8/24 ,  C23C14/06 ,  C23C16/34 ,  F04D19/04 ,  H01H1/021 ,  H01J37/02 ,  H05F3/02 ,  H01J43/28

CPC classification number: H01J37/026 ,  H01H1/021 ,  H05F3/02 ,  Y10T428/12576

Abstract: The invention relates to a structural member made from a metallic materialaving an upper surface exposed to dangers of electric charge accumulations during operation in an apparatus such as a high vacuum apparatus operating with a charge carrying beam wherein the upper surface is formed with a conductive or semiconductive compound of the metallic material which is also present in the body of the structural member and is in electrical contact with the body of the structural member, thereby preventing undesirable charge accumulation on the surface.

Abstract translation: 本发明涉及一种由金属材料制成的结构件，其上表面在操作期间暴露于电荷积聚的危险，在诸如用电荷承载梁操作的高真空装置的装置中，其中上表面形成有导电或 金属材料的半导体化合物也存在于结构构件的主体中并与结构构件的主体电接触，从而防止表面上不期望的电荷积聚。

公开(公告)号：US3699334A

公开(公告)日：1972-10-17

申请号：US3699334D

申请日：1969-06-16

Applicant: KOLLSMAN INSTR CORP

Inventor： COHEN MURRAY F ,  TARASEVICH MICHAEL

IPC: H01J37/02 ,  H01J37/30 ,  H01J37/304 ,  H01J37/28

CPC classification number: H01J37/3005 ,  G05B2219/42251 ,  G05B2219/43147 ,  H01J37/026 ,  H01J37/304

Abstract: A process and apparatus for controllably eroding the surface of hard materials such as fused quartz, glass, metals and ceramics by the bombardment of the positive ions. Focused argon ions accelerated by potentials of up to 120,000 volts and with a constant beam current are controlled in direction to cause surface erosion of a workpiece to accuracies of up to one-one hundredth of a wavelength of green light. The workpiece is moved at a controlled rate in combination with the control of the beam direction to obtain a controlled erosion pattern over the surface of the workpiece. In another embodiment, an intensity modulated beam current is used. An electron beam is directed at the workpiece in a pattern which surrounds the ion beam to prevent the building up of a positive charge on the work surface. The progress of the erosion is observed and measured by an interferometer system. The movement of the ion beam and workpiece can follow a programmed automatic sequence.

Abstract translation: 用于通过轰击正离子可控地侵蚀诸如熔融石英，玻璃，金属和陶瓷的硬质材料的表面的方法和装置。 通过高达120,000伏特的电压加速并且具有恒定的束电流的聚焦的氩离子被控制在使得工件的表面侵蚀的精确度达到绿光波长的百分之一点的方向上。 工件以受控的速度与光束方向的控制相结合地移动，以在工件的表面上获得受控的侵蚀图案。 在另一实施例中，使用强度调制束电流。 电子束以围绕离子束的图案指向工件，以防止在工作表面上积累正电荷。 通过干涉仪系统观察和测量侵蚀的进展。 离子束和工件的移动可以遵循编程的自动序列。