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121 条记录 (耗时 0.032 秒)

    MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
    82.
    发明申请
    MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT 有权
    带补偿元件的磁性隧道接头

    公开(公告)号：US20110019465A1

    公开(公告)日：2011-01-27

    申请号：US12899645

    申请日：2010-10-07

    申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

    发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

    IPC分类号： G11C11/00

    CPC分类号： G11C11/161

    摘要： A magnetic tunnel junction having a compensation element is disclosed. The magnetic tunnel junction includes a synthetic antiferromagnetic reference element, and a synthetic antiferromagnetic compensation element having an opposite magnetization moment to a magnetization moment of the synthetic antiferromagnetic reference element. A free magnetic layer is between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

    摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括合成反铁磁参考元件和具有与合成反铁磁参考元件的磁化矩相反的磁化力矩的合成反铁磁补偿元件。 合成反铁磁参考元件和合成反铁磁补偿元件之间的自由磁性层，并且电绝缘和非磁性隧道势垒层将自由磁性层与合成反铁磁参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

    Resistive Sense Memory with Complementary Programmable Recording Layers
    84.
    发明申请
    Resistive Sense Memory with Complementary Programmable Recording Layers 审中-公开
    具有互补可编程记录层的电阻感知存储器

    公开(公告)号：US20100254174A1

    公开(公告)日：2010-10-07

    申请号：US12416976

    申请日：2009-04-02

    申请人： Yuankai Zheng ,  Xiaohua Lou ,  Zheng Gao ,  Wei Tian ,  Dimitar V. Dimitrov ,  Dexin Wang

    发明人： Yuankai Zheng ,  Xiaohua Lou ,  Zheng Gao ,  Wei Tian ,  Dimitar V. Dimitrov ,  Dexin Wang

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C7/00

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1673

    摘要： A resistive sense memory and method of writing data thereto. In accordance with various embodiments, the resistive sense memory comprises a first reference layer with a fixed magnetic orientation in a selected direction coupled to a first tunneling barrier, a second reference layer with a fixed magnetic orientation in the selected direction coupled to a second tunneling barrier, and a recording structure disposed between the first and second tunneling barriers comprising first and second free layers. A selected logic state is written to the resistive sense memory by applying a programming input to impart complementary first and second programmed magnetic orientations to the respective first and second free layers.

    摘要翻译： 一种电阻读出存储器及其数据写入方法。 根据各种实施例，电阻式感测存储器包括在耦合到第一隧道势垒的选定方向上具有固定磁性取向的第一参考层，在所选择的方向上具有固定的磁性取向的第二参考层，其耦合到第二隧道势垒 以及设置在第一和第二隧穿屏障之间的记录结构，包括第一和第二自由层。 所选择的逻辑状态通过施加编程输入来写入电阻式读出存储器，以将互补的第一和第二编程磁性取向传递给相应的第一和第二自由层。

    Ferroelectric memory using multiferroics
    87.
    发明授权
    Ferroelectric memory using multiferroics 失效
    铁电记忆使用多铁性

    公开(公告)号：US07700985B2

    公开(公告)日：2010-04-20

    申请号：US12144697

    申请日：2008-06-24

    申请人： Haiwen Xi ,  Wei Tian ,  Yang Li ,  Insik Jin ,  Song S. Xue

    发明人： Haiwen Xi ,  Wei Tian ,  Yang Li ,  Insik Jin ,  Song S. Xue

    IPC分类号： H01L29/94 ,  G11C16/06

    CPC分类号： G11C11/22 ,  H01F10/22 ,  H01F10/24 ,  H01L29/78391

    摘要： Ferroelectric memory using multiferroics is described. The multiferroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A data storage cell having a composite multiferroic layer is adjacent to the electrically insulating layer. The electrically insulating layer separated the data storage cell form the channel region. A control gate electrode is adjacent to the data storage cell. The data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer.

    摘要翻译： 描述了使用多铁性的铁电存储器。 多铁性存储器包括具有源区域，漏极区域和分离源极区域和漏极区域的沟道区域的衬底。 电绝缘层与源极区，漏极区和沟道区相邻。 具有复合多铁层的数据存储单元与电绝缘层相邻。 电绝缘层从通道区域分离数据存储单元。 控制栅电极与数据存储单元相邻。 数据存储单元将控制栅电极的至少一部分与电绝缘层分离。

    PROCESS TO MINIMIZE POLYMORPHISM
    88.
    发明申请
    PROCESS TO MINIMIZE POLYMORPHISM 审中-公开
    最小化多态性的过程

    公开(公告)号：US20090226522A1

    公开(公告)日：2009-09-10

    申请号：US12393584

    申请日：2009-02-26

    申请人： Simon A.M. Howes ,  Rosie McLaughlin ,  Andrew Jordan ,  Wei Tian

    发明人： Simon A.M. Howes ,  Rosie McLaughlin ,  Andrew Jordan ,  Wei Tian

    IPC分类号： A61K9/10 ,  A61K31/551 ,  A61K31/5517

    CPC分类号： A61K31/5517 ,  A61K9/06 ,  A61K9/10 ,  A61K31/551 ,  A61K47/42

    摘要： The commercial formulation of fast dispersing dosage forms (FDDF) requires substantial holding times during which large quantities of pharmaceutically active substance are formed into individual dosage units. During this holding time, pharmaceutical agents with a propensity to polymorphism in an aqueous environment may crystallize into various, and sometimes unpredictable forms. These crystalline forms may affect the efficacy of the pharmaceutical agent. Previous attempts to control this process have included attempts to direct crystallization into a stable form. The instant invention acts to suppress crystallization, by utilizing a combination of standard molecular weight fish gelatin and a low processing temperature, to suppress crystallization to a degree that is not accomplished by either the use of standard molecular weight fish gelatin or low processing temperatures individually.

    摘要翻译： 快速分散剂型（FDDF）的商业制剂需要大量的保持时间，在此期间大量的药物活性物质形成为单独的剂量单位。 在此期间，在水性环境中具有多态性倾向的药剂可能会结晶成各种有时不可预测的形式。 这些结晶形式可能影响药剂的功效。 以前尝试控制该方法的尝试包括将结晶直接导入稳定形式的尝试。 本发明通过利用标准分子量鱼明胶和低加工温度的组合来抑制结晶，以将结晶抑制到不能通过使用标准分子量鱼明胶或单独的低加工温度来实现的程度。

    Coded modulation scheme for a wirelesss communication system and methods thereof
    90.
    发明申请
    Coded modulation scheme for a wirelesss communication system and methods thereof 审中-公开
    一种用于无线通信系统的编码调制方案及其方法

    公开(公告)号：US20050008097A1

    公开(公告)日：2005-01-13

    申请号：US10486887

    申请日：2001-08-17

    申请人： Tjeng Tjhung ,  Hari Garg ,  Wei Tian

    发明人： Tjeng Tjhung ,  Hari Garg ,  Wei Tian

    IPC分类号： H03M13/25 ,  H03M13/27 ,  H03M13/41 ,  H04L1/00 ,  H04L27/12

    CPC分类号： H04L1/0058 ,  H03M13/251 ,  H03M13/256 ,  H03M13/2707 ,  H03M13/41 ,  H04L1/006 ,  H04L1/0071

    摘要： A wireless communication system (10), an encoding method (300) for encoding a binary input signal and a decoding method (800) for decoding a coded baseband signal within the wireless communication system (10) are described. The system (10) has an encoding section (12) and a decoding section (14). The encoding section (12) has a mapper (26) for mapping bits into symbols, and an encoder (28), coupled to the mapper (26), for encoding the symbols to corresponding integers modulo M, where M is an arbitrary predetermined integer. Coded symbols are derived from the corresponding integers. At the decoding section (14), a decoder (40) decodes an output phasor stream of a coded baseband signal to derive an estimate of a codeword. Thereafter, a demapper (42) demaps the estimate of the codeword to derive the bits from decoded symbols.

    摘要翻译： 描述了无线通信系统（10），用于对二进制输入信号进行编码的编码方法（300）和用于对无线通信系统（10）内的编码基带信号进行解码的解码方法（800）。 系统（10）具有编码部分（12）和解码部分（14）。 编码部分（12）具有用于将比特映射成符号的映射器（26）和耦合到映射器（26）的编码器（28），用于将符号编码为模M的相应整数，其中M是任意的预定整数 。 编码符号来自相应的整数。 在解码部分（14），解码器（40）对编码的基带信号的输出相量流进行解码以导出码字的估计。 此后，解映射器（42）将码字的估计解映射以从解码的符号导出比特。