公开(公告)号：US09448184B1

公开(公告)日：2016-09-20

申请号：US14180923

申请日：2014-02-14

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/00 ,  G01J4/00 ,  G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

公开(公告)号：US09347890B2

公开(公告)日：2016-05-24

申请号：US14273424

申请日：2014-05-08

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Chuang ,  John Fielden

IPC: G01N21/88 ,  G01N21/95 ,  G01N21/956 ,  H01L31/02

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/14636 ,  H01L31/02 ,  H04N5/3577 ,  H04N5/3765

Abstract: A method of inspecting a sample at high speed includes directing and focusing radiation onto a sample, and receiving radiation from the sample and directing received radiation to an image sensor. Notably, the method includes driving the image sensor with predetermined signals. The predetermined signals minimize a settling time of an output signal of the image sensor. The predetermined signals are controlled by a phase accumulator, which is used to select look-up values. The driving can further include loading an initial phase value, selecting most significant bits of the phase accumulator, and converting the look-up values to an analog signal. In one embodiment, for each cycle of a phase clock, a phase increment can be added to the phase accumulator. The driving can be performed by a custom waveform generator.

Abstract translation: 高速检查样品的方法包括将辐射引导和聚焦到样品上，并且接收来自样品的辐射并将接收的辐射引导到图像传感器。 值得注意的是，该方法包括以预定信号驱动图像传感器。 预定信号最小化图像传感器的输出信号的建立时间。 预定信号由相位累加器控制，该相位累加器用于选择查找值。 驱动还可以包括加载初始相位值，选择相位累加器的最高有效位，以及将查找值转换为模拟信号。 在一个实施例中，对于相位时钟的每个周期，相位增量可以被加到相位累加器。 驱动可由自定义波形发生器执行。

公开(公告)号：US20160094011A1

公开(公告)日：2016-03-31

申请号：US14859122

申请日：2015-09-18

Applicant: KLA-Tencor Corporation

Inventor： Yujun Deng ,  J. Joseph Armstrong ,  Yung-Ho Alex Chuang ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/137 ,  G01J1/44 ,  G01J1/04 ,  H01S3/16 ,  H01S3/00

CPC classification number: H01S3/137 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/44 ,  G01J2001/4238 ,  G02F1/37 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0092 ,  H01S3/1611 ,  H01S3/1643 ,  H01S3/1671 ,  H01S2301/08

Abstract: A pulsed UV laser assembly includes a partial reflector or beam splitter that divides each fundamental pulse into two sub-pulses and directs one sub-pulse to one end of a Bragg grating and the other pulse to the other end of the Bragg grating (or another Bragg grating) such that both sub-pulses are stretched and receive opposing (positive and negative) frequency chirps. The two stretched sub-pulses are combined to generate sum frequency light having a narrower bandwidth than could be obtained by second-harmonic generation directly from the fundamental. UV wavelengths may be generated directly from the sum frequency light or from a harmonic conversion scheme incorporating the sum frequency light. The UV laser may further incorporate other bandwidth reducing schemes. The pulsed UV laser may be used in an inspection or metrology system.

Abstract translation: 脉冲UV激光器组件包括部分反射器或分束器，其将每个基本脉冲分成两个子脉冲，并将一个子脉冲引导到布拉格光栅的一端，将另一个脉冲引导到布拉格光栅的另一端（或另一个 布拉格光栅），使得两个子脉冲都被拉伸并接收相对（正和负）频率的线性调频脉冲。 两个延伸的子脉冲被组合以产生具有比通过直接从基波的二次谐波产生可以获得的窄带宽的和频光。 紫外波长可以直接从和频光或从包含和频光的谐波转换方案中产生。 UV激光器可以进一步并入其他带宽减小方案。 脉冲UV激光可用于检测或计量系统。

公开(公告)号：US20160064184A1

公开(公告)日：2016-03-03

申请号：US14834991

申请日：2015-08-25

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/20 ,  H01J37/285

CPC classification number: G01N30/72 ,  G01T1/24 ,  G06F19/00 ,  H01J37/244 ,  H01J37/28 ,  H01J49/02 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01L27/1464 ,  H01L27/14659 ,  H01L27/14661 ,  H01L31/00

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such an unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract translation: 扫描电子显微镜结合了多像素固态电子检测器。 多像素固体检测器可以检测反向散射和/或二次电子。 多像素固态检测器可以并入模数转换器和其他电路。 多像素固态检测器可以能够近似地确定入射电子的能量和/或可以包含用于处理或分析电子信号的电路。 多像素固态检测器适用于高速操作，例如以大约100MHz或更高的速度。 扫描电子显微镜可以用于检查，检查或测量诸如未图案化的半导体晶片，图案化半导体晶片，掩模版或光掩模的样品。 还描述了检查或检查样品的方法。

公开(公告)号：US20150268176A1

公开(公告)日：2015-09-24

申请号：US14300227

申请日：2014-06-09

Applicant: KLA-Tencor Corporation

Inventor： Yujun Deng ,  Yung-Ho Chuang ,  John Fielden

IPC: G01N21/95 ,  H01S3/00

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G02F1/3534 ,  G02F1/39 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/094015

Abstract: A DUV laser includes an optical bandwidth filtering device, such as etalon, which is disposed outside of the laser oscillator cavity of the fundamental laser, and which directs one range of wavelengths into one portion of a frequency conversion chain and another range of wavelengths into another portion of the frequency conversion train, thereby reducing the bandwidth of the DUV laser output while maintaining high conversion efficiency in the frequency conversion chain.

Abstract translation: DUV激光器包括诸如标准具的光学带宽滤波器件，其被设置在基本激光器的激光振荡器腔的外部，并且将一个波长范围引导到变频链的一部分，将另一个波长范围引导到另一个 部分频率转换列，从而降低DUV激光输出的带宽，同时保持变频链中的高转换效率。

公开(公告)号：US20150200216A1

公开(公告)日：2015-07-16

申请号：US14591325

申请日：2015-01-07

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

Abstract translation: 用于短波长光的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 在纯硼层的顶部形成防反射层或保护层。 该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。 图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。

公开(公告)号：US20150022805A1

公开(公告)日：2015-01-22

申请号：US14507758

申请日：2014-10-06

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  John Fielden

IPC: G01N21/88 ,  G01N21/94

CPC classification number: H01S5/0092 ,  C03B33/02 ,  C30B1/02 ,  C30B29/10 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G01N21/88 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0637 ,  G01N2201/068 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2001/3505 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2202/20 ,  H01S3/0092 ,  H01S3/10 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/11

Abstract: An optical system for detecting contaminants and defects on a test surface includes an improved laser system for generating a laser beam and optics directing the laser beam along a path onto the test surface, and producing an illuminated spot thereon. A detector and ellipsoidal mirrored surface are also provided with an axis of symmetry about a line perpendicular to the test surface. In one embodiment, an optical system for detecting anomalies of a sample includes the improved laser system for generating first and second beams, first optics for directing the first beam of radiation onto a first spot on the sample, second optics for directing the second beam onto a second spot on the sample, with the first and second paths at different angles of incidence to the sample surface. In another embodiment, a surface inspection apparatus includes an illumination system configured to focus beams at non-normal incidence angles.

Abstract translation: 用于检测测试表面上的污染物和缺陷的光学系统包括用于产生激光束的改进的激光系统和将激光束沿着路径引导到测试表面上并在其上产生照明点的光学系统。 检测器和椭圆形镜面也具有围绕垂直于测试表面的线的对称轴。 在一个实施例中，用于检测样本异常的光学系统包括用于产生第一和第二光束的改进的激光系统，用于将第一辐射束引导到样品上的第一光点上的第一光学器件，用于将第二光束引导到 样品上的第二个点，第一和第二个路径与样品表面的入射角不同。 在另一个实施例中，表面检查装置包括被配置为以非正常入射角聚焦光束的照明系统。

公开(公告)号：US20140226140A1

公开(公告)日：2014-08-14

申请号：US14170384

申请日：2014-01-31

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Yujun Deng ,  Justin Dianhuan Liou ,  Vladimir Dribinski ,  John Fielden

IPC: G02B17/08 ,  G01N21/88 ,  H01S3/109

CPC classification number: H01S3/302 ,  G01N21/9501 ,  G02B17/0892 ,  G02F1/353 ,  G02F1/395 ,  G02F2001/354 ,  H01S3/005 ,  H01S3/0092 ,  H01S3/067 ,  H01S3/06754 ,  H01S3/10053 ,  H01S3/11 ,  H01S3/16 ,  H01S3/1643 ,  H01S3/1666 ,  H01S3/23 ,  H01S3/2308

Abstract: An improved solid-state laser for generating sub-200 nm light is described. This laser uses a fundamental wavelength between about 1030 nm and 1065 nm to generate the sub-200 nm light. The final frequency conversion stage of the laser creates the sub-200 nm light by mixing a wavelength of approximately 1109 nm with a wavelength of approximately 234 nm. By proper selection of non-linear media, such mixing can be achieved by nearly non-critical phase matching. This mixing results in high conversion efficiency, good stability, and high reliability.

Abstract translation: 描述了用于产生亚200nm光的改进的固态激光器。 该激光器使用约1030nm和1065nm之间的基本波长来产生亚200nm的光。 激光的最终变频阶段通过将约1109nm的波长与约234nm的波长混合而产生亚200nm的光。 通过适当选择非线性介质，可以通过几乎非关键的相位匹配来实现这种混合。 这种混合导致高转换效率，良好的稳定性和高可靠性。

公开(公告)号：US20140034816A1

公开(公告)日：2014-02-06

申请号：US13947975

申请日：2013-07-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden

IPC: H01J29/38

CPC classification number: H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

Abstract translation: 在具有相对的照明​​（顶部）和输出（底部）表面的单晶硅衬底上形成光电阴极。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄（例如，1-5nm）的硼层直接设置在输出表面上，然后在硼层上形成低功函数材料层 以增强光电子的发射。 低功函材料包括碱金属（例如铯）或碱金属氧化物。 在照明（顶部）表面上形成可选的第二硼层，并且在硼层上形成可选的抗反射材料层，以增强光子进入硅衬底的能力。 在相对的照明​​（顶部）和输出（底部）表面之间产生可选的外部电位。 光电阴极形成新型传感器和检测系统的一部分。

公开(公告)号：US20130215420A1

公开(公告)日：2013-08-22

申请号：US13734506

申请日：2013-01-04

Applicant: KLA-TENCOR CORPORATION

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。