公开(公告)号：US20180070040A1

公开(公告)日：2018-03-08

申请号：US15806913

申请日：2017-11-08

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

IPC: H04N5/3722

CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

公开(公告)号：US20160315114A1

公开(公告)日：2016-10-27

申请号：US15201028

申请日：2016-07-01

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: H01L27/146 ,  H01L31/107 ,  G01N21/88 ,  H01L27/148 ,  G01N21/95

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

公开(公告)号：US09410901B2

公开(公告)日：2016-08-09

申请号：US14643148

申请日：2015-03-10

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden

IPC: H01L25/00 ,  G01N21/95 ,  G01N21/88 ,  H01L27/146 ,  H01L27/148 ,  H01L31/107 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L27/14632 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2201/061 ,  G01N2201/0638 ,  G01N2201/12 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14681 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L27/14825 ,  H01L27/14831 ,  H01L27/14856 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract translation: 高灵敏度图像传感器包括硅的外延层，其是固有的或轻掺杂的（例如掺杂水平小于约1013cm-3）。 CMOS或CCD电路制造在外延层的前侧。 外延p和n型层生长在外延层的背面。 在n型外延层上沉积纯硼层。 在硼沉积过程中，一些硼从背面被驱动到几nm的n型外延层中。 可以将抗反射涂层施加到纯硼层。 在传感器的操作期间，将数十至几百伏的负偏压施加到硼层，以加速光电子远离背面，并通过雪崩效应产生额外的电子。 接地的p阱可以根据需要从反向偏置的外延层保护有源电路。

公开(公告)号：US20190253652A1

公开(公告)日：2019-08-15

申请号：US16397072

申请日：2019-04-29

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H04N5/378 ,  G01N21/956 ,  H04N5/361 ,  H04N5/372 ,  G06T7/00 ,  H01L27/148 ,  G01N21/95

Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

公开(公告)号：US10313622B2

公开(公告)日：2019-06-04

申请号：US15337604

申请日：2016-10-28

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  Sharon Zamek ,  John Fielden ,  Devis Contarato ,  David L. Brown

IPC: H04N5/378 ,  G01N21/95 ,  G06T7/00 ,  H01L27/148 ,  H04N5/372 ,  H04N5/361

Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

公开(公告)号：US20170329025A1

公开(公告)日：2017-11-16

申请号：US15667500

申请日：2017-08-02

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: G01T1/24 ,  H01J37/244 ,  H01J37/28 ,  H01L31/00

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

公开(公告)号：US20160064184A1

公开(公告)日：2016-03-03

申请号：US14834991

申请日：2015-08-25

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/20 ,  H01J37/285

CPC classification number: G01N30/72 ,  G01T1/24 ,  G06F19/00 ,  H01J37/244 ,  H01J37/28 ,  H01J49/02 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01L27/1464 ,  H01L27/14659 ,  H01L27/14661 ,  H01L31/00

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such an unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

Abstract translation: 扫描电子显微镜结合了多像素固态电子检测器。 多像素固体检测器可以检测反向散射和/或二次电子。 多像素固态检测器可以并入模数转换器和其他电路。 多像素固态检测器可以能够近似地确定入射电子的能量和/或可以包含用于处理或分析电子信号的电路。 多像素固态检测器适用于高速操作，例如以大约100MHz或更高的速度。 扫描电子显微镜可以用于检查，检查或测量诸如未图案化的半导体晶片，图案化半导体晶片，掩模版或光掩模的样品。 还描述了检查或检查样品的方法。

公开(公告)号：US11114489B2

公开(公告)日：2021-09-07

申请号：US16421212

申请日：2019-05-23

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Yung-Ho Alex Chuang ,  Jingjing Zhang ,  John Fielden ,  David L. Brown ,  Masaharu Muramatsu ,  Yasuhito Yoneta ,  Shinya Otsuka

IPC: H01L27/146

Abstract: An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US10466212B2

公开(公告)日：2019-11-05

申请号：US15667500

申请日：2017-08-02

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  G01N30/72 ,  H01J37/28 ,  H01L31/00 ,  G01T1/24 ,  G06F19/00 ,  H01J49/02 ,  H01L27/146

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

公开(公告)号：US09767986B2

公开(公告)日：2017-09-19

申请号：US14834991

申请日：2015-08-25

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  H01J37/28 ,  H01L31/00 ,  G01T1/24

CPC classification number: G01N30/72 ,  G01T1/24 ,  G06F19/00 ,  H01J37/244 ,  H01J37/28 ,  H01J49/02 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01L27/1464 ,  H01L27/14659 ,  H01L27/14661 ,  H01L31/00

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.