摘要:
A detector for determining the location of a pulsed laser spot reflected from a scene, which comprises a CCD sensor for imaging the scene comprising an array of pixels arranged in rows (R1, R2, R3) and columns (C1, C2, C3), a serial read-out register arrangement (not shown), and charge transfer electrodes (Ø1H, Ø1V, Ø2) capable of transferring signal charge in at least two adjacent pixels to read-out register arrangement locations representative of the row location of at least one of the adjacent pixels and the column location of at least one other of the adjacent pixels. The charge transfer electrodes are two phase, but three or more phase arrangements are also possible.
摘要:
A solid-state imaging device 1A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns, N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the imaging plane 12, and N signal readout circuits 30 arranged on the other end side in the column direction for each of the columns with respect to the imaging plane 12, a semiconductor element 50 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 20 for each of the columns, and a semiconductor element 60 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 30 for each of the columns.
摘要:
A solid-state imaging device 1A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns, N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the imaging plane 12, and N signal readout circuits 30 arranged on the other end side in the column direction for each of the columns with respect to the imaging plane 12, a semiconductor element 50 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 20 for each of the columns, and a semiconductor element 60 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 30 for each of the columns.
摘要:
A CCD image sensor comprises photosensitive elements arranged in rows and columns, vertical CCDs each having vertical shift elements associated with respective ones of the photosensitive elements of a corresponding one of the columns, and a horizontal CCD comprising horizontal shift elements. The image sensor further comprises a transition region arranged between the vertical CCDs and the horizontal CCD. The transition region is configured to separate each of a plurality of signal channels provided by respective ones of the vertical CCDs into first and second parallel signal channels and to controllably direct selected ones of the parallel signal channels to the horizontal shift elements of the horizontal CCD in accordance with a designated readout sequence.
摘要:
A method for transferring charge from a photo sensing region to a charge-coupled device in an image sensor, the method comprises the steps of providing a plurality of pixels including a photo sensing region for collecting photo-generated charge and a charge-coupled device region between which is a transfer region; providing a barrier in the charge-coupled device for causing the transfer of the charge through the charge-coupled device; and providing the transfer region having a lower barrier than the charge-coupled device so that excess charge in the charge-coupled device flows into the photo sensing region.
摘要:
A solid-state image sensing device comprising a photoelectric converter portion, a solid-state image sensor, and a controlling means. The photoelectric converter portion has a plurality of photoelectric converters arranged in two dimensions on a semiconductor substrate. The solid-state image sensor vertically transfers charges, transferred from the photoelectric converter portion, at separate times of first transfer and second transfer. Further, the photoelectric converter portion has a vertical transfer portion, in which first and fourth gates are provided for odd-numbered photoelectric converters, and second and third gates are provided for even-numbered photoelectric converters, and a horizontal transfer portion for horizontally transferring charges transferred from the vertical transfer portion. The controlling means supplies the vertical transfer portion with vertical transfer pulses and the horizontal transfer portion with horizontal transfer pulses. The controlling means transfers charges from the photoelectric converter portion to the vertical transfer portion such that the charges of odd-numbered pixels and the charges of even-numbered pixels are each transferred in a lump, respectively.
摘要:
A fast frame interline transfer charge coupled device imaging sensor includes an imaging section and an storage section. The imaging section includes a plurality of interline transfer registers, each interline transfer register containing a plurality of interline register elements. The imaging section further includes an interline clocking structure, the interline clocking structure including polycrystalline silicon buss lines used as gate electrodes, the polycrystalline silicon buss lines being connected to a metal strapping network, the interline clocking structure causing charge to be transferred between interline register elements of each interline transfer register based on interline clocking signals. The storage section is coupled to the imaging section. The storage section includes a plurality of storage registers, each storage register containing a plurality of storage register elements. The storage section further includes a storage discharge structure and a storage clocking structure. Each storage register element of the storage registers is selectively coupleable through the storage discharge structure to a storage drain. The storage clocking structure has first and second clocking structure parts, the first clocking structure part corresponding to first storage register elements coupled to respective interline registers. The first clocking structure part is coupled to the interline clocking structure so as to cause charge to be transferred from the respective interline registers to the first storage register elements based on the interline clocking signals. The second clocking structure part causes charge to be transferred between storage register elements of each storage register based on frame clocking signals.
摘要:
An image pick up device has a plurality of rows of light receiving cells, a plurality of vertical transfer registers each located adjacent to respective one row of light receiving cells and a control circuit for controlling said light receiving cells and the vertical transfer registers. The control circuit makes the light receiving cells and the vertical transfer registers carry out a short exposure operation and a long exposure operation continuously, and then reads out both signals sequentially or in parallel to synthesise an expanded dynamic range signal.
摘要:
There is disclosed a solid-state image pick-up apparatus provide with a solid-state image sensor such as a CCD image sensor, etc. This solid-state image pick-up apparatus comprises; a solid-state image sensor comprised of a plurality of photosensitive elements arranged in a form of a matrix having rows and columns, and responsive to a light incident thereonto to accumulate electric charges; a plurality of vertical shift registers coupled to the respective columns of the matrix of the photosensitive elements, and adapted for receiving electric charges from the photosensitive elements in response to a sensor gate signal; a storage section coupled to the vertical shift registers, and adapted for receiving electric charges from the vertical shift registers in response to a first transfer signal; a horizontal shift register coupled to the storage means, and adapted for receiving electric charges from the storage means in response to a second transfer signal for outputting, column by column, electric charges from the solid-state image sensor; and a timing signal generator for sweeping out independently ineffective electric charges accumulated in the photosensitive elements of the odd rows and those accumulated in the photosensitive elements of the even rows so that the accumulating period of effective electric charges is adjustably varied in a range from one field period to one frame period.
摘要:
Disclosed herein is an image sensing apparatus using a charge-coupled device of a frame interline-transfer system (FIT-CCD). The image sensing apparatus basically comprises the charge-coupled device, a sample/hold circuit, a signal processing circuit, a recording circuit, a driver circuit for setting a light-detecting unit in operation, a driver circuit for setting a storage unit in operation, a driver circuit for setting a horizontal charge transfer path in operation, a timing pulse generating circuit, an electronic shutter control circuit, a substrate voltage drive circuit, an overflow drain voltage circuit and an adding circuit. According to the above construction of the image sensing apparatus, any smear can greatly be reduced. It is therefore possible to greatly reduce flicker and to obtain a pseudo frame image superior in quality.